DQ120 Search Results

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

Contextual Info: Data Sheet MU9C Routing CoProcessor RCP Family APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • • • • • • • • • • • • • • • Longest Prefix Match searches of IPv4 addresses 28 Million IPv4 packets per second supports up to 18

AR120

Contextual Info: Data Sheet APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • • • • • • • • • • • • • • • Longest Prefix Match searches of IPv4 addresses 28 Million IPv4 packets per second supports up to 18 Gb Ethernet or 7 OC-48 ATM ports at wire speed

4020-AD

Contextual Info: VIS VP464641641B.VP864641641B 4M,8Mx64-Bit SDRAM SODIMM Module Prelim inary Description The VP464641641B and VP864641641B are 4Mx64-bit and 8Mx64-bit small-outline dual-in-line syn­ chronous dynamic RAM module SODIMM , It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM

Contextual Info: HARRP HLA packaged Asynchronous Data Recognition and Recall Processor MH2080 MHAPPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • • • • • • • • • • • • • • • Quality of Service guaranteed by deterministic compare time 28 Million IPv4 packets per second supports up to 10

DQ124

Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Contextual Info: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

DQ112

Abstract: UG016C14488HSG-6 DQ100 DQ88
Contextual Info: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

D4512

Abstract: d4512844 D29D31 DQ200-V D45128
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.

Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8

Contextual Info: TOSHIBA THM Y7232F0EG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

MT18DT8144G

Contextual Info: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM

smart modular

Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Contextual Info: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

Contextual Info: Datasheet MU9C RCP Family APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • • • • • • • • • • • • • • Longest Prefix Match searches of IPv4 addresses 28 Million IPv4 packets per second supports up to 18 Gb Ethernet or 7 OC-48 ATM ports at wire speed

DQ380-V

Abstract: r2a11 DQ500-V
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC727 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C -4 5 6 4 E C 7 2 7 is a 6 7 ,1 0 8 ,8 6 4 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 36 piece s of

oq 0051

Abstract: pd4564841
Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-4516CD644 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD644 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 64 M SDRAM : ¿jPD4564841 are assembled.

SiS301

Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Contextual Info: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.

3M2 64-PIN

Contextual Info: moi En trente EDI8F32256C Inc , High Speed Eight Megabit SRAM Module 256KX32 Static RAM CMOS, High Speed Module m o D m /* Features The EDI8F32256C isa high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­

Contextual Info: VS864648041 D,VS1664648041D 8M,16MX64-Bit SDRAM Module Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-ln-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4 banks and in standard 54 pin TSOP-II package. Decoupling capacitors are mounted on power supply line for

Contextual Info: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation

tsop 138

Abstract: DQ114
Contextual Info: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation