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    DQ121 Price and Stock

    Eaton Bussmann SDQ12-100-R

    INDUCT ARRAY 2 COIL 9.61UH SMD
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    DigiKey SDQ12-100-R Digi-Reel 6,488 1
    • 1 $2.26
    • 10 $1.754
    • 100 $1.45
    • 1000 $1.45
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    SDQ12-100-R Cut Tape 6,488 1
    • 1 $2.26
    • 10 $1.754
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    SDQ12-100-R Reel 3,800 3,800
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    • 10000 $1.45
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    Master Electronics SDQ12-100-R
    • 1 -
    • 10 $2.43
    • 100 $2.19
    • 1000 $1.98
    • 10000 $1.69
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    Sager SDQ12-100-R 3,800
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    Eaton Bussmann SDQ12-150-R

    INDUCT ARRAY 2 COIL 15.21UH SMD
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    DigiKey SDQ12-150-R Cut Tape 3,800 1
    • 1 $3.96
    • 10 $3.074
    • 100 $2.3826
    • 1000 $1.8408
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    SDQ12-150-R Digi-Reel 3,800 1
    • 1 $3.96
    • 10 $3.074
    • 100 $2.3826
    • 1000 $1.8408
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    SDQ12-150-R Reel 3,800 3,800
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    Sager SDQ12-150-R 3,800
    • 1 -
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    • 10000 $2.37
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    Eaton Bussmann MDQ-1-2-10

    FUSE GLASS 1.2A 250VAC 3AB 3AG
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    DigiKey MDQ-1-2-10 Bulk 5
    • 1 -
    • 10 $30.088
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    TME MDQ-1-2-10 5
    • 1 -
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    Eaton Bussmann SDQ12-1R0-R

    INDUCT ARRAY 2 COIL 810NH SMD
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    DigiKey SDQ12-1R0-R Digi-Reel 1
    • 1 $4.19
    • 10 $3.256
    • 100 $2.5236
    • 1000 $1.94947
    • 10000 $1.94947
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    SDQ12-1R0-R Reel 3,800
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $1.8625
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    SDQ12-1R0-R Cut Tape 1
    • 1 $4.19
    • 10 $3.256
    • 100 $2.5236
    • 1000 $1.94947
    • 10000 $1.94947
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    Master Electronics SDQ12-1R0-R
    • 1 -
    • 10 $2.72
    • 100 $2.46
    • 1000 $2.21
    • 10000 $1.9
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    Sager SDQ12-1R0-R 3,800
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    • 10000 $2.37
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    Eaton Bussmann SDQ12-1R5-R

    INDUCT ARRAY 2 COIL 1.69UH SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SDQ12-1R5-R Reel 3,800
    • 1 -
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    • 1000 -
    • 10000 $1.7125
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    Sager SDQ12-1R5-R 3,800
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $2.17
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    Find more DQ121 price and stock on Findchips.com

    DQ121 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    256mb ddr333 200 pin

    Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


    Original     		PDF 128Mb: DDR333 MT46V32M4 MT46V16M8 MT46V8M16 256Mb: 256mb ddr333 200 pin A11 MARKING CODE mark DM 8M16 DDR200 DDR266 MT46V16M8 MT46V32M4 MT46V8M16

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


    Original     		PDF UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131

    VDDSPD

    Abstract: IC PIN CONFIGURATION OF 74 47
    Text: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability


    Original     		PDF SL72E5M256M8M-B75EW 184-Pin PC2100) PC2100 DDR266B 133MHz--7 cycles/64ms JEP-106E VDDSPD IC PIN CONFIGURATION OF 74 47

    W3DG6430V-D2

    Abstract: No abstract text available
    Text: White Electronic Designs W3DG6430V-D2 PRELIMINARY* 256MB - 32M x 64 BUFFERED SDRAM MODULE FEATURES DESCRIPTION Burst Mode Operation The W3DG6430V is a 32M x 64 synchronous DRAM module which consists of sixteen 32Mx4 SDRAM components in TSOP II package, three very high speed


    Original     		PDF W3DG6430V-D2 256MB W3DG6430V 32Mx4 W3DG6430V10D2 100MHz W3DG6430V-D2

    transistor marking A19

    Abstract: HANBit 72-pin SIMM simm 72pin HMS2M32M16V HMS2M32Z16V 2m x 32 SRAM SIMM
    Text: HANBit HMS2M32M16V/Z16V SRAM MODULE 8Mbyte 2M x 32-Bit , 3.3V 72-Pin SIMM Design Part No. HMS2M32M16V, HMS2M32Z16V GENERAL DESCRIPTION The HMS2M32M16V/Z16V is a high-speed static random access memory (SRAM) module containing 2,097,152 words organized in a x32-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72-pin, double-sided, FR4printed circuit board.


    Original     		PDF HMS2M32M16V/Z16V 32-Bit) 72-Pin HMS2M32M16V, HMS2M32Z16V HMS2M32M16V/Z16V x32-bit 72-pin, 72Pin-SIMM 32bit transistor marking A19 HANBit 72-pin SIMM simm 72pin HMS2M32M16V HMS2M32Z16V 2m x 32 SRAM SIMM

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM544083U74S6UU 128MByte 4Mx16 DQ111

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


    Original     		PDF SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    SL32

    Abstract: No abstract text available
    Text: SL32 S/T 4B8M2A-Axx 8M X 32 DRAM FPM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL32(S/T)4B8M2A-A60 60ns 15ns 110ns SL32(S/T)4B8M2A-A70 70ns 20ns 130ns SL32(S/T)4B8M2A-A80 80ns 20ns


    Original     		PDF 4B8M2A-A60 110ns 4B8M2A-A70 130ns 4B8M2A-A80 150ns cycles/32ms 24-pin A0-A10 SL32

    SL72B4C16M4F-A60V

    Abstract: Dram 168 pin EDO buffered 0212M
    Text: SL72B4C16M4F-A60V 16M X 72 Bits DRAM 168-Pin DIMM with EDO, ECC , and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns The SiliconTech SL72B4C16M4F-A60V is an 16M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM).


    Original     		PDF SL72B4C16M4F-A60V 168-Pin SL72B4C16M4F-A60V 400-mil 34-pin 168pin 110ns A1-A11 DQ12-15 Dram 168 pin EDO buffered 0212M

    SL64G4B4M2E-A60

    Abstract: No abstract text available
    Text: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech


    Original     		PDF 144-PIN SL64G4B4M2E-A60 104ns SL64G4B4M2E-A60 24-pin 300-mil DQ20-23 A0-A10

    A0-A12

    Abstract: No abstract text available
    Text: SL72U4C16M8F-AxxV 16M X 72 Bit 128MB DRAM 168-Pin Unbuffered DIMM with EDO and ECC FEATURES • • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL…-A50V 50ns 13ns 84ns 20ns SL…-A60V 60ns 15ns 104ns 25ns


    Original     		PDF SL72U4C16M8F-AxxV 128MB) 168-Pin -A50V -A60V 104ns cycles/64ms SL72U4C16M8F-AxxV A0-A12 DQ16-19 A0-A12

    SL32T4C32M4E-A60

    Abstract: edo dram 72-pin simms 32Mx32 edo dram 60ns 72-pin simm
    Text: SL32T4C32M4E-A60 32M X 32 Bits DRAM SIMM with EDO FEATURES • Performance range: tRC tRAC tCAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL32T4C32M4E-A60 is a 32M x 32 bits Dynamic RAM DRAM Single In-line Memory Module (SIMM).


    Original     		PDF SL32T4C32M4E-A60 104ns SL32T4C32M4E-A60 32-pin 400-mil cycles/64ms 72-pin moun0-23 A0-A11 A0-A11 edo dram 72-pin simms 32Mx32 edo dram 60ns 72-pin simm

    Untitled

    Abstract: No abstract text available
    Text: SL72B4B4M4F-A60V 4M X 72 Bit DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns 110ns The SiliconTech SL72B4B4M4F-A60V is a 4M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM). The module


    Original     		PDF SL72B4B4M4F-A60V 168-Pin 110ns SL72B4B4M4F-A60V 24-pin 300-mil 168-pin A1-A11 DQ40-43 DQ8-11

    A0-A17

    Abstract: edge connector 64 pin a1657 30 pin simm memory transistor CS4 SL832256K1F-12AG 28-pin SOJ SRAM
    Text: SL832256K1F-xxAG 256K X 32 Bits SRAM Memory Module 64-Pin SIMM FEATURES GENERAL DESCRIPTION • This product is a 256K x 32 bits Static RAM (SRAM) memory module. The module consists of eight 256K x 4 bits SRAM memory components in 28-pin SOJ packages mounted on a


    Original     		PDF SL832256K1F-xxAG 64-Pin 28-pin 64-pin SL832256K1F-12AG A0-A17 DQ8-11 WEA0-A17 edge connector 64 pin a1657 30 pin simm memory transistor CS4 28-pin SOJ SRAM

    719a

    Abstract: SL32T4C32M4E-A60V
    Text: SL32T4C32M4E-A60V 32M X 32 Bits DRAM SIMM with EDO 3.3V Power Supply FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL32T4C32M4E-A60V is a 32M x 32 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).


    Original     		PDF SL32T4C32M4E-A60V 104ns SL32T4C32M4E-A60V 32-pin 400-mil cycles/64ms 72-pin DQ20-23 A0-A11 A0-A11 719a

    75Z MARKING

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


    Original     		PDF 128Mb: DDR333 256Mb: 128Mx4x8x16DDR333 75Z MARKING

    Untitled

    Abstract: No abstract text available
    Text: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic


    OCR Scan     		PDF STI338000 STI338000-60 STI338000-70 STI338000-80 110ns 130ns 150ns 72-PIN STI338000

    DC244

    Abstract: No abstract text available
    Text: STI644004G1-70SVGS pcbhw^ - j 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-70SVGS is a 4M x 64 bits Dynamic RAM high density memory module;. The Simple Technology STI644004G1-70SVGS consist of s ixteen CMOS


    OCR Scan     		PDF STI644004G1-70SVGS 144-PIN 124ns STI644004G1-70SVGS 24-pin 300-mil DC244

    Untitled

    Abstract: No abstract text available
    Text: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC


    OCR Scan     		PDF IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16Mx64 16Mx72 104ns 75H1640 SA14-4626-02 DD05225

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA- H ^7240 DGíñSbl SEL • THM72V4030BTG-60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTH M 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC51V16400BST on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large


    OCR Scan     		PDF THM72V4030BTG-60/70 72V4030BTG ofTC51V16400BST THMxxxxxx-60) THMxxxxxx-70)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W29L102 64K X 16 CMOS FLASH MEMORY G ENERAL DESCRIPTION The W29L102 is a 1-megabit, 3.3-volt only CMOS tlash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt Vpp is


    OCR Scan     		PDF W29L102 W29L102 12-volt 77nCSf; 8fjg-8-i57S5fjft8 SS2-275131QS

    TME 57

    Abstract: DQ131 45VCci a81s DQ111 A5173
    Text: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECTRONIC DESIGNI N C. 2x256Kx32 Static RAM CMOS, High SpeedModule Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ


    OCR Scan     		PDF EDI9F232256BC 2x256Kx32 EDI9F232256B 2x256K 256Kx4 2322568RW TME 57 DQ131 45VCci a81s DQ111 A5173

    M53241

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte X KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM53241OOAK/AKG 4Mx32 KMM5324100AK 24-pin 72-pin 5324100AK M5324100AK KM44C4100AK M53241