2 MEGABIT Search Results

256KX16

Abstract: rage 128
Contextual Info: DENSE-PAC 4 Megabit CMOS EEPROM DPE 1 2 8 C 3 2 V MICROSYSTEMS D E S C R IP T IO N : The DPE128C32V isahigh-perform ance Electrically Erasable and Programmable Read O n ly Memory EEPROM module and may be organized as 1 2 8 K X 3 2 , 2 5 6 K X 16 o r5 1 2 K X 8 .

Contextual Info: Paradigm' L .T M lG 'iü 0D D D 3Ö 3 P D M 41028SA P D M 41028LA 177 1 Megabit Static RAM 256K x 4-Bit IPA T Features Description □ High speed access times Com'l: 1 2 ,1 5 ,1 7 ,2 0 and 25ns Ind'l: 1 5 ,1 7 ,2 0 ,2 5 , and 35ns M il: 1 5 ,1 7 ,2 0 ,2 5 , and 35ns

Contextual Info: SEE S G S D - • T E H t 7 [ì 2 cì 2 3 7 O t J M W S M O O i 3T4 ■ SGTH S fi S - T H O M S O N N g 0037b2b S M 2 T 7 C 2 1 - ^ / 3 - 2 *? CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­

Contextual Info: PARADIGM^ b m iM O Q0 0 Q 3 7 S QTQ ——PDM41027SA ipatPDM41 027LA 1 Megabit Static RAM 1 Meg x 1-Bit Features Description □ High speed access times Com'l: 1 2 ,1 5 ,1 7 ,2 0 ,2 5 and 35ns M il: 1 5 ,1 7 ,2 0 ,2 5 ,3 5 ,4 5 , and 55ns The PDM41027 is a high performance CMOS static

Contextual Info: PARADIGM TECHNOLOGY PARADIGM INC SOE J> K ^ iS -lO 1 Megabit Static RAM 256K x 4-Bit PDM41028S PDM41028L Features Description □ High speed access times Com'l: 2 0 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41028S

Contextual Info: B\RADIGM- b 11410110 0 0 0 0 1 ,2 1 »do • p a t P D M 4 1 0 9 8 L 4 Megabit Static RAM 1 Meg x 4-Bit Features Description □ High speed access times Com'l: 1 5 ,1 7 ,2 0 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns The PDM41098 is a high performance CMOS static

Contextual Info: DENSE-PAC 8 Megabit CM OS SRAM DPS256S32AW MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: The D P S 2 5 6 S 3 2 A W is a 2 5 6 K x 32 high-density, static RAM module comprised of eight 1 2 8 K x 8 m o nolithicSRA M 's,an advanced high-speed CM O S decoder,

M27C202

Contextual Info: À T # S G » » S i - l T L H i O O M T S ® O N * ! M 2 7 C 2 2 2 Megabit 128K x16 OTP EPROM PRODUCT PREVIEW • FAST ACCESS TIME: 70ns ■ LOW POWER ’’CMOS" CONSUMPTION: - Active Current 50mA - Standby Current 100|iA ■ PROGRAMMING VOLTAGE: 12.75V

Contextual Info: B\RADlGM" bTHlüTQ GGQÜMST DTI • patPDM41 096S PDM41096L 4 Megabit Static RAM 512K x 8-Bit Features Description □ High speed access times Com'l: 1 5 ,1 7 ,2 0 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns The PDM41096 is a high performance CMOS static

Contextual Info: DENSE-PAC 4 MEGABIT FLASH EEPROM M ICROSYSTEM S D P Z 1 2 8 X 3 2 V I/D P Z 1 2 8 X 3 2 V IP DESCRIPTION: The D P Z 128X32VI/VIP is a 4 megabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH

Contextual Info: W D EDI88257CA \ 256Kx8 Static Ram ELECTRONIC DESIGNS, INC. 256Kx8 Static RAM CMOS, Monolithic Features 256Kx8 bit CMOS Static Random Access Memory The EDI88257CA is a 2 megabit Monolithic CMOS Static • Access Times: 2 0 ,2 5 ,3 5 ,4 5 and 55ns RAM. •

AM27C1024

Abstract: ZDA11 06780-007E AM27C1024-155
Contextual Info: ADV MICRO MEMORY 33E D • 0 5 5 7 5 5 6 Q O gflflH b 1 ■ A M D 4 * T - 4 6 - 1 3 - 2 9 ' T - 4 4 - l 3 - 2 5 r A m 2 7 C 1 2 Advanced Micro Devices 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrlte p ro gram m in g

Contextual Info: PARADIGM 1 Megabit Static RAM 1 Meg x 1-Bit PDM41027S PDM41027L Features Description □ High speed access times Com'l: 20 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55n □ Low power operation - PDM41027S Active: 400mW typ. Standby: 150 mW (typ.)

