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    2222 TRANSISTOR NPN Search Results

    2222 TRANSISTOR NPN Result Highlights (1)

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    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    2222 TRANSISTOR NPN Datasheets Context Search

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    ic pt 2223

    Abstract: UNR2223 UNR2221 UNR2222 UNR2224
    Text: Transistors with built-in Resistor UNR2221/2222/2223/2224 UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 For digital circuits 1.5 –0.05 0.65±0.15 +0.1 +0.2 1.45 3 0.4 –0.05 2.9 –0.05 1 0.95


    Original     		PDF UNR2221/2222/2223/2224 UN2221/2222/2223/2224) ic pt 2223 UNR2223 UNR2221 UNR2222 UNR2224

    ic pt 2223

    Abstract: ic pt 2222 UN2224 UNR2223 UN2221 UN2222 UN2223 UNR2221 UNR2222 UNR2224
    Text: Transistors with built-in Resistor UNR2221/2222/2223/2224 UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor Unit : mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		PDF UNR2221/2222/2223/2224 UN2221/2222/2223/2224) UNR2221 UNR2222 UNR2223 UNR2224 ic pt 2223 ic pt 2222 UN2224 UNR2223 UN2221 UN2222 UN2223 UNR2221 UNR2222 UNR2224

    npn 2222 transistor

    Abstract: 2222 NPN Transistor 2222 npn 2222 Q68000-A8330
    Text: NPN Silicon Switching Transistor SXT 2222 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings


    Original     		PDF Q68000-A8330 OT-89 npn 2222 transistor 2222 NPN Transistor 2222 npn 2222 Q68000-A8330

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP 2907a
    Text: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


    Original     		PDF 2N2907 2N2907A 500mA, 150mA, 100MHz 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP 2907a

    2907 TRANSISTOR PNP

    Abstract: 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


    Original     		PDF 2N2907 2N2907A 150mA, 500mA, 100MHz 2907 TRANSISTOR PNP 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP 2907A transistor 2222a npn 2907A 2907a transistor transistor 2907 2N2907 PNP Transistor to 92 2907 ST 2222
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


    Original     		PDF 2N2907 2N2907A 150mA, 500mA, 100MHz 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP 2907A transistor 2222a npn 2907A 2907a transistor transistor 2907 2N2907 PNP Transistor to 92 2907 ST 2222

    ic pt 2223

    Abstract: ic pt 2222 npn 2222 transistor UN2224 UN2221 UN2222 UN2223 DSA003713 Pt 2222
    Text: Transistors with built-in Resistor UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 Costs can be reduced through downsizing of the equipment and reduction of the number of parts.


    Original     		PDF UN2221/2222/2223/2224 ic pt 2223 ic pt 2222 npn 2222 transistor UN2224 UN2221 UN2222 UN2223 DSA003713 Pt 2222

    PN2222

    Abstract: 2222 A to92 transistor 2222
    Text: PN2222 PN2222 General Purpose Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO VEBO Collector-Emitter Voltage


    Original     		PDF PN2222 PN2222 O-92-3 AN-2001: AN-2001 PN2222BU PN2222TA PN2222TAR PN2222TF 2222 A to92 transistor 2222

    TRANSISTOR ML6

    Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain


    Original     		PDF BFQ270 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor

    MBB754

    Abstract: BFG198 npn 2222 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


    Original     		PDF BFG198 OT223 MSB002 OT223. MBB754 BFG198 npn 2222 transistor

    EHP00

    Abstract: marking 2P
    Text: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8330 OT-89 EHP00 marking 2P

    JS301

    Abstract: transistor 2222a sot 89 Q68000-A8330 2222A PMDC transistor marking code 7C transistor 2222a SXT2222A
    Text: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel P in t tonfigu ation 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E


    OCR Scan     		PDF VPS05162 Q68000-A8330 OT-89 53SbGS EHP00890 BE35LÃ JS301 transistor 2222a sot 89 2222A PMDC transistor marking code 7C transistor 2222a SXT2222A

    2N2221

    Abstract: 2N2222 MMCF2221 MMCF2221A MMCF2222 MMCF2222A MMCF2906 MMCF2907 MCF2221
    Text: MMCF2221, MMCF2221A SILICON MMCF2222, MMCF2222A FLIP-CHIP NPN SWITCH AND A M P L IF IE R TRAN SISTO RS Flip-Chip — General purpose MPN switching and amplifier transistor fam ily similar to the 2N2221,A and 2N 2222,A devices. Primary Electrical Features:


    OCR Scan     		PDF MMCF2221, MMCF2221A MMCF2222, MMCF2222A 2N2221 2N2222 MMCF2906 MMCF2907, MCF2221 MMCF2222 MMCF2221 MMCF2221A MMCF2222A MMCF2907

    Untitled

    Abstract: No abstract text available
    Text: Ö23b32ü 0017300 1 32E D ISIP NPN Silicon Switching Transistor SXT 2222 A SIEMENS/ SPCLi SEMICONDS r - s s '- if • High current gain: 0.1 to 50 0 m A • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e fo r v e rs io n s in b u lk


    OCR Scan     		PDF 23b32Ã 23b320 Q017312

    smd transistor l32

    Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
    Text: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter


    OCR Scan     		PDF BLV945B OT324 OT324 7110fl2fc. OT324. ocn23ia smd transistor l32 SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27

    TRANSISTOR ML6

    Abstract: No abstract text available
    Text: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures


    OCR Scan     		PDF bb53T31 BFQ270 OT172A1 TRANSISTOR ML6

    NT 407 F TRANSISTOR

    Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
    Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.


    OCR Scan     		PDF BFG198 OT223 MS8002 OT223. NT 407 F TRANSISTOR Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor

    TRANSISTOR ML6

    Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240
    Text: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures


    OCR Scan     		PDF DD3177E BFQ270 OT172A1 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240

    MB87S

    Abstract: No abstract text available
    Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.


    OCR Scan     		PDF bbS3R31 BFG198 OT223 MB87S

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b 'lE • D bbS3T31 D D E ^ D ll L APX T IE BLV36 VHF LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is primarily intended for use in linear VHF television transmitters and transposers vision or


    OCR Scan     		PDF bbS3T31 BLV36

    BFG134

    Abstract: BJE 247
    Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for


    OCR Scan     		PDF 3131S BFG134 OT103 OT103. BFG134 BJE 247

    BFG35

    Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


    OCR Scan     		PDF BFG35 OT223 OT223. MSA035 TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570

    BFG134

    Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
    Text: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for


    OCR Scan     		PDF BFG134 BFG134 bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379

    2322-712

    Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
    Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for


    OCR Scan     		PDF OT103 33-OS BFG134 Q04S2014 OT103. 2322-712 BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor