BS0113G Search Results

NDS9942

Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
Contextual Info: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3

NPDS402

Abstract: NPDS403 NPDS404 NPDS406
Contextual Info: NPDS402 / NPDS403 1 NPDS404 / NPDS406 Discrete POWER & S ignal Technologies National Semiconductor" NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* TA = 25"C unless otherwise noted

NDS8936

Contextual Info: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDP505A

Abstract: B23 j ZENER DIODE NDP506A zener Diode B23
Contextual Info: rvtrih ^r 1QQ1 Semiconductor NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high

MMBT3906

Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
Contextual Info: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­

DG 402 rp

Contextual Info: NPDS402 I NPDS403 I NPDS4041 NPDS406 Discrete POWER & Signal Technologies National Semiconductor" t ß NPDS402 NPDS403 NPDS404 NPDS406 D2 s2 — NC ^ S O -8 % NC D1 S1 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings*

NPD5566

Abstract: NPD5564 npd5565 2n3819 replacement jfet selection guide J2N6485 NDF9406 2N5245 replacement 2N5248 nf5102
Contextual Info: NATL SEUICOND 6 5 0 1130 <D •o 3 a c o ■ IB o a> </ {DISCRETE} NATL " S E M I CO N D, 2û DE t S D 1 1 3 D 28C (D ISCR ETE) ào r+- QD35470 35470 D r-j/ ~ (T> r \ i ru oj n cm w r* r*» Is » t CJ Ci 2 j w 2J W 0 > 0 ) 0 ) 0 j 0 ) 0 ) 0 > 0 > 0 ) 0 ) 0 ) 0 ) 0 ) 0 > 0 > 0 ) 0 >

NDT410EL

Contextual Info: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

NPN sot23 mark NF

Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C S0113D
Contextual Info: S e m i c o n d u c t o r " BC846A BC846B BC847A BC847B BC847C SOT-23 SOT-23 Mark: 1 A ./1 B Mark: 1 E ./ 1 F ./ 1 G . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1.0 jiA to 50 mA.

FDH333

Abstract: 333 marking Diode
Contextual Info: Semiconductor" FDH/FDLL 300/A / 333 r CO LOR BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPAN HAS NO RELATIONSHIP TO THE \ OF THE CATHODE TERMINAL v 1ST BAND 2ND BAND FOLL3QO FDLL300A BROWN BROWN G REEN YELLOW FDLL333 BROWN BLUE v GAP High Conductance Low Leakage Diode

2N5133

Abstract: 2N3565
Contextual Info: This NPN Transistors NATL 2N929 Case Style TO-18 VCBO v CEO V ebo V (V) (V) Min Min Min 45 45 5 'CB0 VCB (nA)@ “ Max 11 10 hFE Min Max 45 350 By 60 40 2N929A TO-18 60 45 6 2 Its 60 40 25 45 45 5 10 45 600 150 100 TO-18 60 60 6 10 45 60 60 6 10 45 2N3246

PN2907A

Abstract: sot-23 M
Contextual Info: / MMPQ2907/ NMT2907 I PZT2907A Discrete POWER & Signal Technologies National Semi conduct or ' " MMBT2907A PN2907A PZT2907A SOT-23 SOT-223 M ark: 2F NMT2907 PN2907A I MMBT2907A MMPQ2907 SOIC-16 C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier

dual P-CHANNEL 30V DS MOSFET

Abstract: NDS8958 Dual N & P-Channel MOSFET
Contextual Info: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

T3D diode

Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
Contextual Info: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

797L

Abstract: NDS9952A 0040027
Contextual Info: May 1996 N ational f i Semiconductor" NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS

Contextual Info: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

NDS8926

Abstract: WNL 760
Contextual Info: e» National July 1 9 9 6 Semiconductor" NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology.

j201 national

Abstract: J201 national j201 J202 MMBFJ201 MMBFJ202 T092 SOT23 N-Channel mark 6
Contextual Info: J201 / J202 / MMBFJ201 / MMBFJ202 & Discrete POW ER & Sig n a l Technologies National S e m i c o n d u c t o r ’ MMBFJ201 MMBFJ202 J201 J202 SOT-23 M ark: 62P / G2Q N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general

LL34

Abstract: LL-34 FDLL457 FDLL300 FDLL333 FDLL456 FDLL456A FDLL457A FDLL458 FDLL458A
Contextual Info: National Semiconductor SEMICOND Surface Mount Diodes NATL Surface Mount Devices Low Leakage Diodes by Descending Bv LEADLESS GLASS PACKAGE FDLL300 Package No. By (V) Min ln <nA) Max LL-34 150 1.0 @ Vr H Vf « Max * If mA c PF Max DISCRETE Device No. Proc.

NDS9400A

Contextual Info: Nat i ona I May 1996 Semiconductor" NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

ic nn 5198 k

Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
Contextual Info: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base

TRANSISTOR 2SC 950

Abstract: NDT454P c25f
Contextual Info: ß National Semiconductor" June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS9410A

Contextual Info: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS9953A

Contextual Info: Na t i o n a l Semiconductor" M ay 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.