TA49123 Search Results

p12n60c3

Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123
Contextual Info: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

g12n60c3d

Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123
Contextual Info: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

TG12N60C3D

Abstract: g12n60c3d TG12N60 g12n G12N60
Contextual Info: HGTG12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .

12n60c3

Abstract: 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS interrii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

12n60c3d

Abstract: IGBT 12n60c3D
Contextual Info: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis­

P12N60C3

Abstract: HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60
Contextual Info: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Semiconductor 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the

Contextual Info: HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

p12n60c3

Abstract: S12N60C3 RHRP1560 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C
Contextual Info: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the

2n60c3

Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
Contextual Info: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, HGT1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices

12n60c3d

Abstract: TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar

12N60C3

Abstract: 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

TA49188

Abstract: 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar

p12n60c3

Abstract: TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 HGTP12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A
Contextual Info: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

Contextual Info: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

p12n60c3

Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
Contextual Info: HARRIS HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the

Contextual Info: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT August 1995 Features Packages JEDEC TO-220AB EMITTER COLLECTOR GATE • 24A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC

p12n60c3

Abstract: p12n60 HGTP12N60C3 S12N60C3 TA49123 HGT1S12N60C3S HGT1S12N60C3S9A LD26 RHRP1560
Contextual Info: HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

p12n60c3

Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123
Contextual Info: i n t e HGTP12N60C3, HGT1S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

Contextual Info: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

g12n60c3d

Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C
Contextual Info: HGTG12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

P12N60C3

Abstract: P12N60C C110 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 S12N60C3 TA49123 transistor bI 240
Contextual Info: HARRIS HGTP12N60C3, HGT1S12N60C3, S E M , HGT1S12N60C3S C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT October 1996 Features Description • 24A, 600V at Tc = 25°C The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the

G12N60C3D

Abstract: TA49123 G12N60 G12N60C G12N60C3 HGTG12N60C3D RHRP1560 TA49061
Contextual Info: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

G12N60C3D

Abstract: TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 HGTG12N60C3D g12n60c3 G12N60
Contextual Info: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features • • • • • Package o 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating