1N66 Search Results

6052S

Abstract: 1N661
Contextual Info: TYPES 1N659, 1N660. 1N661 SILICON SW ITCHING DIODES B U LLETIN NO. DL-S 739782, M AR C H 19 6 7 - R E V IS E D M AR C H 1973 M EDIUM-SPEED SWITCHING DIO DES • Rugged Double-Plug Construction m echanical d a ta D o u b le -p lu g c o n s tru c tio n a ffo rd s inte gral p o s itiv e c o n ta c t b y m eans o f a th e rm a l c o m p re s sio n b o n d . M o istu re -fre e

HSL2-1808

Abstract: BAY6642
Contextual Info: BAY6642 HiRel Silicon Switching Diode Target datasheet • For high-speed switching applications  Covers 1N6639 – 1N6643 Type Marking BAY6642 - Pin Configuration 1 Anode 2 Cathode Package HSL2-1808 Maximum Ratings at TA=25°C; unless otherwise specified

1N6642UB

Contextual Info: Silicon Switching Diode Series 1N6642UB Features • JAN, JANTX, JANTXV and JANS qualification is available per MIL-PRF-19500/578. See part nomenclature for all available options. • Surface mount equivalent of popular JEDEC registered 1N6642 number. •

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.

1N6629

Abstract: 1N6631 1N6626 1N6626US 1N6628 1N6631US SP6629 marking 5 melf -diode glass 1N6629 JANTX Microsemi micronote series 050
Contextual Info: 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be

1N6627U

Abstract: 1N6626 1N6626US 1N6628US 1N6629US 1N6631 1N6631US Microsemi micronote series 050
Contextual Info: 1N6626US thru 1N6631US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be

L02A20

Abstract: 1N6677UR 1N6677UR-1 2A20 2A30 5A30 CDLL6675 CDLL6676 CDLL6677
Contextual Info: • 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED •LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION 1N6677UR-1 and CDLL6675 thru CDLL6677

1N6666

Abstract: 1N6664 1N6664R 1N6665 1N6665R 1N6666R
Contextual Info: 1N6664 1N6665 1N6666 1N6664R 1N6665R 1N6666R 12 Amp Ultra Fast Recovery. Low Reverse Leakage Dual Rectifiers in Hermetic Isolated TO-257AA Packages D ES C R IP TIO N FEA TU RES T he se high e fficien cy rectifiers are designe d for use in sw itch ing pow er supplies, fre e w h eeling diodes

1N6642

Abstract: LE17 MIL-PRF19500 QR217 l2d diode
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

1N6626

Abstract: 1N6626US 1N6628 1N6629 1N6631 1N6631US
Contextual Info: 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be

1N4954

Abstract: 1N4955 1N5968 1N5969 1N6632 1N6633 1N6634 1N6635 1N6636 1N6637
Contextual Info: 1N4954 thru 1N4996, 1N5968 thru 1N5969, and 1N6632 thru 1N6637 Microsemi Corp. rtie öi ode experts SANTA A N A . CA Por more information call: 714 979-8220 FEATURES M A X IM U M R A T IN G S O perating Temperature: - 65°C to + 175°C • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE Storage Temperature: - 65°C to + 200°C

1N6639

Abstract: 1N6638 melf diode D-5D 1N6641
Contextual Info: 1N6638/U 1N6639/U 1N6640/U 1N6641/U 1N6642/U 1N6643/U SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. A SIGNAL OR COMPUTER DIODE 1N6638 THRU 1N6643 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Upscreen to JANTX, JANTXV per MIL-PRF-19500/578,609 available

SS664

Contextual Info: SS6638/U SS6639/U SS6640/U SS6641/U SS6642/U SS6643/U SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4973, REV. A SIGNAL OR COMPUTER DIODE 1N6638 THRU 1N6643 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Manufacture & screen to JANS per MIL-PRF-19500/578,609 using Sensitron specification, 7700-409X

BA219

Abstract: FDH444 15921 1N628 DO-35 1S920 1N842 1N3070 1N629 1N643
Contextual Info: FAIRCHILD DIODES D IO D ES HIGH VOLTAGE SWITCHING DIODES BY DESCENDING BV GLASS PACKAGE DEVICE NO. BV V Min nA Max 1 1N661 240 10000 200 1.0 6.0 2 FDH400 200 100 150 1.0 200 Item ir VF V Max vr @ V @ If mA C pF Max 20 «rr ns Max Package No. 300 DO-35 50

1N6657

Abstract: 1N6657R
Contextual Info: 1N6657 1N6657R SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 209, REV A HERMETIC ULTRAFAST RECOVERY RECTIFIER DESCRIPTION: 100 VOLT, 40 AMP, 35 NANOSECOND, HERMETIC RECTIFIER IN A TO-254 PACKAGE. MAX RATINGS/ELECTRICAL CHARACTERISTICS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED.

mil-PRF-19500/610

Abstract: 1N6677UR-1 CDLL6677 DO-213AA 2A20 2A30 CDLL6675 CDLL6676
Contextual Info: • 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/610 • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED •LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N6677UR-1 and

DSAIH0002550

Contextual Info: Square ended SMD Fvv Silicon switching diodes 1N6638US 1N6642US 1N6643US Applications High Rel. Voidless MELF "D" General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power types like 1N4148UR-1 and 1N4150UR-1.

ite 9944

Abstract: 9945 A
Contextual Info: Microsemi Ultra Fast Rectifiers Part Number 1N6623U 1N6623 1N6623U 1N6623 1N6623U 1N6624 1N6624U 1N6624 1N6624U 1N6624 1N6624U 1N6625 1N6625U 1N6625 1N6625U 1N6625 1N6625U MB200 MB207 SF21 MB201

1n66

Contextual Info: MicrosemiCorp. 1N6626US thru 1IM6631US ? Santa Ana 2830 S. Fairview Street, Santa Ana, CA 92704 714 979-8220 • (714) 557-5989 Fax Features A X IA L AND SURFACE M OUNT CONFIGURATIONS HIGH VO LTA G E WITH ULTRA FAST RECO VERY TIME V E R Y LOW SW ITCHING LOSS A T HIGH TEM PERATURE

Contextual Info: 400 V - 1,000 V Rectifiers 1N6616 1N6617 1N6618 1N6619 3.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current Reverse Current @ Vrwm

1N6618

Abstract: 1N6616 1N6617 1N6619
Contextual Info: 1N6616 1N6617 1N6618 1N6619 400 V - 1,000 V Rectifiers 3.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 3 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current Reverse Current

10 amp diode rectifiers

Abstract: 1N6657R
Contextual Info: Part Number Search: Power Rectifiers Product Specifications Product Group: Power Rectifiers, Ultra Fast Rectifier less than 100ns View Parametric Table Type Number PIV (Volts) 1N6657R 100 Io TC=55° Io C TC=100°C (Amps) (Amps) 40 Ir @PIV 25°C (uAmps) 10

Contextual Info: 1N664 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.2 @I(Z) (A) (Test Condition)10m Tolerance (%)5 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k5.0 Maximum Operating Temp (øC)200þ Package StyleAxial-8

microsemi 1n6642

Abstract: 1N6638 JANTX 1N6638 1N6642 JANTXV 1N4148-1 JANS jantx diodes 1115-13
Contextual Info: 1N6638, 1N6642, 1N6643 Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 DESCRIPTION These popular JEDEC registered switching/signal diodes are military qualified and available