Untitled
Abstract: No abstract text available
Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V4100D
512Kx8
/256x16)
100ns
120ns
44-TSOP2-400
44-TSOP2-400)
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KM23V4100D
Abstract: KM23V4100DG 40DIP600 40-DIP-600
Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V4100D
512Kx8
/256Kx16)
100ns
120ns
KM23V4100D
40-DIP-600
KM23V4100DG
40-SOP-525
KM23V4100DG
40DIP600
40-DIP-600
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Untitled
Abstract: No abstract text available
Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V4100D
512Kx8
/256Kx16)
100ns
120ns
KM23V4100D
40-DIP-600
KM23V4100DG
40-SOP-525
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KM23V4100D
Abstract: KM23V4100DET KM23V4100DT
Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V4100D
512Kx8
/256x16)
100ns
120ns
44-TSOP2-400
KM23V4100DET
KM23V4100DT
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KM23V4100D
Abstract: KM23V4100DG
Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V4100D
512Kx8
/256Kx16)
100ns
120ns
KM23V4100D
40-DIP-600
KM23V4100DG
40-SOP-525
KM23V4100DG
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KM23V4100D
Abstract: KM23V4100DET KM23V4100DT 256x16 rom
Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V4100D
512Kx8
/256x16)
100ns
120ns
44-TSOP2-400
KM23V4100DET
KM23V4100DT
256x16 rom
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Untitled
Abstract: No abstract text available
Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V4100D
512Kx8
/256Kx16)
100ns
120ns
KM23V4100D
40-DIP-600
KM23V41000G
40-50P-525
KM23V41
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KM23V4100C
Abstract: KM-23V4100CG
Text: KM23V4100C G/T ci cr*1 ELECTRONICS CMOS Mask ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Supply voltage : 2.7V to 3.6V • Fast access time 3.0V Operation: 150ns(max.)
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KM23V4100C
8/256K
150ns
120ns
KM23V4100C
40-DIP-600
KM23V4100CG
-SOP-525
KM23V4100CT
44-TSOP2-400
KM-23V4100CG
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KM23C16005AG
Abstract: 44TSOP2 44-TSOP2
Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16
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KM23C4000C
KM23C4100C
KM23C410OCET
KM23C4200C
512Kx
512Kx8/256Kx16
512Kx8/256Kx16
KM23C16005AG
44TSOP2
44-TSOP2
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Untitled
Abstract: No abstract text available
Text: KM23V41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V41
512Kx8
/256Kx16)
100ns
120ns
23V4100D
40-DIP-600
23V4100DG
40-SO
P-525
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Untitled
Abstract: No abstract text available
Text: KM23V4100D E T 4M-Bit (5 1 2 K X 8 /2 5 6 x 1 6 ) CMOS MASK ROM CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switehabte organization 524,288 x 8(byte mode) 262,144 x 16{word mode) • Fast access tine 3.3V Operation: 100ns(Max.) 3.0V Operation: 120ns(Max.)
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KM23V4100D
100ns
120ns
44-TSOP2-4QO
100pF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23V41 OOB FP CMOS MASK ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 150ns(max.) • Supply voltage: single+3.0V or +3.3V
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KM23V41
8/256K
150ns
40-pin,
600mil,
23V4100B
KM23V4100B)
KM23V4100BFP)
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23V4100DG
Abstract: 40-SO
Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V4100D
512Kx8
256Kx16)
100ns
120ns
KM23V4100D
40-DIP-600
23V4100DG
40-SO
P-525
23V4100DG
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Untitled
Abstract: No abstract text available
Text: S A M S UN G E L E C T R O N I C S b?E D INC • 7^4142 Q D 1 7 Q 1 7 bSb « S P I C K PRELIMINARY CMOS MASK ROM KM23V41 OOB FP 4M-Bit (512K X8/256K x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16 (word mode)
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KM23V41
X8/256K
150ns
40-pin,
600mil,
KM23V4100B
KM23V4100B)
KM23V4100BFP)
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|
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64Kx4
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
64Kx8
256KX4
KM428C64
uPD23C4000
93c46 atmel
sony Cross Reference
atmel 93c66
HN62404P
93C46L
rom at29c010
Hitachi SRAM cross reference
x2864a
UPD23C2000
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
KM428C64
KM424C256
KM424C256A
TC524256
TC55B4257
93C46L
UPD23C4000
atmel 93c66
KM628512
Hitachi SRAM cross reference
atmel 93c57
TC55B465
upd23c8000
93c56v
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16
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KM23C4000D
KM23C4100D
KM23C41
KM23V64000T.
KM23V64005AG
KM23V64005ATY.
KM23V64205ASG
KM23SV32205T
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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KM23C8001
Abstract: 32-sop
Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E
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KM23C256
KM23C512
KC23C1000
KM23C1001
KM23C1010
KM23C1010J
KM23C1011
32Kx8
128Kx
256KX
KM23C8001
32-sop
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48TSOP1
Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15
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512KX8
KM23C400QD
KM23C4QOOD
KM23C4Q00D
KM23C40QQD
TY-10
KM23C4000D
7Y-12
KM23V4000D
48TSOP1
MX* 64M-Bit eprom
TY15
km23c32000cg-10
23v322
KM23C16205BSG-10
7Y12
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