2 CHANNEL N-CHANNEL MOSFET Search Results
2 CHANNEL N-CHANNEL MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TK065U65Z |
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MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL |
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TK5R1P08QM |
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MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK |
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TK190E65Z |
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N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOSⅥ |
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TK090U65Z |
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MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL |
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TK5R3E08QM |
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MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB |
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2 CHANNEL N-CHANNEL MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BTA 16 6008
Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1
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Si4824DY Si4824DY-T1 S-31726--Rev. 18-Aug-03 BTA 16 6008 bta 06 400 v BTA 06 600 T application note BTA 600 | |
uPA67
Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T
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PA500 PA600 200mA PA572T PA672T PA502T PA602T PA606T PA611TA PA573T uPA67 SC74A uPA672T UPA572T upa500 uPA600 UPA607T | |
NDS9942
Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
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OCR Scan |
bSD1130 NDS9942 NDS9943* NDS9952 NDS9958* National Semiconductor Discrete catalog SOIC-8 NDS9943 NDS9958 P channel SOIC8 | |
Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V |
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Si4503DY S-20894--Rev. 17-Jun-02 | |
Si4503DY
Abstract: Si4503
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Si4503DY 18-Jul-08 Si4503 | |
Mosfet Array 15 pin
Abstract: V2557 LH1162AAP mosfet array
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OCR Scan |
LH1162AAP T-Y3-25 LH1162AAP a0S002h Mosfet Array 15 pin V2557 mosfet array | |
lm358 current sense
Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
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OCR Scan |
PWR-NCH201 OTO70° PWR-NCH201BNC1 16-PIN PWR-NCH201BNC2 PWR-NCH201BNC3 lm358 current sense lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet | |
Si4310BDYContextual Info: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14 |
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Si4310BDY SO-14 08-Apr-05 | |
Si4814DYContextual Info: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V |
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Si4814DY S-03951--Rev. 26-May-03 | |
Si4376DY
Abstract: Si4376DY-T1 Si4830DY
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Si4376DY Si4830DY 08-Apr-05 Si4376DY-T1 | |
Contextual Info: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V |
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Si4818DY Si4818DY-T1 18-Jul-08 | |
Si4308DYContextual Info: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V |
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Si4308DY SO-14 Si4308DY-T1 S-32078--Rev. 13-Oct-03 | |
Contextual Info: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V |
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Si4814DY S-31421â 07-Jul-03 | |
CI 3060 elsys
Abstract: Si4310BDY
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Si4310BDY SO-14 18-Jul-08 CI 3060 elsys | |
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Si4350DY
Abstract: Si4350DY-T1
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Si4350DY SO-14 Si4350DY-T1 18-Jul-08 | |
Si4924DY-T1
Abstract: Si4924DY
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Si4924DY Si4924DY-T1 18-Jul-08 | |
CH21212Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5 |
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Si4814BDY S-50342--Rev. 28-Feb-05 CH21212 | |
Si4978DYContextual Info: Si4978DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.023 @ VGS = 10 V 7.0 0.032 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.027 @ VGS = 4.5 V |
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Si4978DY Si4978DY--E3 Si4978DY-T1--E3 S-40856--Rev. 03-May-04 | |
Si4376DY
Abstract: Si4376DY-T1 Si4830DY
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Si4376DY Si4830DY S-31726--Rev. 18-Aug-03 Si4376DY-T1 | |
Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V |
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SiA519EDJ 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
65176Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V |
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SiA519EDJ 2002/95/EC SC-70-6 11-Mar-11 65176 | |
65176
Abstract: S0926 SIA519
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SiA519EDJ 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 65176 S0926 SIA519 | |
Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6 |
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Si4816DY Si4816DY-T1 Vol10 S-31726--Rev. 18-Aug-03 | |
Si4914DY
Abstract: S408 si4914dy-t1-e3
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Original |
Si4914DY S-40855--Rev. 03-May-04 S408 si4914dy-t1-e3 |