200T Search Results

resistor 200 ohm

Abstract: xf0803 200T
Contextual Info: 1. M echanical D im ensions: 2 . S c h e m a tic : 1 ch - 0 .7 5 0 Max -o 3 200T IT -O X D XFMRS LO XF0803— CSVP r '- o 4 2 O- YYWW 3. E le ctric a l S p e c ific a tio n s: @25°C 0CL: P 3 - 4 80m H Min @ 1.0KHz,1.0V 0.051 0.041 DCR: P 3— 4 4.5 Ohms Max

Contextual Info: 1. Mechanical Dimensions: 2 . S c h e m a t ic : -o 3 0.480 Max 1T 0.810 Max 1 o- -o 7 -o 4 200T 10 O- 1T XFMRS YYWW -O • XFD763=VCS 8 O 3. E l e c t r i c a l S p e c i f i c a t i o n s : OCL: Pins 1-10 76mH Min @10KHz 1V DCR: Pins 1—10 2.8 Ohms Max

XF0603

Abstract: 200T XF0603-CS6
Contextual Info: 1. M ech an ical D im ensions: 2. S c h e m a tic : 1 o2 o3 o1T 0 .5 4 0 Typ XFM RS XF0603 -C S 6 YYWW r -o 5 3 3 1T 4 o- 200T -o 6 3. E le c tr ic a l S p e cifica tio n : 0 .3 0 0 — HIPOT: 5 0 0 V rm s Wire to Wire i - o o -H I— 0 .0 3 0 o

ga200ts60u

Contextual Info: International USSR Rectifier p re lim in a ry "HALF-BRIDGE" IGBT INT-A-PAK PD'5058 G A 200TS60U Ultra-Fast Speed IGBT Features V qes = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

RD7A

Abstract: RD9A diode yz 088 1N736 RD24A RD11A 1N703 diode 1N706 RD13A 1N724
Contextual Info: • 3541563 FENWAL 83 D 00903 E L E C T R O N I C S / APD ~Û3 ZENER DIODES DE I 3Sm St3 D T -,//- Q GOOCH0 3 □ DO-35 Case 200tnW American Power Devices offers a complete line of quality industrial, com­ mercial and military silicon regulators and temperature-compensated ref­

MPC603EUM

Abstract: XPC603PFE160LC XPC603PFE180LC XPC603PFE200LC XPC603PRX200LD XPC603PRX225LD XPC603PRX240LD XPC603PRX250LD XPC603PRX180LD
Contextual Info: Freescale Semiconductor, Inc. PID7v-603e PS 970707 Motorola Part Numbers Affected: XPC603PFE160/180/200LC XPC603PRX180/200/225/240/250LD XPC603PRX160/180/200LE XPC603PFE166/200TE XPC603PRX166/200TE MO INNDUC ATOR, INC R .2006 Y Application-Specific Information

m6 marking transistor sot-23

Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

s3 db

Contextual Info: n m n iF ien ReSBRRIH %3Êm MODEL 200T2G8 200 WATTS CW 2.5 - 7.5 GHz 160 School House Road, Souderton, PA 18964-8990 USA TEL 215-723-8181 • FAX 215-723-5688 The Model 200T2G8 is a self contained, forced air cooled, broadband traveling wave tube TWT microwave amplifier designed for applications where instantaneous bandwidth and high gain are

Vishay nobel

Contextual Info: Model CLC Vishay Nobel Low Profile Shear Force Load Cell FEATURES • Capacity 25, 50t, 100t and 200t • Other capacities on request • Very low profile • High long-term stability and repeatability • Operating temperature range -40 to +80°C +125°C with

Contextual Info: BYV10-200T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0

MARKING D53 SOT23

Contextual Info: IC SMD Type Product specification 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

ZENER GZA

Abstract: GZA 22 GZB10 ZENER DIODES DZ 7 "Zener Diodes" sanyo
Contextual Info: Quick Guide To Zen r Diodes S A flm Sanyo has a wide v a ri e t y of zener diodes with 200tnw~lw of allowable power di ss i pat ion. moreover, CP package for surface mounting is provided. _ G Z B Series D Z B Series

Contextual Info: VCO Product Specification Model: VCO190-200T Rev: A Date: 4/21/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 150 200 250 MHz X -35 ° to 85 ° C Remarks Tuning Voltage: 150 MHz 1 250 MHz

2SD596

Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

Contextual Info: HIGH VOLTAGE PROFESSIONAL GRADE RESISTORS UHV SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS Resistance values up to 200TΩ 2x1014Ω , tolerances to 1%! Voltage rating to 14KV. Pulse voltage to 50KV avail.

xf0803

Abstract: 200T 208H current sensing transformer
Contextual Info: 2 . Sch em atic: 1. M echanical D im ensions: 1 O- 200T 3 o- 3. E lectrical Specification s: 25°C OCL: Pins 1 -3 80mH Min @15.75KHz,2.0V Pins 1 -3 30mH Min @15.75KHz,2.0V -40'C Q: Pins 1— 3 8 Min @15.75KHz,2.0V Pri Unipolar A uS: 600 Max Pri Bipolar A uS: 1200 Max

aJ-200

Abstract: ycl pcb 452 SDC 2921 TT 2146 ph163539 D2318 LTS 543 seven segment display RGB888 to CCIR656 PIR based human motion DETECTOR CIRCUIT DIAGRAM aJ-102
Contextual Info: Technical Reference Manual Real-time, Low Power Network, Multimedia Direct Execution Microprocessor For The JME Platform aJ-200TTMM . Trade marks aJ-200 is trademark of aJile Systems, Inc. Sun, Sun Microsystems and Java are all trademarks of Sun Microsystems in the United States and other countries. All other trademarks are the property of

GRM615COG

Abstract: GRM708COG ATC650L ATC650S GRM710COG Johanson Dielectrics 250R07 ATC650F 200T
Contextual Info: AVX Competitor Cross Reference Guide for U Dielectrics AVX 04023U ATC ATC650L*25T Johanson 250R07C Murata GRM615COG*25V Taiyo Yuden EVK105CH 06035U N/A N/A GRM706COG*50V N/A 06031U ATC650S*100T 101R14C GRM706COG*100 N/A 06032U ATC650S*200T

200T2G8AM1

Abstract: 200T2G8AM2 200T2G8A PAEO
Contextual Info: MODEL 200T2G8A M1, M2 200 WATTS CW 2.5 - 7.5 GHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 200T2G8A is a self contained, forced air cooled, broadband traveling wave tube TWT microwave amplifier designed for applications where instantaneous bandwidth and high gain are

2SB624

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

Contextual Info: TflexTM 200T V0 Series Thermal Gap Filler Innovative Technology for a Connected World THIN THERMALLY CONDUCTIVITY ELASTOMERIC INTERFACE MATERIAL Tflex 200T V0 is a specially formulated thin gap filler thermal interface material designed for thin interfaces that require a combination good thermal performance with great reliability. The elastomeric property of Tflex™ 200T V0 provides good thermal performance in

XPC603PFE160LC

Abstract: XPE603 MPC603EUM XPC603PFE180LC XPC603PFE200LC MARKING 603E XPC603PRX180LD transistor+D+2375 motorola marking
Contextual Info: PID7v-603e PS 970707 Motorola Part Numbers Affected: XPC603PFE160/180/200LC XPC603PRX180/200/225/240/250LD XPC603PRX160/180/200LE XPC603PFE166/200TE XPC603PRX166/200TE Application-Specific Information PowerPC 603e™ RISC Microprocessor Family: PID7v-603e Valiant Part Number Specifications

Contextual Info: — I 610 MAX. — r 410 MAX I 111 I i m .187 *020 r .030 DIA. PINS TYP. .100 BLUE BEAD *1 1 .410 MAX. .200 T .100 .200T Y P . COIL. 12.0 VDC WINDING a1 CUSTOMER DATA SHEET 254 OHMS i 10% 9 25° C 6 5 VDC MUST OPERATE WINDING n 2 254 OHMS 1 10% 0 25° C 6.5 VDC

sot-23 bv4

Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.