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yg 2822

Abstract: RAS 0510 cs8221 neat Waukesha 6670 82C631 82c211 2021G 82C206 CHIPset for 80286 REG62
Contextual Info: PRELIM INARY C S 8221 NEW ENHANCED AT NEAT DATA BOOK 8 2 C 2 1 1 / 8 2 C 2 1 2 / 8 2 C 2 1 5 / 8 2 C 2 0 6 (IPC ) CHIPSet™ 100% IBM™ PC/AT Compatible New En­ hanced CHIPSet™ for 12MHz to 16MHz systems Supports 16MHz 80286 operation with only 0.5-0.7 wait states for 100ns DRAMs and 12

driver IC for IRF540 MOSFET

Abstract: IRF540 mosfet MOSFET IRF540 mosfet overcurrent pin configuration irf540 power MOSFET IRF540 PWM speed control of DC motor using IRF540 12v incandescent lamp driver PWM dc speed control of DC motor using IRF540 12v dc driver motor control mosfet
Contextual Info: MIC5021 High-Speed High-Side MOSFET Driver General Description Features 12V to 36V operation 550ns rise/fall time driving 2000pF TTL compatible input with internal pull-down resistor Overcurrent limit Gate to source protection Internal charge pump 100kHz operation guaranteed over full temperature and

Contextual Info: ITEM <3> PART NUMBER BODY I3 3 -3 4 D Z -0 0 1 BRASS GOLD PL .00001 MIN OVER NICKEL PL .DDaaS MIN OVER COPPER PL .0 0 0 0 5 MIN l^ - 3 4 D Z - 0 0 6 BRASS NICKEL PL .DDG1 MIN OVER COPPER PL .0 0 0 0 5 MIN ITEM <|> CONTACT BRASS GOLD PL .0 0 0 0 3 MIN OVER

Contextual Info: W D EEH4164MEV-RP 4Megx16 EDODRAM I ELECTRONIC. DESIGNS, INC 4 Mepbit x 16 Dynamic RAM 33 V, ExtendedData Out Features EDI's ruggedized plastic 4Mx16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic Random Access Memory

MPSa14 equivalent

Abstract: mpsa13 equivalent mpsa14 MPSa13 equivalent MPS-A13 PSA13
Contextual Info: TOSHIBA DARLINGTON TRANSISTOR M PSA13,14 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS. FEATURE: High DC Current Gain @ Ic=100mA MPSA13 hFE=10,000 Min. MPSA14 hFE=20,000 Min. 1. EMITTER 2. BASE a COLLECTOR

Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS826B - SEPTEMBER 1996 - REVISED OCTOBER 1987 * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • f • • Organization 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture

i335

Contextual Info: ITEM <3> PART NUMBER BODY I33-54DZ-001 BRASS GOLD P L .00001 MIN OVER NICKEL PL .DDaaS MIN OVER COPPER PL .0 00 05 MIN 131- 5402-006 BRASS NICKEL PL .DDG1 MIN OVER COPPER PL .0 0 0 0 5 MIN ITEM <£> CONTACT BERYLLIUM COPPER GOLD PL .0 0 0 0 3 MIN OVER NICKEL PL .0 00 05 MIN OVER

ntc 2322 642 6

Abstract: thermistor 2322 642 2322 642 thermistor NTC 2322 642 1 r25 q 2322 642 12
Contextual Info: 2322 640 7 . 2322 642 1 . ASSEMBLY RANGE NTC THERMISTORS screw range TE M P E R A TU R E SENSING A N D CO NTRO L Features o o Easy mounting Rugged construction Q U IC K REFERENCE D A T A 640 7. 642 7. Therm al tim e constant approx. see note 1

MH1SS1

Abstract: MHB4011 MH5400S Katalog tesla diod C520D A244D MAC198 MA3006 KF520 B260D
Contextual Info: Prehled diskrétních polovodicovÿch soucástek a dalsích dovâzenÿch typú z nèkdej si RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOCLENY a dalsí prvky . spolu s náhradami . a nej pouzívanéj sí standardní zahranicní soucástky

