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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
1N5819aContextual Info: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal, |
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1N5817/D 1N5817 1N5818 1N5819 1N5819are 1N5819a |