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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology


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    PDF Am29F040B Am29F040

    AM29F040B

    Abstract: No abstract text available
    Text: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology


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    PDF Am29F040B Am29F040 twHwi-12-

    AM29F040B

    Abstract: No abstract text available
    Text: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology


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    PDF Am29F040B Am29F040 AM29F040B

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    Abstract: No abstract text available
    Text: M OTOROLA Order this document by MGRB2025CT/D SEMICONDUCTOR TECHNICAL DATA Advance Information MGRB2025CT Pow er Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features:


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    PDF MGRB2025CT/D MGRB2025CT 2PHX34744R 21445B

    29f040b

    Abstract: No abstract text available
    Text: PRELIMINARY AMDZ1 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — M inimizes system level power requirem ents ■ M anufactured on 0.35 pm process technology


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    PDF Am29F040B 29F040 32-pin AM29F040B 29F040B 29f040b

    29f040b

    Abstract: No abstract text available
    Text: ?'RE ! AM DB A m 29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics H 5.0 V ± 10% for read and write operations — Minimizes system level power requirements • Manufactured on 0.35 Jim process technology


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    PDF 29F040B Am29F040 Am29F040B