247TM Search Results

35N120D1

Abstract: D-68623 IXER 35N120D1
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C

TO247AD

Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in 247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions

50n50

Abstract: 55N50 150N50 IXFK55N50
Contextual Info: VDSS HiPerFETTM Power MOSFETs 247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR

35N120

Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20

Contextual Info: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)

80-006BR

Contextual Info: DSSK 80-006BR IFAV = 2x40 A VRRM = 60 V V F = 0.51 V Power Schottky Rectifier with common cathode VRSM VRRM V V 60 60 A Type C A ISOPLUS 247TM A DSSK 80-006BR C A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV

Contextual Info: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

IXGJ50N60C4D1

Abstract: G50N60
Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

ixys dsep

Contextual Info: DSEP 30-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 15 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V A Type C ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 30-06CR A = Anode, C = Cathode * Patent pending

Contextual Info: IXFX 1806 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 500 V 53 A 90 mW trr £ 250 ns Preliminary data sheet Maximum Ratings PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500

Contextual Info: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions

Contextual Info: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings

27n80q

Contextual Info: HiPerFETTM Power MOSFETs IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q Q-CLASS VDSS ID25 RDS on trr £ 250 ns Single MOSFET Die PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C

Contextual Info: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600

Contextual Info: DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.68 V Power Schottky Rectifier dual diode VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5

Contextual Info: IXFK 24N90Q IXFX 24N90Q HiPerFETTM Power MOSFETs Q-CLASS VDSS ID25 = = = RDS on Single MOSFET Die 900 V 24 A 0.45 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data sheet Symbol Test Conditions

dsei 30-10A

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A 1000 1000 Type C ISOPLUS 247TM TO-247 AD Version A Version AR V 1000 1000 DSEI 30-10A DSEI 30-10AR C C A A C (TAB) A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM

Contextual Info: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol

Contextual Info: DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V = 30/35 ns trr with soft recovery VRSM VRRM V V 600 600 600 600 600 600 Type A C DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD ISOPLUS 247TM Version A Version BR C C

Contextual Info: Advance Technical Information IXFK 44N55Q IXFX 44N55Q HiPerFET TM Power MOSFETs VDSS ID25 RDS on Q-CLASS 550 V 44 A Ω 120 mΩ trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Symbol = = = PLUS 247TM (IXFX)

Contextual Info: DSEK 60 Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 IFAVM = 2x 34 A VRRM = 200 V trr = 35 ns ISOPLUS 247TM TO-247 AD Type Version A A DSEK 60-02A DSEK 60-02AR C A Version AR A C A A C A C (TAB) TAB A = Anode, C = Cathode

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings