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    2 CHANNEL N-CHANNEL MOSFET Search Results

    2 CHANNEL N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK065U65Z
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK190E65Z
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOSⅥ Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    2 CHANNEL N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BTA 16 6008

    Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1
    Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V


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    Si4824DY Si4824DY-T1 S-31726--Rev. 18-Aug-03 BTA 16 6008 bta 06 400 v BTA 06 600 T application note BTA 600 PDF

    uPA67

    Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T
    Contextual Info: DUAL N & P CHANNEL SMALL SIGNAL MOSFETS µPA500 & µPA600 SERIES • DUAL N CHANNEL, DUAL P CHANNEL AND A COMBINED N AND P CHANNEL • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V N Type 1 5 1 2 P Type 2 4 5 3 1 N Type 4


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    PA500 PA600 200mA PA572T PA672T PA502T PA602T PA606T PA611TA PA573T uPA67 SC74A uPA672T UPA572T upa500 uPA600 UPA607T PDF

    NDS9942

    Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
    Contextual Info: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3


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    bSD1130 NDS9942 NDS9943* NDS9952 NDS9958* National Semiconductor Discrete catalog SOIC-8 NDS9943 NDS9958 P channel SOIC8 PDF

    Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V


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    Si4503DY S-20894--Rev. 17-Jun-02 PDF

    Si4503DY

    Abstract: Si4503
    Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V


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    Si4503DY 18-Jul-08 Si4503 PDF

    Mosfet Array 15 pin

    Abstract: V2557 LH1162AAP mosfet array
    Contextual Info: A T & T MELEC I C 2SE D • OOSQOSb Daasas? Q ■ QUAD HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY_ LH1162AAP ADVANCE T -Y 3 -2 5 Monolithic N-Channel Enhancement-Mode Description The LH1162AAP Quad High-Voltage N-Channel M O SFET Array contains four independent N-Channel DM OS drivers


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    LH1162AAP T-Y3-25 LH1162AAP a0S002h Mosfet Array 15 pin V2557 mosfet array PDF

    lm358 current sense

    Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
    Contextual Info: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201


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    PWR-NCH201 OTO70° PWR-NCH201BNC1 16-PIN PWR-NCH201BNC2 PWR-NCH201BNC3 lm358 current sense lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet PDF

    Si4310BDY

    Contextual Info: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14


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    Si4310BDY SO-14 08-Apr-05 PDF

    Si4814DY

    Contextual Info: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V


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    Si4814DY S-03951--Rev. 26-May-03 PDF

    Si4376DY

    Abstract: Si4376DY-T1 Si4830DY
    Contextual Info: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V


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    Si4376DY Si4830DY 08-Apr-05 Si4376DY-T1 PDF

    Contextual Info: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V


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    Si4818DY Si4818DY-T1 18-Jul-08 PDF

    Si4308DY

    Contextual Info: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V


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    Si4308DY SO-14 Si4308DY-T1 S-32078--Rev. 13-Oct-03 PDF

    Contextual Info: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V


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    Si4814DY S-31421â 07-Jul-03 PDF

    CI 3060 elsys

    Abstract: Si4310BDY
    Contextual Info: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14


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    Si4310BDY SO-14 18-Jul-08 CI 3060 elsys PDF

    Si4350DY

    Abstract: Si4350DY-T1
    Contextual Info: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V


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    Si4350DY SO-14 Si4350DY-T1 18-Jul-08 PDF

    Si4924DY-T1

    Abstract: Si4924DY
    Contextual Info: Si4924DY Vishay Siliconix Asymetrical Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0105 @ VGS = 10 V 11.5 0.0145 @ VGS = 4.5 V 10 D1


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    Si4924DY Si4924DY-T1 18-Jul-08 PDF

    CH21212

    Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


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    Si4814BDY S-50342--Rev. 28-Feb-05 CH21212 PDF

    Si4978DY

    Contextual Info: Si4978DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.023 @ VGS = 10 V 7.0 0.032 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.027 @ VGS = 4.5 V


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    Si4978DY Si4978DY--E3 Si4978DY-T1--E3 S-40856--Rev. 03-May-04 PDF

    Si4376DY

    Abstract: Si4376DY-T1 Si4830DY
    Contextual Info: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V


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    Si4376DY Si4830DY S-31726--Rev. 18-Aug-03 Si4376DY-T1 PDF

    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


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    SiA519EDJ 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    65176

    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


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    SiA519EDJ 2002/95/EC SC-70-6 11-Mar-11 65176 PDF

    65176

    Abstract: S0926 SIA519
    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


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    SiA519EDJ 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 65176 S0926 SIA519 PDF

    Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6


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    Si4816DY Si4816DY-T1 Vol10 S-31726--Rev. 18-Aug-03 PDF

    Si4914DY

    Abstract: S408 si4914dy-t1-e3
    Contextual Info: Si4914DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.023 @ VGS = 10 V 7.0 0.032 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.027 @ VGS = 4.5 V


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    Si4914DY S-40855--Rev. 03-May-04 S408 si4914dy-t1-e3 PDF