21445B Search Results

AM29F040B

Contextual Info: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology

AM29F040B

Contextual Info: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology

Contextual Info: M OTOROLA Order this document by MGRB2025CT/D SEMICONDUCTOR TECHNICAL DATA Advance Information MGRB2025CT Pow er Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features:

29f040b

Contextual Info: PRELIMINARY AMDZ1 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — M inimizes system level power requirem ents ■ M anufactured on 0.35 pm process technology

29f040b

Contextual Info: ?'RE ! AM DB A m 29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics H 5.0 V ± 10% for read and write operations — Minimizes system level power requirements • Manufactured on 0.35 Jim process technology

Contextual Info: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology