Untitled
Abstract: No abstract text available
Text: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed
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200PIN
256MB
32Mx16
TS32MSQ64V4M
TS32MSQ64V4M
64bits
DDR2-400
32Mx16its
200-pin
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Untitled
Abstract: No abstract text available
Text: M470L6423DN0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on sTSOP 32Mx8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.0 May 2002 Rev. 0.0 May 2002 M470L6423DN0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (May 2002) - First release.
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M470L6423DN0
200pin
512MB
64Mx64
32Mx8
64bit
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k4h561638f
Abstract: DDR266 DDR333 ECC SODIMM
Text: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.1 August, 2003 Rev. 1.1 August 2003 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June 2003) - First release
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PDF
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128MB,
256MB
200pin
72-bit
k4h561638f
DDR266
DDR333
ECC SODIMM
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Untitled
Abstract: No abstract text available
Text: M470L1624DT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M470L1624DT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release.
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M470L1624DT0
200pin
128MB
16Mx64
16Mx16
64-bit
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Untitled
Abstract: No abstract text available
Text: 200PIN DDR333 Unbuffered SO-DIMM 512MB With 32Mx8 CL2.5 TS64MSD72V3F Description Placement The TS64MSD72V3F is a 64M x 72bits Double Data Rate SDRAM high-density for DDR333. The TS64MSD72V3F consists of 18pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages 、1pcs PLL
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200PIN
DDR333
512MB
32Mx8
TS64MSD72V3F
TS64MSD72V3F
72bits
DDR333.
18pcs
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Untitled
Abstract: No abstract text available
Text: 200PIN DDR2 533 SO-DIMM 1GB With 64Mx8 CL4 JM533QSJ-1G Placement Description The JM533QSJ-1G is a 128M x 64bits DDR2-533 SO-DIMM. The JM533QSJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed
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200PIN
64Mx8
JM533QSJ-1G
JM533QSJ-1G
64bits
DDR2-533
16pcs
64Mx8bits
200-pin
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Untitled
Abstract: No abstract text available
Text: 200PIN DDR2 400 SO-DIMM 512MB With 64Mx8 CL3 TS64MSQ64V4J Description Placement The TS64MSQ64V4J is a 64M x 64bits DDR2-400 SO-DIMM. The TS64MSQ64V4J consists of 8pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit
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200PIN
512MB
64Mx8
TS64MSQ64V4J
TS64MSQ64V4J
64bits
DDR2-400
64Mx8its
200-pin
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Untitled
Abstract: No abstract text available
Text: 200PIN DDR400 Unbuffered SO-DIMM 512MB With 64Mx8 CL3 TS64MSD64V4J Description Placement The TS64MSD64V4J is a 64M x 64bits Double Data Rate SDRAM high-density for DDR400. The TS64MSD64V4J consists of 8pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a
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200PIN
DDR400
512MB
64Mx8
TS64MSD64V4J
TS64MSD64V4J
64bits
DDR400.
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Untitled
Abstract: No abstract text available
Text: 200PIN DDR266 Unbuffered SO-DIMM 128MB With 16Mx16 CL2.5 TS16MSD64V6G Description Placement The TS16MSD64V6G is a 16M x 64bits Double Data Rate SDRAM high-density for DDR266.The TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
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200PIN
DDR266
128MB
16Mx16
TS16MSD64V6G
TS16MSD64V6G
64bits
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HYM71V32D755AT4
Abstract: HYM71V32D755AT4-8 HYM71V32D755AT4-P HYM71V32D755AT4-S
Text: 32Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 32Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32D755AT4 Series DESCRIPTION The Hynix HYM71V32D755AT4 Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 32Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 200pin
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32Mx72
PC100
32Mx4
HYM71V32D755AT4
32Mx72bits
32Mx4bits
400mil
54pin
200pin
HYM71V32D755AT4-8
HYM71V32D755AT4-P
HYM71V32D755AT4-S
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DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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Untitled
Abstract: No abstract text available
Text: 200pin unbuffered DDR SODIMM SERIAL PRESENCE DETECT 200pin Unbuffered SODIMM SPD Specification 128Mb D-die base Rev. 0.1 Sep. 2001 Revision 0.0 (Aug. 2001) 1. First release for internal use only. Revision 0.1 (September 2001) 1. Changed Byte 93 and Byte 94 each other.
