20HX15WX0 Search Results

Contextual Info: HRB0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0047-0200Z Rev.2.00 Sep.01.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HRW0702A Silicon Schottky Barrier Diode for Rectifying REJ03G0159-0600Z Previous: ADE-208-109E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HZC10

Abstract: HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 HZC24
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HRU0103A

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HRW0202A

Abstract: SC-59A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HRC0203B

Abstract: DSA003644
Contextual Info: HRC0203B Silicon Schottky Barrier Diode for Rectifying ADE-208-800 Z Rev. 0 Jun. 1999 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information

HRC0103A

Abstract: DSA003643
Contextual Info: HRC0103A Silicon Schottky Barrier Diode for Rectifying ADE-208-624 Z Rev. 0 May. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information

HRB0103A

Abstract: DSA003642
Contextual Info: HRB0103A Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying ADE-208-490 Z Rev 0 Apr. 1997 Features • Low forward voltage drop and suitable for high effifiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly.

HRU0203A

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

hitachi S17

Abstract: HRW0202A SC-59A DSA003641
Contextual Info: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev. 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HRW0502A

Abstract: SC-59A DSA003637
Contextual Info: HRW0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-108E Z Rev. 5 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA0045

Abstract: SC-59A HRW0302A
Contextual Info: HRW0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-015G Z Rev 7 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HRU0103A

Abstract: Hitachi DSA0045
Contextual Info: HRU0103A Silicon Schottky Barrier Diode for Rectifying ADE-208-450A Z Rev 1 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed

HRC0203C

Contextual Info: HRC0203C Silicon Schottky Barrier Diode for Rectifying REJ03G0619-0300 Previous: ADE-208-1518B Rev.3.00 May 20, 2005 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

Hitachi DSA00359

Contextual Info: HZM4.3FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-468 Z Rev 0 Features • HZM4.3FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information

DSA00285350

Abstract: HRL0103C HRL0103C-N hrl0103
Contextual Info: HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type HRL0103C-N • Extremely small Flat Lead Package (EFP) is suitable for surface mount design.

Contextual Info: HRC0203C Silicon Schottky Barrier Diode for Rectifying REJ03G0619-0300 Previous: ADE-208-1518B Rev.3.00 May 20, 2005 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

Contextual Info: HRC0201A Silicon Schottky Barrier Diode for Rectifying REJ03G0618-0200 Rev.2.00 Jan 09, 2009 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package UFP is suitable for compact and high-density surface mount design.

ADE-208-016C

Abstract: Hitachi DSA002789
Contextual Info: HRW0503A Silicon Schottky Barrier Diode for Rectifying ADE-208-016C Z Rev 3 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

Hitachi DSA002748

Contextual Info: HRU0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-235G Z Rev 7 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed

HRL0103C

Abstract: hrl0103
Contextual Info: HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0100 Rev.1.00 Aug 19, 2004 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Extremely small Flat Package EFP is suitable for surface mount design.

HRC0103A

Contextual Info: HRC0103A Silicon Schottky Barrier Diode for Rectifying REJ03G0146-0100Z Previous: ADE-208-624 Rev.1.00 Nov.26.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design.

HRC0203B

Contextual Info: HRC0203B Silicon Schottky Barrier Diode for Rectifying REJ03G0148-0100Z Previous: ADE-208-800 Rev.1.00 Nov.26.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design.

Contextual Info: HZM4.3FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-468 Z Rev 0 Features • • HZM4.3FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information