1SS401 Search Results

Contextual Info: 1SS401 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications Low forward voltage : VF 3 = 0.38 V (typ.) Low reverse current : IR = 50µA (max) Small total capacitance : CT = 46 pF (typ.) Maximum Ratings (Ta = 25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS401 SOT-323 Schottoky Barrier Diode FEATURES Low forward voltage Low reverse current Small total capacitance 1 3 2 MARKING: D9 Maximum Ratings @Ta=25℃ Parameter Symbol

030619EAA

Abstract: 1SS401
Contextual Info: 1SS401 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications Low forward voltage : VF 3 = 0.38 V (typ.) Low reverse current : IR = 50µA (max) Small total capacitance : CT = 46 pF (typ.) Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications z Low forward voltage : VF 3 = 0.38 V (typ.) z Low reverse current : IR = 50 A (max) z Small total capacitance : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C)

ISS401

Abstract: 1SS401
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS401 Schottoky DIODES SOT-323 FEATURES Low forward voltage : VF=0.38V typ. Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.) 1.ANODE 2. NC 3. CATHODE

SS-401

Contextual Info: 1SS401 T O SH IB A TENTATIVE TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATIONS • • • Low Forward Voltage Low Reverse Current Small Total Capacitance 1 SS401 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE : VF 3 = 0.38 V (Typ.) : Ir = 50 fxA (Max.) : CT = 46 pF (Typ.)

Contextual Info: 1SS401 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

marking D9 diode

Abstract: SOT 323 marking D9 transistor marking D9 1SS401 040G MARKING C SOT-323 sot323 marking K
Contextual Info: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS401 FEATURES Pb z Small total capacitance. z Low reverse current. z Low forward voltage:VF=0.38V typ . Lead-free APPLICATIONS z For general purpose applications. SOT-323 ORDERING INFORMATION

Contextual Info: 1SS401 Schottoky Diode SOT-323 1.ANODE 2. NC 3. CATHODE Features — — — Low forward voltage : VF=0.38V typ. Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.) Dimensions in inches and (millimeters) MARKING: Maximum Ratings @TA=25℃

Contextual Info: 1SS401 T O SH IB A TENTATIVE TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATIONS • • • 1 SS401 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Low Forward Voltage Low Reverse Current Small Total Capacitance Unit in mm VF 3 = 0.38 V (Typ.) Ir = 50 fj.A (Max.) CT = 46 pF (Typ.)

marking D9 diode

Abstract: transistor marking D9 marking D9 marking 38 Rm25 maximum current rating of diodes SMD MARKING 1SS401
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING APPLICATIONS 1SS401 Features Low forward voltage:VF 3 = 0.38 V(Typ) Low reverse current:IR = 50 A Small total capacitance:CT = 46 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM 25 V Reverse voltage

1SS401

Contextual Info: 1SS401 TENTATIVE TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS401 High Speed Switching Applications Unit in mm l Low forward voltage : VF 3 = 0.38 V (typ.) l Low reverse current : IR = 50µA (max) l Small total capacitance : CT = 46 pF (typ.)

1SS401

Contextual Info: TOSHIBA TENTATIVE 1SS401 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS401 HIGH SPEED SWITCHING APPLICATIONS Unit in mm • Low Forward Voltage : VF 3 —0.38 V (Typ.) • Low Reverse Current : I r = 50 juA (Max.) • Small Total Capacitance

marking D9

Contextual Info: 1SS401 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 25 Volts FORWARD CURRENT – 0.3 Ampere FEATURES SOT-323 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-323 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA

1SS401

Contextual Info: 1SS401 東芝ダイオード エピタキシャルショットキバリア形 1SS401 ○ 高速スイッチング用 z 順電圧が小さい。 z 逆電流が小さい。 z 端子間容量が小さい。 単位: mm : VF 3 = 0.38V (標準) : IR = 50 A (最大)

Contextual Info: Product specification 1SS401 Features Low forward voltage:VF 3 = 0.38 V(Typ) Low reverse current:IR = 50 A Small total capacitance:CT = 46 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Maximum (peak) reverse voltage Symbol Rating Unit V RM 25 V Reverse voltage

Contextual Info: 1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications z Low forward voltage : VF 3 = 0.38 V (typ.) z Low reverse current : IR = 50 A (max) z Small total capacitance : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 Unit: mm High Speed Switching Applications z Low forward voltage : VF 3 = 0.38 V (typ.) z Low reverse current : IR = 50 A (max) z Small total capacitance : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C)

1SS401

Contextual Info: 1SS401 TENTATIVE TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS401 High Speed Switching Applications Unit in mm Low forward voltage : VF 3 = 0.38 V (typ.) Low reverse current : IR = 50µA (max) Small total capacitance : CT = 46 pF (typ.) Maximum Ratings (Ta = 25°C)

1SS401

Contextual Info: 1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications z Low forward voltage : VF 3 = 0.38 V (typ.) z Low reverse current : IR = 50 A (max) z Small total capacitance : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3