25752FL Search Results

Contextual Info: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase

Contextual Info: ADV MICRO MEMORY MAE D • 0257550 00303^0 S ■AN»4 T -4 6 -1 3-29 Am27C010 Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Easy upgrade from 28-Pin JEDEC EPROMs ■ Fast access time—100 ns ■ Low power consumption:

Am26F010

Abstract: am26f AM28F010
Contextual Info: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption

programming AM29F400

Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Contextual Info: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements

Contextual Info: PRELIMINARY AMD* Am29LV004T/Am29LV004B 4 Megabit 524,288 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • Data Polling and toggle bit DISTINCTIVE CHARACTERISTICS — Detects program and erase cycle completion ■ 2.7 to 3.6 volt, extended voltage range for read

Contextual Info: PRELIMINARY AMD* Am29LV400T/Am29LV400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations — Minimizes system-level power requirements

Contextual Info: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current

Contextual Info: FIN A L Am29F200T/Am29F200B AtlvaM n“ o 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: PRELIMINARY n Am29F080 Advanced Micro Devices 8-Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Embedded Program Algorithms ■ 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements

amd socket 940 pinout

Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
Contextual Info: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to

29F040

Contextual Info: Am29F040 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Com patible with JEDEC-standards

Contextual Info: ADVANCE INFORMATION * Am29F800T/Am29F800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Embedded Program Algorithms

Contextual Info: A D V A N C E IN F O R M A T IO N Am29F016 Advanced Micro Devices 16-Megabit 2,097.152 X 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, w rite, and erase ■ — Minimizes system level power requirements

AM29F200

Contextual Info: FIN A L Am29F200T/Am29F200B Adva^ 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS S.O Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards ■ — P in o u t a n d so ftw a re c o m p a tib le w ith