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200pin
128Mb
DDR333
M470L0914DT0-LA0/B0/A2/B3
8MX64
8MX16
K4H281638D-TLA0/B0/A2
4K/64ms
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samsung 2gb ddr2
Abstract: K4T2G074QA M470T5669AZ0 M470T6464AZ3 84FBGA
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC 68FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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200pin
64-bit
68FBGA
84FBGA
K4T1G164QA
256Mbx8
256Mx64
M470T5669AZ0
K4T2G074QA
samsung 2gb ddr2
K4T2G074QA
M470T5669AZ0
M470T6464AZ3
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award Flash BIOS
Abstract: R5C485 VT1612A Realtek 8100BL R5C4 VT82C686B TTL to vga flash disk pcmcia 8mb R5C485II TM5800
Text: EmCORE-t6032 Transmeta Crusoe 800MHz 3.5" Miniboard with VGA/LCD, LAN, USB, PCMCIA PCMCIA 2.5” HDD Holder Features ✱ Transmeta Crusoe 800 MHz Fanless LPT ✱ DDR SDRAM up to 512MB (SODIMM 200pin) ✱ SMI722G8 3D Video Controller with TTL and CRT support
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EmCORE-t6032
800MHz
512MB
200pin)
SMI722G8
10/100Mbps
8100BL
TM5800
800MHz
512MB
award Flash BIOS
R5C485
VT1612A
Realtek 8100BL
R5C4
VT82C686B
TTL to vga
flash disk pcmcia 8mb
R5C485II
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HYM71V32D755AT4
Abstract: HYM71V32D755AT4-8 HYM71V32D755AT4-P HYM71V32D755AT4-S
Text: 32Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 32Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32D755AT4 Series DESCRIPTION The Hynix HYM71V32D755AT4 Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 32Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 200pin
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32Mx72
PC100
32Mx4
HYM71V32D755AT4
32Mx72bits
32Mx4bits
400mil
54pin
200pin
HYM71V32D755AT4-8
HYM71V32D755AT4-P
HYM71V32D755AT4-S
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DDR266
Abstract: DDR333 K4H561638F
Text: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.2 March, 2004 Rev. 1.2 March 2004 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June, 2003) - First release Revision 1.1 (August, 2003)
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128MB,
256MB
200pin
72-bit
DDR266
DDR333
K4H561638F
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Untitled
Abstract: No abstract text available
Text: M470L1624BT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.0 Apr. 2001 Rev. 0.0 Apr. 2001 M470L1624BT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Apr. 2001) 1. First release
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M470L1624BT0
200pin
128MB
16Mx64
16Mx16
64-bit
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M470L6524FL0
Abstract: M470L2923F60
Text: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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512MB,
200pin
512Mb
64Mx8
sTSOPII-300mil
K4H510838F-6*
M470L6524FL0
M470L2923F60
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Untitled
Abstract: No abstract text available
Text: 64MB, 128MB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.2 Rev. 1.2 Mar. 2003 64MB, 128MB Unbuffered SODIMM DDR SDRAM Revision History Revision 1.0 (December, 2002) - First release
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128MB
200pin
64-bit
M470L0914ET0
184Pin
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Untitled
Abstract: No abstract text available
Text: DDR SDRAM 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die with 64 / 72-bit Non ECC / ECC Revision 1.4 March. 2004 Rev. 1.4 March 2004 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM Revision History Revision 1.0 (Feb, 2003)
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256MB,
512MB,
200pin
512Mb
72-bit
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Untitled
Abstract: No abstract text available
Text: 256MB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 256Mb J-die 66 TSOP-II with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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256MB
200pin
16Mx16
K4H561638J
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Untitled
Abstract: No abstract text available
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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200pin
512Mb
64bit
60FBGA
84FBGA
64Mbx8
128Mx64
M470T2953CZ3/M470T2953CZ0
K4T51083QC
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Untitled
Abstract: No abstract text available
Text: DDR SDRAM 256MB, 512MB, 1GB Unbuffered SODIMM Pb-Free DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die with 64 / 72-bit Non ECC / ECC 66 TSOP(II)/54 sTSOP(II) with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revision 1.2 Oct. 2004 256MB, 512MB, 1GB Unbuffered SODIMM Pb-Free
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256MB,
512MB,
200pin
512Mb
72-bit
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K4H561638F
Abstract: DDR266 DDR333
Text: DDR SDRAM 128MB, 256MB SODIMM Pb-Free DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC 66 TSOP(II) with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revision 1.2 Oct. 2004 128MB, 256MB SODIMM Pb-Free DDR SDRAM Revision History
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128MB,
256MB
200pin
72-bit
K4H561638F
DDR266
DDR333
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