24733 Search Results

Contextual Info: 5 THIS DRAW ING IS U N PU BLISH ED. RELEASED FOR ALL COPYRIGHT BY TYCO ELECTRON ICS PU BLICATIO N RIGHTS - 4 2 3 REV ISI ONS ,- RESERVED. AG C O R PO R A T IO N. 53 LTR DESCRIPTIO N G2 /K ECO —07 —0 05 547 MATERIAL: HOUSING - THERMOPLASTIC U L 9 4 CENT ACT - PHESPHER BRENZE,

816B

Abstract: marking 817B 839B 819b 830B MOTOROLA 815b 836b zener
Contextual Info: MOTOROLA Order this document by 1SMA5913BT3/D SEMICONDUCTOR TECHNICAL DATA 1SMA5913BT3 through 1SMA5945BT3 1.5 Watt Plastic Surface Mount Silicon Zener Diodes PLASTIC SU RFACE MOUNT ZENER DIODES 1.5 WATTS 3.3-68 VOLTS This com plete new line of 1.5 Watt Zener Diodes offers the following

bzx 850

Abstract: bzx 850 30
Contextual Info: CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses

merlin gerin C60H

Abstract: 25013 Merlin Gerin 25115 Merlin C60H 24703 merlin gerin 25085 24981 C60H 947.2 24986
Contextual Info: Защита цепей 10000 МЭК 898 15 кA МЭК 947.2 ГОСТ P 50345-99 C60H Автоматические выключатели Кpивые B, C и D Кол-во полюсов 1 2 3 4 12 Кол-во модулей Ш = 9 мм 2 4 6 8 Ном. ток

epcos 565-2

Abstract: B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57540 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B57550G0103F000

Abstract: 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57550 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

merlin gerin NS100N

Abstract: merlin gerin catalogue Merlin Gerin shunt trip mx merlin gerin C60 multi 9 Merlin Gerin ns160n merlin gerin C60n Merlin Gerin CIRCUIT BREAKER merlin gerin NS250h C60H Circuit Breakers Catalogue merlin gerin C60n - 24338
Contextual Info: Catalogue 2004 Merlin Gerin Miniature circuit-breakers and earth leakage circuit-breakers MCBs/ELCBs contents page Miniature circuit-breakers RCCB / ELCB Technical information Mini pragma din kit Merlin Gerin C60a 2 C60N 3 C60H 4 C60N UL489 - DC circuit breaker

CY7C1422AV18

Abstract: CY7C1423AV18 CY7C1424AV18 CY7C1429AV18
Contextual Info: CY7C1422AV18, CY7C1429AV18 CY7C1423AV18, CY7C1424AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency

CY7C1416AV18

Abstract: CY7C1418AV18 CY7C1420AV18 CY7C1427AV18
Contextual Info: CY7C1416AV18 CY7C1427AV18 CY7C1418AV18 CY7C1420AV18 PRELIMINARY 36-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 250-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency

Contextual Info: ԃൔҞᒵ! ൘ǵठިܿൔ֋ਜǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾ 2! ມǵϦљᙁϟǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾ 4! 㡋ǵϦљ‫ݯ‬౛ൔ֋! ! ΋ǵಔᙃ‫س‬಍ǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾǾ! 8! Βǵဠ٣ǵᅱჸΓǵᕴ࿶౛ǵୋᕴ࿶౛ǵ‫ڐ‬౛ǵӚ೽ߐϷϩЍᐒᄬЬᆅ

Contextual Info: CY7C1422AV18 CY7C1429AV18 CY7C1423AV18 CY7C1424AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency

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Contextual Info: CY7C1411AV18 CY7C1413AV18 CY7C1415AV18 PRELIMINARY 36-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth

CY7C1428AV18-250BZC

Contextual Info: CY7C1417AV18 CY7C1428AV18 CY7C1419AV18 CY7C1421AV18 36-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 300-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency

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Abstract: 25091 e8 sot223 24446
Contextual Info: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 47 DS1869 A3 SEP '99 24445 9907 NSEB DJ824247ABA SOIC

Hyundai 9944

Abstract: nseb ds1000m-100 DS2165Q
Contextual Info: RELIABILITY MONITOR DS1000M-100 OCT '99 MONITOR DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1000 E3 DIP 300 CPS ChipPac, C 9944 PROCESS Single Poly, Single Metal DH927108AJC 8 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60% Ea: 0.7

RFID Entry Door Lock Access Control System

Abstract: TRELLEBORG TIRIS glass Transponder how to make ic copier Automatic Railway Gate Control system, ULTRASONIC parking system Car security system seminar RFID Proximity Entry Door Lock Access Control System Automated Guided Vehicles NISSAN
Contextual Info: INTERNATIONAL NEWSLETTER OF THE TI RFID GROUP ISSUE NO. 20, 2000 Baggage Direct –Uses Tag-it The World’s First RFID-based Baggage Delivery System aggage Direct took off at Heathrow Airport on July 27th. Developed by systems integrator KTP Ltd using Texas

Contextual Info: CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses

Contextual Info: CY7C1418AV18 CY7C1420AV18 36 Mbit DDR II SRAM Two Word Burst Architecture Features Functional Description • 36 Mbit density 2M x 18, 1M x 36 ■ 300 MHz clock for high bandwidth ■ Two word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces 

Contextual Info: CY7C1422AV18, CY7C1429AV18 CY7C1423AV18, CY7C1424AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M × 9, 2M × 18, 1M × 36 ■ 300 MHz clock for high bandwidth

RCA-CD4007

Abstract: ca3130 rca ca3130 ICAN-6080 IC1 CA3130 about the IC ca3130 advantages of astable multivibrator ica ca3130 ca3130 equivalents DD1454
Contextual Info: w * G E SOLID STATE 01 0014543 4 0 1E 14243 3875081 G E SOLID STATE u p e r a iio n a i « m p in ic r « , CA3130A, CA3130 BiMOS Operational Amplifiers With MOSFET Input/CMOS Output Features: • MOSFET Input stage provides: very high Z,=1.S TCI 1.5 x 10'2C1 typ.

Contextual Info: CY7C1422AV18 CY7C1423AV18 CY7C1424AV18 PRELIMINARY 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency

LH5160N

Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
Contextual Info: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.

DS1233 a5

Abstract: e8 sot223 9915 dallas 25010 DN819 densit DS1232L ds1232l datasheet DS1869 DK815282AAB
Contextual Info: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY DATE PRODUCT REV JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 45 DS1621 A7 SEP '99 24466 9930 ATP (Anam, PI) DK906731AAC SOIC

Contextual Info: Data Sheet March 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations T7697 3.3 V CEPT Seven-Channel Line Interface Features Description • Seven fully integrated CEPT transceivers The T7697 line-interface device, designed for use in CEPT/E1 applications, is an integrated sevenchannel analog transceiver that digitizes incoming