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    TE Connectivity 350210MJT

    RES 3502 10M 5%
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    DigiKey 350210MJT Cut Tape 7,865 1
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    350210MJT Digi-Reel 7,865 1
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    350210MJT Reel 4,000 2,000
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    Avnet Americas 350210MJT Reel 12 Weeks, 5 Days 4,000
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    Mouser Electronics 350210MJT
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    Newark 350210MJT Cut Tape 725 10
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    350210MJT Reel 4,000
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    Avnet Abacus 350210MJT 17 Weeks 4,000
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    Master Electronics 350210MJT
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    TE Connectivity 352210MJT

    RES SMD 10M OHM 5% 3W 2512
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    DigiKey 352210MJT Digi-Reel 1,216 1
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    352210MJT Cut Tape 1,216 1
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    352210MJT Reel 2,000
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    Mouser Electronics 352210MJT 4,289
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    Newark 352210MJT Cut Tape 1,517 1
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    Avnet Abacus 352210MJT 16 Weeks 4,000
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    Chip1Stop 352210MJT Cut Tape 3,905
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    Master Electronics 352210MJT
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    Riedon HVS2512-10MJ1

    RES SMD 10M OHM 5% 1W 2512
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    DigiKey HVS2512-10MJ1 Digi-Reel 988 1
    • 1 $5.9
    • 10 $3.835
    • 100 $2.7903
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    HVS2512-10MJ1 Cut Tape 988 1
    • 1 $5.9
    • 10 $3.835
    • 100 $2.7903
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    HVS2512-10MJ1 Reel 1,000
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    Vishay Sfernice CS22-10MJ

    RES THIN FILM WIREBONABLE
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    DigiKey CS22-10MJ Tray 100
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    Vishay Intertechnologies CS22-10MJ

    Wirebondable Thin Film Chip Resistor 10M Ohm 5% 0.05 W ?100 ppm/?C 2-Pin SMD - Waffle Pack (Alt: CS22-10MJ)
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    Avnet Americas CS22-10MJ Waffle Pack 23 Weeks 100
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    210MJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN638S

    Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original
    PDF infringement0718 H1-C01EC0-0110015TA MN638S STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M

    alternator rectifier diode 50a

    Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
    Text: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original
    PDF C01EA0 H1-C01EA0-9906015TA alternator rectifier diode 50a EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h

    IF9120

    Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
    Text: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model


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    PDF IRFU9120, IRFR9120 O-251AA IRFU9120 IRFR9120 235e-12 1e-30 01e-3 05e-6) IF9120 IRFR91209A kp158 623E3 4411E

    IF9120

    Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
    Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field


    Original
    PDF IRFR9120, IRFU9120 TA17501. IF9120 TA17501 IRFR9120 IRFR91209A IRFU9120 TB334

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


    Original
    PDF ISO-9001 IRFT001

    STA508A

    Abstract: STA509A 2sd2141 2sd2382 2sc3852 STA463C STA415A fn812 SDC09 smd 18w
    Text: Transistors and MOS FETs Transistors and MOS FETs by Application Application Page Igniters 2SD2141 58 57 Injectors 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 AT Automatic Transmissions 2SA1488 2SA1488A 50 52 Cruise controls 2SA1568 2SC4065 SLA8004 2SA1567


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    PDF 2SD2141 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 2SA1488 2SA1488A 2SA1568 STA509A 2sc3852 STA415A fn812 smd 18w

    NTE2981

    Abstract: No abstract text available
    Text: NTE2981 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V)


    Original
    PDF NTE2981 NTE2981

    IF9120

    Abstract: IRFR9120 irfu9120 IRFR91209A TB334 4411E
    Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs January 2002 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are


    Original
    PDF IRFR9120, IRFU9120 TA17501. IF9120 IRFR9120 irfu9120 IRFR91209A TB334 4411E

    IRFT001

    Abstract: 3001 transistor Q1/HXTR-3001
    Text: M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


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    PDF IRFT001 3001 transistor Q1/HXTR-3001

    dual Solenoid Driver

    Abstract: ZXMS6006DT8TA 6006D
    Text: A Product Line of Diodes Incorporated ZXMS6006DT8 ADVANCE INFORMATION 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • •


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    PDF ZXMS6006DT8 210mJ AEC-Q101 DS35143 dual Solenoid Driver ZXMS6006DT8TA 6006D

    MSK3001

    Abstract: N CHANNEL 250A SINGLE PHASE POWER MOSFET IRFT001 3001 transistor
    Text: M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


    Original
    PDF IRFT001 MSK3001 N CHANNEL 250A SINGLE PHASE POWER MOSFET IRFT001 3001 transistor

    4411E

    Abstract: IF9120
    Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs July 1999 3987.4 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are


    Original
    PDF IRFR9120, IRFU9120 TA17501. 4411E IF9120

    SPF0001

    Abstract: sta464c MN638S sta509a sanken S-60W STA464 SLA5027
    Text: Transistors and MOS FETs Index by Load Load Current Approx. 0.5A Approx. 1.2A Approx. 3A Approx. 5A 10A and over Part No. Chip Single Package Avalanche Diode TO220F TO220S Multi-chip Package SPF SD Surface-mount (Surface-mount) STA SMA SLA Remarks 2SA1488A


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    PDF O220F O220S 210mJ 200mJ 150mJ 2SA1488A 2SC3851 2SC3852 SPF0001 sta464c MN638S sta509a sanken S-60W STA464 SLA5027

    IRFT001

    Abstract: ic power mosfet 100V 57A MSK3001
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


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    PDF ISO-9001 IRFT001 IRFT001 ic power mosfet 100V 57A MSK3001

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6005DT8 Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • • • Continuos Drain Source Voltage On-State Resistance Nominal Load Current VIN = 5V 60V 200mΩ 1.8A •


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    PDF ZXMS6005DT8 210mJ ZXMS6005DT8 DS32248

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact Dual Package • • On-State Resistance Nominal Load Current VIN = 5V


    Original
    PDF ZXMS6005DT8Q ZXMS6005DT8Q 210mJ DS37136

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6006DT8 ADV AN CE I N FORM AT I ON 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ


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    PDF ZXMS6006DT8 210mJ ZXMS6006DT8 DS35143

    2am smd transistor

    Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
    Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels


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    PDF SI-5155S O-220 Rati03S SPX-62S SI-3011S SPX-G32S SI-3101S SPZ-G36 SI-3102S SSB-14 2am smd transistor transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a

    nte2981

    Abstract: No abstract text available
    Text: NTE2981 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID


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    PDF NTE2981 00A/s, nte2981

    Untitled

    Abstract: No abstract text available
    Text: NTE2981 Logic Level MOSFET N - Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V)


    Original
    PDF NTE2981

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZXMS6005DT8 ADVANCE INFORMATION 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • Continuos drain source voltage 60V  Compact Dual Package 


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    PDF ZXMS6005DT8 210mJ AEC-Q101 DS32248

    IRFR9120

    Abstract: p-channel pspice model IF9120 TA17501 123E5
    Text: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    OCR Scan
    PDF IRFR9120 IRFU9120 IRFR9120 1e-30 05e-6) 23o-3 23e-5) 05e-3 35e-5) p-channel pspice model IF9120 TA17501 123E5