24NOV04 Search Results

Contextual Info: BAT54 / 54A / 54C / 54S Vishay Semiconductors Small Signal Schottky Diodes, Single & Dual Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as

AVR 32BIT

Abstract: AT90SC19264RC AT90SC6404RT CRC-16 ISO7816 SA10 SF10 TPG0053A trojan uv sim card cloning device
Contextual Info: General Business Use AT90SC6404RT Security Target Lite General Business Use TPG0053A 24 Nov 04 Atmel makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors

M40Z300W

Abstract: M41T315V M48T254V M68Z512W A1827
Contextual Info: M48T254V 3.3V, 16 Mbit 2Mb x 8bit TIMEKEEPER SRAM with Phantom Clock NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V ± 10% INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY AND CRYSTAL

17610

Abstract: IEC60068-2-43 IEC60068-2-42 SFH6745T SFH6746T SFH6747T SFH6755T SFH6756T SFH6757T DIN 58405
Contextual Info: SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors High Speed Optocoupler, 10 MBd SOIC-8 Package Features • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs • High speed: 10 MBd typical • + 5 V CMOS compatibility • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range

bat54

Abstract: 54s diode BAT54A BAT54A-GS08 BAT54A-GS18 BAT54C BAT54-GS08 BAT54-GS18 BAT54S
Contextual Info: BAT54 / 54A / 54C / 54S Vishay Semiconductors Small Signal Schottky Diodes, Single & Dual Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as

Contextual Info: SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors High Speed Optocoupler, 10 MBd SOIC-8 Package Features • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs • High speed: 10 MBd typical • + 5 V CMOS compatibility • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range

594D127

Abstract: Vishay DaTE CODE capacitor 293D
Contextual Info: 594D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Conformal Coated, Maximum CV, Low ESR FEATURES • New extended range offerings. • Large capacitance rating range. • Lowest ESR for a surface mount tantalum chip capacitor. • 100% surge current conditioning for C, D and R cases.

51a soic8

Contextual Info: SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors High Speed Optocoupler, 10 MBd SOIC-8 Package Features • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs • High speed: 10 MBd typical • + 5 V CMOS compatibility • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range

IEC 60127-1

Abstract: 1 smd fuse marking code n smd marking code mfu SMD code mfu 1 smd fuse marking code 32 fuse smd code N smd fuse marking code 20 1 smd fuse marking code fuse smd code h smd fuse marking H
Contextual Info: MFU 0805, MFU 0603 Vishay Beyschlag Thin Film Flat Chip Fuses FEATURES • Advanced thin film technology • Very quick acting fuse characteristics • Outstanding stability of fusing characteristics • Standard metric SMD sizes • Green product, supports lead Pb -free soldering

bf998 MOW

Abstract: marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 BF998R marking MOW BF998 VISHAY BF998RAW-GS08
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance

paste resistor thick film

Abstract: 100N vishay resistances guide
Contextual Info: MIC Technology Vishay Electro-Films Applications of High Conductivity Traces in Thin Film Substrates INTRODUCTION Vishay MIC Technology’s High conductivity processes have brought a significant contribution to the thin film world by enabling high current low resistance circuits to coexist with