DIAC DB3 EQUIVALENT
Abstract: STP16N25 Triac 600v 1a to92 equivalent for DIAC DB3 DB3 Diac EQUIVALENT po130aa 1A 400v scr to220 L6561 200w STD3N50-1 diac 240V
Text: LIGHTING RECOMMENDED DEVICES POWER FACTOR CORRECTION PFC COMPACT FLUORESCENT LAMP (CFL) Mains 5W 10W 20W > 20W BULT118 BULT118 BULT118 BUL381/2 BULK128/D▲ BULK128/Ds BUL381D/2D BUL128/D▲ BUL128/Ds BUL138 110V Mains 120V Package* 9-40W L6560/A L6561 PFC - Controller
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BULT118
BUL381/2
BULK128/Dv
BULK128/Ds
BUL128/Ds
BUL138
BUL381D/2D
BUL128/Dv
DIAC DB3 EQUIVALENT
STP16N25
Triac 600v 1a to92
equivalent for DIAC DB3
DB3 Diac EQUIVALENT
po130aa
1A 400v scr to220
L6561 200w
STD3N50-1
diac 240V
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bd5444
Abstract: RUBYCON CAPACITOR 220M GRM188B11H102KA01 TOKO A7503AY BD5444EFV
Text: Middle Power Class-D Speaker Amplifiers Analog Input / Single End Output Class-D Speaker Amplifier BD5444EFV No.11075ECT15 ●Overview BD5444EFV is a Analog input type Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and
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BD5444EFV
11075ECT15
BD5444EFV
R1120A
bd5444
RUBYCON CAPACITOR 220M
GRM188B11H102KA01
TOKO A7503AY
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bd5444
Abstract: BD5444EFV RUBYCON CAPACITOR 220M GRM1552C1E Speaker 40W 10075EBT15 Rubycon 2200 MCR18EZPF10R0 20W20W capacitor 100uf 50v circuit
Text: Middle Power Class-D Speaker Amplifiers Analog Input / Single End Output Class-D Speaker Amplifier No.10075EBT15 BD5444EFV ●Overview BD5444EFV is a Analog input type Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and
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10075EBT15
BD5444EFV
BD5444EFV
R1010A
bd5444
RUBYCON CAPACITOR 220M
GRM1552C1E
Speaker 40W
10075EBT15
Rubycon 2200
MCR18EZPF10R0
20W20W
capacitor 100uf 50v circuit
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Untitled
Abstract: No abstract text available
Text: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant - Fast Switching Speed - General purpose switching application SOT-323
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BAS19W/20W/21W
OT-323
00-250V/200mA
OT-323
C/10s
BAS19W
BAS20W
BAS21W
S1405006
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MJE521
Abstract: SGS-Thomson MOROCCO B 108 B mje521 npn
Text: MJE521 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package, intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits.
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MJE521
MJE521
OT-32
OT-32
SGS-Thomson
MOROCCO B 108 B
mje521 npn
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SO2222AW
Abstract: SO2907AW
Text: SO2222AW SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222AW 20W SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907AW
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SO2222AW
OT-323
SO2907AW
OT-323
SO2222AW
SO2907AW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAS19W/20W/21W SOT-323 SWITCHING DIODE FEATURES z z z z Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications
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OT-323
BAS19W/20W/21W
OT-323
BAS19W
BAS20W
BAS21W
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marking 20W
Abstract: No abstract text available
Text: SO2222AW SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222AW 20W SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907AW
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SO2222AW
OT-323
SO2907AW
OT-323
marking 20W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAS19W/20W/21W SWITCHING DIODE SOT-323 - FEATURES z z z z Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications
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OT-323
BAS19W/20W/21W
OT-323
BAS19W
BAS20W
BAS21W
-55to
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SOT-323 100-250V/200mA Switching Diode
Abstract: No abstract text available
Text: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Fast Switching Speed - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant SOT-323 MECHANICAL DATA - Case: SOT-323 package
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BAS19W/20W/21W
OT-323
00-250V/200mA
OT-323
C/10s
BAS19W
BAS20W
BAS21W
S1405006
SOT-323 100-250V/200mA Switching Diode
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SO2222AW
Abstract: SO2907AW
Text: SO2222AW SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222AW 20W SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907AW
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SO2222AW
OT-323
SO2907AW
OT-323
SO2222AW
SO2907AW
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BAS21W
Abstract: BAS19W BAS20W 20W SOT kt3 diode marking ka8
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAS19W/20W/21W SWITCHING DIODE SOT-323 - FEATURES z z z z Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications
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OT-323
BAS19W/20W/21W
OT-323
BAS19W
BAS20W
BAS21W
-55to
BAS21W
BAS19W
BAS20W
20W SOT
kt3 diode
marking ka8
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diode marking 20W
Abstract: No abstract text available
Text: BAS19W/20W/21W Switching Diode SOT-323 - + Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance Marking: BAS19W BAS20W BAS21W KA8 KT2 KT3 Dimensions in inches and millimeters
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BAS19W/20W/21W
OT-323
BAS19W
BAS20W
BAS21W
-55to
BAS21W
diode marking 20W
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MJE521
Abstract: No abstract text available
Text: MJE521 SILICON NPN TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits.
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MJE521
MJE521
OT-32
OT-32
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MJE521
Abstract: mje521 npn SGS-Thomson
Text: MJE521 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package, intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits.
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MJE521
MJE521
OT-32
OT-32
mje521 npn
SGS-Thomson
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MJE521
Abstract: No abstract text available
Text: MJE521 SILICON NPN TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits.
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MJE521
MJE521
OT-32
OT-32
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95 MARKING
Abstract: No abstract text available
Text: PJESDA6V8-5LCG LOW CAPACITANCE SOT-563 5-LINE TRANSIENT VOLTAGE SUPPRESSOR ARRAY FOR ESD PROTECTION FEATURES • ESD Protection : IEC61000-4-2 8KV Contact 15KV Air • Five Separate Unidirectional Configuration for Protection • Low Leakage Current • Peak Power Dissipation of 20W@8/20 s
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OT-563
IEC61000-4-2
2002/95/EC
OT-563,
MIL-STD-750,
8/20s)
8/20s
2011-REV
95 MARKING
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sot428 Part marking
Abstract: No abstract text available
Text: RCD051N20 RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source
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RCD051N20
760mW
SC-63)
OT-428>
R1120A
sot428 Part marking
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Untitled
Abstract: No abstract text available
Text: RSD201N10FRA Nch 100V 20A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 100V RDS on (Max.) 46mW ID 20A PD 20W CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit lFeatures (3) 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed.
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RSD201N10FRA
AEC-Q101
SC-63)
OT-428>
R1120A
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Untitled
Abstract: No abstract text available
Text: RSD221N06FRA Nch 60V 22A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 60V RDS on (Max.) 26mW ID 22A PD 20W CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit lFeatures (3) 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed.
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RSD221N06FRA
AEC-Q101
SC-63)
OT-428>
R1120A
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Untitled
Abstract: No abstract text available
Text: R6004END Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6004END
SC-63)
OT-428>
R6004E
R1102A
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RCD100N19
Abstract: No abstract text available
Text: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.
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RCD100N19
182mW
SC-63)
OT-428>
R1120A
RCD100N19
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mje521
Abstract: mje521 npn
Text: SGS-THOMSON MJE521 _ SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package, intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits.
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MJE521
MJE521
OT-32
OT-32
Emitter-Bas150
300jis,
mje521 npn
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BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623
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OT-23
KSC2223
KSC2715
KSC1623
KSC2715
KSC1674
BD53A
KSA733
KSC1330
KSC945
BD139
BD433 TO92
KSE 13007 L
ss8050 sot-23
KSE13009F
KSP10
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