200B1 Search Results

7427 pin configuration

Contextual Info: O K I Semiconductor MTC821M216-xxOBI Static R A M GENERAL DESCRIPTION The MTC821M216-150B1 and MTC821M216-200B1 are 1.25M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

MTC8201M16-200B1

Abstract: MTC8201
Contextual Info: O K I Semiconductor M TC8201M 16-XX0B1 Static RAM GENERAL DESCRIPTION The MTC8201M16-150B1 and MTC8201M16-200B1 are 1M bytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Contextual Info: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Contextual Info: SGS-THOMSON CLP30-200B1 m Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards

tip 220

Abstract: CLP200M CLP30-200B1 LCP1511D VDE0433 VDE0878
Contextual Info: CLP30-200B1 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : Analog and ISDN line cards PABX DESCRIPTION

CLP200M

Abstract: CLP30-200B1 LCP1511D VDE0433 VDE0878
Contextual Info: CLP30-200B1 Application Specific Discretes A.S.D OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards ■ PABX

Contextual Info: TECHNICAL DATA SHEET BNC 50 Ω BULKHEAD JACK SOLDER END 51K516-200B1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-8, MIL-PRF-39012, CECC 22120 Documents Panel piercing B2 Material and plating RF_35/12.04/3.0

Contextual Info: TECHNICAL DATA SHEET BNC 50 Ω BULKHEAD JACK SOLDER END 51K516-200B1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-8, MIL-PRF-39012, CECC 22120 Documents Panel piercing B2 Material and plating RF_35/12.04/3.0

CLP200M

Contextual Info: CLP30-200B1  Application Specific Discretes A.S.D OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards ■ PABX

CLP30-200B1RL

Contextual Info: CLP30-200B1 ASD Application Specific Devices Overvoltage and overcurrent protection for telecom line Features • ■ ■ ■ Dual bidirectional protection device High peak pulse current: – IPP = 40 A (5/310 µs surge) – IPP = 30 A (10/1000 µs surge)

Contextual Info: Technical Data Sheet - Draft RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG 4.3-10 Panel Jack 64K401-200B1 All dimensions are in mm; tolerances according to ISO 2768 m-H

Contextual Info: 200B1R CONNECTOR SYSTEM .079” 2.0mm pitch board-in right-angle type WIRE RANGE PART NO. 200B1R-T MATERIAL/ THICKNESS INSULATION REEL AWG# mm2 FINISH mm O.D.(mm) PCS 24-30 0.2-0.06 BRASS/TIN 0.20 1.5-0.8 10000 200B1R-H SERIES HOUSING MATERIAL : NYLON 66 UL 94V-0

ptc overvoltage protections application note

Abstract: CLP30-200B1 CLP30-200B1RL MM1315
Contextual Info: CLP30-200B1 ASD Application Specific Devices Overvoltage and overcurrent protection for telecom line Features • ■ ■ ■ Dual bidirectional protection device High peak pulse current: – IPP = 40 A (5/310 µs surge) – IPP = 30 A (10/1000 µs surge)

MTC62

Abstract: MTC821
Contextual Info: O K I Semiconductor MTC821M516-xxOBI Static RAM G E N E R A L DESCRIPTION The MTC821M51éi-150Bl and MTC821M516-200B1 are 1.5M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Contextual Info: TECHNICAL DATA SHEET BNC 50 Ω BULKHEAD JACK SOLDER END 51K516-200B1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-8, MIL-PRF-39012, VG 95200, CECC 22120 Documents Panel piercing B2 Material and plating RF_35/12.04/3.0

Contextual Info: 200B1 CONNECTOR SYSTEM .079” 2.0mm pitch board-in type WIRE RANGE PART NO. 200B1-T MATERIAL/ THICKNESS INSULATION REEL AWG# mm2 FINISH mm O.D.(mm) PCS 24-30 0.22-0.05 BRASS/TIN 0.20 1.5-0.8 10000 200B1-H SERIES HOUSING MATERIAL : NYLON 66 UL 94V-0 ACCEPT 200B1-T TERMINAL

static ram 512K

Contextual Info: O K I Semiconductor M T C 8 2 5 1 3 1 6 -xxO BI Static RAM GENERAL DESCRIPTION The MTC8251316-150B1 and MTC8251316-200B1 are 512Kbytes static RAM cards in conformity w ith the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Toshiba 1SV186 varactor

Abstract: FET J133 1SV186 adc20013 J242 c965 1SV245 varactor capacitor diode Lowpass Filter 3 GHz 950-2050
Contextual Info:  ADC20013 Broadcast Satellite Tuner MMIC Rev 0 INTRODUCTION The ADC20013 downconverter is intended for use in the indoor receiver portion of the DBS Direct Broadcast Satellite System. ANADIGICS' 0.5 µm. depletion-mode GaAs process is used to fabricate this device. The chip downconverts inputs in the 950-2050 MHz band

J294

Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

transistor GT 1081

Abstract: MRFG35010AR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for

Contextual Info: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with