Contextual Info: W D EDI88257CA \ 256Kx8 Static Ram ELECTRONIC DESIGNS, INC. 256m Static RAM CMOS, Monolithic Features 256Kx8 bit CMOS Static Random Access Memory The EDI88257CA is a 2 megabit Monolithic CMOS Static • Access Times: 2 0 ,2 5 ,3 5 ,4 5 and 55ns RAM. • Data Retention Function LP version

TME 57

Contextual Info: M DI EDI8F82046C 2 MegxB SRAM Module ELECTRONIC DESIGNS N C 2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout I,Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

Contextual Info: b im o io IM A D IG D D D o m a 7 3 4 • P A T p D | \ / | 4 io 9 7 S PDM41097L M 4 Megabit Static RAM 4 Meg x 1-Bit Features Description □ High speed access times Com'l: 1 5 ,1 7 ,2 0 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns The PDM41097 is a high performance CMOS static

Contextual Info: DENSE-PAC 8 Megabit High Speed CMOS SRAM MICROSYSTEMS DPS256X32CV3./DPS256X32BV3 DESCRIPTIO N: The D P S 2 5 6 X 3 2 C V 3 / D P S 2 5 6 X 3 2 B V 3 "V E R S A -S T A C K " m odule is a revolutionary new high speed m em ory subsystem using Dense-Pac Microsystem s' ceramic Stackable Leadless Chip Carriers S L C O mounted on

TMP86FS49UG

Abstract: TB6558FLG TB6590FTG TB6593FNG TB6598FNG TC59YM916BKG TMP86FS64FG 27 mhz toy airplane TCA62735FLG toy motor Control IC
Contextual Info: TOSHIBA SEMICONDUCTOR BULLETIN EYE JUNE 2005 VOLUME 155 CONTENTS New Products The second generation 512-megabit XDR DRAM .2 Charge Pump White LED Driver with Constant Current Regulator .2

Contextual Info: ^EDI ED18F82048C 2 UegxB SRAM Module E lf C m O N C DC9QNS. NC. 2 Megabits x 8 Static RAM CMOS, Module F ea tu re s The EDI8F82048C is a 16 megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multi-layered 2 Meg x 8 bit CMOS Static epoxy laminate FR4 substrate.

Contextual Info: ££ Cost E ffective Solution fo r the 2 MB F lash C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes Stop Tim er for Program/Erase

ZDA16

Abstract: 15452-005B
Contextual Info: ADV MI C RO MEMORY MöE D • 025752Û Preliminary GG30S1S 2 ■ AMDM T - 4 6 - 1 3 -2 9 * Advanced A m 2 7 C 4 0 0 M ic r o 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) ROM Compatible CMOS EPROM Devices DISTINCTIVE CHARACTERISTICS ■ ■ Fast access time

7m4017

Contextual Info: Integrated DeviceTechnology Inc 2 MEGABIT 64K x 32 CMOS STATIC RAM MODULE ID T 7 M 4 0 1 7 FEATURES: DESCRIPTION: • High-denslty 2 megabit (64K x 32) CMOS static RAM module The IDT7M4017 Isa 2 megabit (64K x 32) high-speed static RAM module constructed on a co-fired ceramic substrate using eight

Contextual Info: Cost Effective Solution for the 2 MB Flash ££ C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes ■ Stop Tim er for Program/Erase

tx8205

Contextual Info: < DENSE-PAC MICROSYSTEMS ,p 8 Megabit High Speed CMOS SRAM DPS256X32CV3/DPS256X32BV3 DESCRIPTION: T h e D P S 2 5 6 X 3 2 C V 3 /D P S 2 5 6 X 3 2 BV3 "V E R S A -S T A C K " m o d u le is a re v o lu tio n a ry n e w h ig h speed m e m o ry subsystem us in g Dense-Pac