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    23C32000A Search Results

    23C32000A Datasheets Context Search

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    23C32000a

    Abstract: ICX 639 23c3200
    Contextual Info: 23C32000A LG Semicon Co.,Ltd. 2,097,152 x 16 BIT CMOS MASK ROM Pin Configuration Description 42 DIP The G M 23C32000A high performance read only memory is organized as 2,097,152 x 16 bits and has an access time o f 120/150ns. It needs no external control clock to assure simple operation, because of


    OCR Scan     		GM23C32000A 120/150ns. 23C32000A GM23C32000A 120/150ns ICX 639 23c3200 PDF

    23C32000

    Contextual Info: 23C32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)


    OCR Scan     		KM23C32000AG 32M-BH 120ns 32000AG P-600 23C32000AG 304x8bit 152x16bit 0D313SQ 23C32000 PDF

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


    OCR Scan     		23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B PDF