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Abstract: No abstract text available
Text: h a r ^ IRFD220, IRFD221, IRFD222, IRFD223 s s e m i c o n d u c t o r 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFD220,
IRFD221,
IRFD222,
IRFD223
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IRFD221
Abstract: 3203 MOSFET
Text: MOTOROLA SC ÍXSTRS/R F} Tfl 6367254, M O T O R O L A SC XSTRS/R F öF|fc,3t7aSL( 0003202 ; . 980 63282 D IRFD220-223 T ' 3 5 ~S lS ELECTRICAL CHARACTERISTICS — C o n tin u e d (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Typ Max U nit
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IRFD220-223
IRFD220,
IRFD221
IRFF110
IRFF113
IRFF113
3203 MOSFET
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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C144 e s j
Abstract: 1RFD220 k 3525 MOSFET 1RFD223 nds 40 d223v MOSFET C144
Text: H E D | INTERNATI ONAL 4055452 □QQä3ci 2 5 | T-35-25 Data Sheet No. PD-9.417C RECTIFIER INTERNATIONAL RECTIFIER I « R HEXFET TRANSISTORS I R F D 2 S Q IRFD223 IM-CHAIMIMEL H E X O IP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE 200 Volt, 0.8 Ohm, 1-Watt HEXDIP
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T-35-25
IRFD223
G-145
1RFD220,
1RFD223
T-35-25
C-146
C144 e s j
1RFD220
k 3525 MOSFET
nds 40
d223v
MOSFET C144
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IRFD220
Abstract: 1RFD220 IRF022 IRFD221 IRFD222 IRFD223 F14E diode. f-14e
Text: MOTOROLA SC X S T R S /R F IM E D I b3b?aS4 G G Ö ci ? 2 3 fl | MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA IR F D 2 2 0 IRFD221 IR F D 2 2 2 IR F D 2 2 3 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n sisto rs N -Ch ann el Enh an cem en t-M ode
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IRFD220
IRFD221
IRFD222
IRFD223
PERY145M,
1RFD220
IRF022
IRFD223
F14E
diode. f-14e
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S19110DJ
Abstract: S19110D S19110 SI9110AK D469 CMOS SI9111DY
Text: SÏ9110/9111 Siliconix incorporated Switchmode Controllers FEATURES APPLICATIONS • 10 to 120 V Input Range • DC/DC Converters • Current-mode Control • Distributed Power Systems • High-Speed, Source-Sink Output Drive • ISDN Equipment • High Efficiency Operation
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Si9110
Si9110/9111
120-VDC)
2N7004,
2N7005,
IRFD120
1RFD220.
SMM20N50
S19110DJ
S19110D
S19110
SI9110AK
D469 CMOS
SI9111DY
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IRFD220
Abstract: 417F
Text: International S Rectifier PD-9.417F IRFD220 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V ^DS on = 0 -8 0 Q
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IRFD220
IRFD220
417F
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MPF256
Abstract: IRFD220 IRFD221 IRFD222 IRFD223 1RFD220-223 C96d 1RFD220 diode T35 -4-D6
Text: MOTOROLA SC ÌXSTRS/R 6367254 DET|h3b?5S4 OQöSbflT 0 F> MOTOROLA SC XSTRS/R 96D F 82689 D r - z ? -'¿s' MPF256 CA SE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M R A T IN G S S ym bol Value U nit Drain-Source Voltage Vd S ±30 Vdc Drain-Gate Voltage Vd G
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Lj3b7E54
MPF256
O-226AA)
0j7l010lÂ
MPF256
IRFD220
IRFD221
IRFD222
IRFD223
1RFD220-223
C96d
1RFD220
diode T35 -4-D6
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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