2.4GHZ LNB Search Results

Contextual Info: AN11102 BFU725F/N1 2.4 GHz LNA evaluation board Rev. 1 — 28 July 2011 Application note Document information Info Content Keywords LNA, 2.4GHz, BFU725F/N1 Abstract This document explains the BFU725F/N1 2.4GHz LNA evaluation Board. AN11102 NXP Semiconductors

RF LNB C band chipset

Abstract: rfw102 RFW488C RFW24-A1 RFW488 white noise Generator 1GHz RFW102 front end RFW24 RFW-102 RF transceiver 2.4GHz wireless charging
Contextual Info: Datasheet October 2002 Rev. 1.03 RFWaves Ltd. RFW102 ISM Transceiver Chipset Key Features • • • • • • • • Designed for short range wireless communication in 2.4GHz - world wide license free band Data rate – up to 1Mb per second Simple interface – 3 line digital interface

Contextual Info: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz

433MHZ amplifier 1w

Abstract: 433 mhz rf amplifier module 5w Smart RF04EB uhf linear amplifier module 5w ic sma 4038 ND 433 A TA31275EVKIT-433 smartrf04eb UGWW2USHN33A dkrn
Contextual Info: RF Wireless Evaluation Kit The Evaluation kits allow for a detailed evaluation of the Transceivers and Receiver. They enable testing of the device’s RF performance and require no additional support circuitry. The RF input uses a 50Ω matching network and an SMA connector for convenient connection to test

bfp410

Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
Contextual Info: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package

Contextual Info: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package

TRANSISTOR SMD MARKING CODE w2

Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Contextual Info: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright

2.4ghz lnb

Abstract: 1008CS-330XMBC ABA-32563 ABA-5X563 s2p aba ABA-51563 ABA-54563 ABA5X563 GRM40X7R102K50 ABA515563
Contextual Info: Using cascaded ABA series for high gain and high isolation amplifier up to 2400MHz Application Note 5227 Introduction Circuit Design This application note describes a two-stage cascaded amplifier using Avago Technologies Broadband Amplifier ABA silicon RF ICs. Avago Technologies

Contextual Info: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

ASR-10SS

Abstract: YAGEO RC0805 raytheon klystron YAGEO RC0402 BGA2715-17 2.4ghz lnb 92F566 BUELA30K gps glonass BGA6489
Contextual Info: RF 手册 第 5 版 附录 Philips Semiconductors RF 产品的生产与设计手册 RF 手册附录 第5版 RF 产品的产品和设计手册 2004 年 10 月 4322 252 06394 RF 手册 附录 Koninklijke Philips Electronics N.V. 2004 年 10 月 1 of 36 RF 手册 第 5 版 附录

Contextual Info: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

MARKING CODE T7s

Abstract: MARKINGCODET7s
Contextual Info: BFP740ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-08 RF & Protection Devices Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

VCO 9GHZ 10GHZ

Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
Contextual Info: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

BFP640ESD

Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

RF TRANSISTOR 10GHZ

Abstract: BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters
Contextual Info: BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor
Contextual Info: 4th edition RF Manual, appendix Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4th edition March 2004 APPENDIX / documentation/rf_manual Document number: 4322 252 06388

Contextual Info: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

BFP840F

Abstract: Germanium Transistor spice gummel LNA ku-band
Contextual Info: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

BFR840L3RHESD

Abstract: Germanium Transistor LNA ku-band
Contextual Info: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

rf transistor frequency 10.0GHz gain 20 dB

Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.