Contextual Info: HG, HC-Rectrfler Blocks High Voltage, Mounting Slots HVCA NuMber Repetitive Peak Reverse Voltage Vw P llU g V Volts Avg. Forward Current Max lM H 55 C A (Amp*) M ix. Forward Max. Reverse VottageDrop Current VF<& lFPerLeg i H (a 2^C V(VoH*) »A(micmAmpe) Max. Surge

ACCM 5 pin

Contextual Info: ADE-203-304 C (Z) HM5216805 Series HM5216405 Series 1048576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2097152-word x 4-bit x 2-bank Synchronous Dynamic RAM Prelim inary HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,

Contextual Info: EDI444097Ç-RP W 4Megx4Fast Page DRAM Ruggedized Plastic D I ELECTRONIC. DESIGNS, INC 4 Megabitx 4 Dynamic RAM 5V, Fast Pays Features EDI's ruggedzed plastic 4Mx4 DRAM allows the user to capitalize on the cost advantage of using a plastic compo- 4 Meg x 4 bit CMOS Dynamic

Contextual Info: b3E • bS4TäB7 0 0 1 5 3 3 t. T b S ■ n i T 3 MITSUBISHI DGT L M IT S U B IS H I BIPOLAR DIGITAL ICs M LOGIC 54956 P P LL FREQUENCY SYNTHESIZER FOR PERSONAL RADIOS DESCRIPTION The M 54956P is a single-chip semiconductor integrated circuit consisting of a PLL frequency synthesizer for per­

2M2222A

Abstract: pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523
Contextual Info: W tipt H E W L E T T mL'HM P AC KAR D HP 1000 M/E/F-Series Computers Engineering and Reference Documentation HEWLETT-PACKARD COMPANY Data Systems Division 11000 Wolfe Road Cupertino, California 95014 MANUAL PART NO. 92851-90001 Printed in U.S.A. March 1981

Contextual Info: OSM SMA m u 4tnlght CM Plug without Cortod 2001M m Stdgtt C M flu* 4 JM Softr AtBhnwit 2001 ?^?. ?WHi ?0ffi 2032, 2QWSrti StnW CM Pliv 1 Judd SoUv Ckmg Atflohmit ao i.2002. 20M .au M m Stntft emu Plugi1JM UBTV WUIIMR 2001, 2002, 2004, 20U M m smetCMPkm&JuM

Contextual Info: TC58F10OOP/F/J-15 TC58F1000P/F/J-20 T C 5 8 F 1 0 0 0 P /F /J 131,072W ORD X 8BIT C M O S FLASH E2 P R O M D ESC RIP TIO N The TC58F1000P / F / J is a 1,048,576 bits, Flash Electrically Erasable and Programmable Read Only Memory FE2PROM organized as 131,072 words by 8 bits. The TC58F1000P / F / J is fabricated

Contextual Info: AM Dn Am29F800B 8 Megabit 1 M x 8-BK/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements

ZR25D01

Contextual Info: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a pre cisio n m icro p o w e r voltage reference o f 2.5 volts. The device is available in a sm all outline SOT23 surface m ount

10 35L CAP

Abstract: 10 35L CAPacitor ELNA Electrolytic capacitor SILMIC II elna silmic elna capacitor SILMIC II CAP 10 35L 10 35L cd 10 35L T5 ELNA FOR AUDIO elna capacitor SILMIC
Contextual Info: LOS Aluminum Electrolytic Capacitors For Audio • SILMIC SERIES • Elna’s new ly developed low distortion m aterial constructed with silk fiber is used for the internal separator. It produces superior result in sound quality for audio applications.

Contextual Info: SIE D • [,24^025 DOl SSbG 5 ■ MITSUBISHI LSIs M5M44258AP, J,L-8,-10,-12 M I T S U B I S H I MEMORY/ ASI C STATIC COLUMN MODE 1 0 4 8 5 7 6 -B IT (2 6 2 1 4 4 -W 0 R D BY 4-BIT)DYNA M IC RAM T-45-23-17 D ESC RIPTIO N This is a family o f 262144-word by 4-bit dynamic RAMs,