210NS Search Results

658512

Contextual Info: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)

Contextual Info: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)

Contextual Info: 3A 600A 210ns FRD Type: 30PRA60 30PRA60 OUTLINE DRAWING FEATURES * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g

TGM-210NS

Contextual Info: RoHS AT06C10I T1/E1/CEPT ISOLATION TRANSFORMER 2Kvrms Isolation module Ideal for DC/DC Converter Applications Operating Temperature Range: -40ºC to +115ºC TGM-210NS-RLTR Compliant to IEEE802.3 Primary AT06C10I 100KHz 0.1V 100KHz 0.2V 960 0.50 2CT:1CT @60hz, 1mA

30PRA60

Contextual Info: 3A 600V 210ns FRD Type: 30PRA60 30PRA60 OUTLINE DRAWING FEATURES * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g

Contextual Info: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss

30PRA40

Contextual Info: 3A 400A 210ns FRD Type: 30PRA40 30PRA40 OUTLINE DRAWING FEATURES * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g

G12N60C3D

Abstract: TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 HGTG12N60C3D g12n60c3 G12N60
Contextual Info: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features • • • • • Package o 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating

Contextual Info: 3A 400V 210ns FRD Type: 30PRA40 30PRA40 OUTLINE DRAWING FEATURES * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g

TGM-210NS

Abstract: TGM-210NS-RLTR TGM-210NSRL TGM-210
Contextual Info: RoHS AT06C10I T1/E1/CEPT ISOLATION TRANSFORMER 2Kvrms Isolation module Ideal for DC/DC Converter Applications Operating Temperature Range: -40ºC to +115ºC TGM-210NS-RLTR Compliant to IEEE802.3 100% Tested for 2KV Hi-Pot Primary AT06C10I 100KHz 0.1V 100KHz 0.2V

M7707

Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Contextual Info: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone

Contextual Info: ISO1050 www.ti.com SLLS983H – JUNE 2009 – REVISED JUNE 2013 ISOLATED CAN TRANSCEIVER Check for Samples: ISO1050 FEATURES 1 • • • • • • • • • • • • Meets the Requirements of ISO11898-2 5000-VRMS Isolation ISO1050DW 2500-VRMS Isolation (ISO1050DUB)

sb820m

Abstract: sb850 SB800 AMD SATA 4390h Southbridge AMD Athlon II X4 a link express amd SB800 southbridge sb800 4392H
Contextual Info: AMD SB800-Series Southbridges Register Reference Guide Publication # 45482 Revision: 3.04 Issue Date: May 2011 Advanced Micro Devices 2011 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced

Contextual Info: H D 6 3 0 1 V 1 , H D 6 3 A 0 1 V 1 , -H D 6 3 B01 V I C M O S M C U M icrocom puter Unit T h e HD6301V1 is an 8-bit CMOS single-chip m icrocom ­ p u te r unit, O bject Code com patible w ith th e H D6801. 4kB ROM, 128 b y tes RAM, Serial C om m unication Interface (SCI),

ADV7343BSTZ2

Abstract: EIA770-3 PAL to ITU-R BT.601/656 Decoder T-1004
Contextual Info: Multiformat Video Encoder Six, 11-Bit, 297 MHz DACs ADV7342/ADV7343 FEATURES EIA/CEA-861B compliance support Programmable features Luma and chroma filter responses Vertical blanking interval VBI Subcarrier frequency (FSC) and phase Luma delay Copy generation management system (CGMS)

B3 0F

Abstract: M65580MAP-XXXFP M37272MA 16X26 MV180
Contextual Info: お客様各位 資料中の「三菱電機」 「三菱XX」等名称の株式会社ルネサス テクノロジへの変更について 2003年4月1日を以って株式会社日立製作所及び三菱電機株式会社のマイコン、ロジック、

g12n60c3d

Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123
Contextual Info: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

TC524258AZ

Contextual Info: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG100Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG75Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

CSB503F30

Abstract: TA8867BN
Contextual Info: TOSHIBA _ TA8867BN TENTATIVE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8867BN VIDEO, CHROMA, AND SYNC. SIGNAL PROCESSING IC FOR PAL/NTSC-SYSTEM COLOR TELEVISIONS. The TA8867BN is Video, Chroma, and Sync. Signal

Contextual Info: Supertex inc. HV9989 Three-Channel CCM/DCM Boost LED Driver with Sub-Microsecond PWM Dimming Features ►► Three out-of-phase constant-current boost converters ►► Current loop closed with submicrosecond PWM dimming pulses supports PWM dimming >20kHz

Contextual Info: November 1991 Edition3.0 FUJITSU DATA SHEET M B 8 1 4 4 0 0 -80•/-1o/-12 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400 features a fa st page" mode of

Contextual Info: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1