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    ADLINK Technology Inc MVP-6247T/M32G

    Industrial PCs i7-12700TE, R680E, 1xPCIe x16, 2xPCIe x4, 1x PCI, 2xDP,2x HDMI , 3x 2.5GbE, 1x GbE, 4xCOM, 4xUSB3Gen2, 2xUSB3Gen1, USB2 dongle, 8DI/8DO, 2xUSIM, TPM2.0, M.2(A,B,M), 2x2.5" SATA, 1x DDR5 32GB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MVP-6247T/M32G
    • 1 $2675.7
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    • 100 $2675.7
    • 1000 $2675.7
    • 10000 $2675.7
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    247TM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    35N120D1

    Abstract: D-68623 IXER 35N120D1
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


    Original     		PDF 35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1

    TO247AD

    Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
    Text: IXKR 40N60C CoolMOS Power MOSFET in 247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions


    Original     		PDF 40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247

    50n50

    Abstract: 55N50 150N50 IXFK55N50
    Text: VDSS HiPerFETTM Power MOSFETs 247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR


    Original     		PDF ISOPLUS247TM 50N50 55N50 247TM IXFK55N50 50N50 55N50 150N50

    35N120

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original     		PDF 247TM 35N120BD1 728B1 35N120

    Untitled

    Abstract: No abstract text available
    Text: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)


    Original     		PDF 21N100F 247TM 728B1

    80-006BR

    Abstract: No abstract text available
    Text: DSSK 80-006BR IFAV = 2x40 A VRRM = 60 V V F = 0.51 V Power Schottky Rectifier with common cathode VRSM VRRM V V 60 60 A Type C A ISOPLUS 247TM A DSSK 80-006BR C A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV


    Original     		PDF 80-006BR 247TM 80-006B 80-006BR

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 247TM 35N120BD1

    IXGJ50N60C4D1

    Abstract: G50N60
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IXGJ50N60C4D1 IC110 O-247TM E153432 IC110 IF110 50N60C4 0-06-11-A IXGJ50N60C4D1 G50N60

    ixys dsep

    Abstract: No abstract text available
    Text: DSEP 30-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 15 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V A Type C ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 30-06CR A = Anode, C = Cathode * Patent pending


    Original     		PDF 30-06CR 247TM ixys dsep

    Untitled

    Abstract: No abstract text available
    Text: IXFX 1806 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 500 V 53 A 90 mW trr £ 250 ns Preliminary data sheet Maximum Ratings PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500


    Original     		PDF 247TM

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTJ6N150 O-247TM E153432 100ms 6N150

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol


    Original     		PDF 21N100Q 21N100Q 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions


    Original     		PDF 90N20Q 90N20Q 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		PDF 21N100Q 247TM 125oC 728B1

    27n80q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q Q-CLASS VDSS ID25 RDS on trr £ 250 ns Single MOSFET Die PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C


    Original     		PDF 27N80Q 27N80Q 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		PDF 247TM 40N60BD1

    Untitled

    Abstract: No abstract text available
    Text: DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.68 V Power Schottky Rectifier dual diode VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5


    Original     		PDF 35-008AR 247TM

    Untitled

    Abstract: No abstract text available
    Text: IXFK 24N90Q IXFX 24N90Q HiPerFETTM Power MOSFETs Q-CLASS VDSS ID25 = = = RDS on Single MOSFET Die 900 V 24 A 0.45 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data sheet Symbol Test Conditions


    Original     		PDF 24N90Q 247TM

    dsei 30-10A

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A 1000 1000 Type C ISOPLUS 247TM TO-247 AD Version A Version AR V 1000 1000 DSEI 30-10A DSEI 30-10AR C C A A C (TAB) A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM


    Original     		PDF 247TM O-247 0-10A 30-10AR dsei 30-10A

    Untitled

    Abstract: No abstract text available
    Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol


    Original     		PDF 30N120 30N120 247TM E153432 IXDR30N120

    Untitled

    Abstract: No abstract text available
    Text: DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V = 30/35 ns trr with soft recovery VRSM VRRM V V 600 600 600 600 600 600 Type A C DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD ISOPLUS 247TM Version A Version BR C C


    Original     		PDF 0-06A 30-06BR 30-06B 30-06BR O-247 247TM

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFK 44N55Q IXFX 44N55Q HiPerFET TM Power MOSFETs VDSS ID25 RDS on Q-CLASS 550 V 44 A Ω 120 mΩ trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Symbol = = = PLUS 247TM (IXFX)


    Original     		PDF 44N55Q 247TM 728B1

    Untitled

    Abstract: No abstract text available
    Text: DSEK 60 Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 IFAVM = 2x 34 A VRRM = 200 V trr = 35 ns ISOPLUS 247TM TO-247 AD Type Version A A DSEK 60-02A DSEK 60-02AR C A Version AR A C A A C A C (TAB) TAB A = Anode, C = Cathode


    Original     		PDF 247TM O-247 0-02A 60-02AR

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		PDF 90N20Q 247TM 728B1