2133MBPS Search Results

Contextual Info: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for

E1751E20

Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
Contextual Info: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features

Contextual Info: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for

NT5CB64M16DP

Abstract: nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m
Contextual Info: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EI* -FK* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) (DDR3-2133-CL13) Units

Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

K4B2G1646C-HCH9

Abstract: K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133
Contextual Info: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB128m16FP

Abstract: nt5cb256m8fn NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F
Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe

K4W2G1646E-BC11

Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
Contextual Info: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

2310 dhi

Abstract: NT5CB64M16DP nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14
Contextual Info: 1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8 CL10 CL12 CL13 Units Min. Max.

NT5CB128M16FP

Abstract: NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN
Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

GDDR5

Abstract: 96FBGA POD-15 SSTL-15 96-FBGA 170FBGA GDDR3 SDRAM 256Mb 170-FBGA 100-FBGA 136FBGA
Contextual Info: Jul.2010 Graphics Code Information Component K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory K 11. "─“ 2. DRAM : 4 12. Package - gDDR2 H : 84FBGA (Halogen Free & Lead Free) B : 84FBGA (Halogen Free & Lead Free & Flip Chip)

k4g10325fe-hc04

Abstract: samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung
Contextual Info: Jul. 2010 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

K4B1G1646G-BCK0

Abstract: K4B1G1646G-BCH9 K4B1G1646G-BCF8 K4B1G1646G K4B1G1646G-BCNB k4b1g1646g-bch K4B1G1646GBCH9 K4B1G1646G-BCMA K4B1G1646G-BCF DDR3-2133
Contextual Info: Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4W1G1646G-BC11

Abstract: K4W1G1646G-BC12 470 AP 02
Contextual Info: Rev. 1.0, Nov. 2010 K4W1G1646G 1Gb G-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: COVER DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG 256M words x 8 bits EDJ2116DEBG (128M words × 16 bits) Specifications Features • Density: 2G bits • Organization — 32M words × 8 bits × 8 banks (EDJ2108DEBG) — 16M words × 16 bits × 8 banks (EDJ2116DEBG)

Contextual Info: Speedster22i DDR Controller User Guide UG031 – April 15, 2013 UG031, April 15, 2013 1 Copyright Info Copyright 2013 Achronix Semiconductor Corporation. All rights reserved. Achronix is a trademark and Speedster is a registered trademark of Achronix Semiconductor Corporation.

NT5CB64M16DP

Abstract: nt5cb64m16 NT5CB64M16DP-DH NT5CB128M8DN-CFI NT5CC64M16DP NT5C NT5CC128M8DN DDR3 pin out NT5CB64M16D NT5CB64
Contextual Info: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8

K4B1G1646G-BCK0

Abstract: K4B1G1646G-BCH9 K4B1G1646G-BCMA K4B1G1646G-BCN
Contextual Info: Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB64M16FP-DH

Abstract: NT5CB64M16FP nt5cb64m16 NT5CB128M8FN-DH NT5CC64M16FP NT5CB128M8FN NT5CB64M1
Contextual Info: 1Gb DDR3 F-die SDRAM NT5CB128M8FN/NT5CB64M16FP NT5CC128M8FN/NT5CC64M16FP Preliminary Feature Table 1: CAS Latency Frequency Speed Bins -DH/DHI* -EJ* -FK* DDR3/L-1600 DDR3-1866 DDR3-2133 CL10 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK Avg.

NT5CB128M16FP-DI

Abstract: NT5CC128M16FP-DI NT5CB128M16FP-DII NT5CB256M8FN-DI NT5CC256M8FN-DI NT5CB128M16FP-EJ NT5CB128M16FP nt5cb128m16 NT5CB128 NT5CC128M-16FP-DI
Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

Contextual Info: 1Gb DDR3 F-die SDRAM NT5CB128M8FN / NT5CB64M16FP NT5CC128M8FN / NT5CC64M16FP Feature   Differential bidirectional data strobe  Write Leveling  OCD Calibration Backward compatible to VDD= VDDQ= 1.5V  Dynamic ODT Rtt_Nom & Rtt_WR ±0.075V 

NT5CC128M16FP-DII

Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe

NT5CB128M8FN

Abstract: NT5CB64M16FP-EK NT5CB64M16FP-DH NT5CB64M16FP
Contextual Info: 1Gb DDR3 F-die SDRAM NT5CB128M8FN / NT5CB64M16FP NT5CC128M8FN / NT5CC64M16FP Feature   8n-bit prefetch architecture  Output Driver Impedance Control  Differential bidirectional data strobe Backward compatible to VDD= VDDQ= 1.5V  Write Leveling

EDJ2116DEBG-DJ-F

Abstract: EDJ2116DEBG EDJ2108DEBG-GN-F EDJ2108DEBG DDR3-2133L EDJ2116DEBG-GN-F 2133M
Contextual Info: COVER DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG 256M words x 8 bits EDJ2116DEBG (128M words × 16 bits) Specifications Features • Density: 2G bits • Organization — 32M words × 8 bits × 8 banks (EDJ2108DEBG) — 16M words × 16 bits × 8 banks (EDJ2116DEBG)