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    250 B 340 SMD TRANSISTOR Search Results

    250 B 340 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    250 B 340 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


    Original     		PDF OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921

    BC547 smd

    Abstract: bc556 SMD BC547 smd package BC557 smd sot23 bc547 smd transistor bc557 SMD philips datasheet SMD BC547 bc337 SMD PACKAGE jc33725 bc557 SMD philips
    Text: Semiconductors Date of release: February 2005 General purpose transistors portfolio Single transistors Polarity IC mA VCEO (V) 25 30 40 100 NPN 150 45 100 PNP 150 500 SOT23 SOT346 (SC-59) SOT323 (SC-70) SOT416 (SC-75) SOT883 (SC-101) SOT54 (TO-92) Ptot max.


    Original     		PDF OT346 SC-59) OT323 SC-70) OT416 SC-75) OT883 SC-101) PMST5089 BC848B BC547 smd bc556 SMD BC547 smd package BC557 smd sot23 bc547 smd transistor bc557 SMD philips datasheet SMD BC547 bc337 SMD PACKAGE jc33725 bc557 SMD philips

    Untitled

    Abstract: No abstract text available
    Text: ZV/ZVY Series Stackpole Electronics, Inc. Low Voltage SMD Varistors Resistive Product Solutions Description: The ZV Series of low voltage varistors is designed to protect sensitive electronics devices against high voltage surges in the low voltage region. They offer excellent transient


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    ZV30K1812

    Abstract: ZV35K2220 ZV30K1210 ZV95K1812 ZV40K1812 ZV30K2220 ZV4M0805 ZV60K2220 zv20k1206 ZV14K0805
    Text: ZV/ZVY Series Stackpole Electronics, Inc. Low Voltage SMD Varistors Resistive Product Solutions Description: The ZV Series of low voltage varistors is designed to protect sensitive electronics devices against high voltage surges in the low voltage region. They offer excellent transient


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Stackpole Electronics, Inc. ZV/ZVY Series Resistive Product Solutions Low Voltage SMD Varistors A Keko-Varicon Product Description: The ZV Series of low voltage varistors is designed to protect sensitive electronics devices against high voltage surges in the low voltage region. They offer excellent transient


    Original     		PDF 180mm 330mm

    smd jv

    Abstract: JV08CH180 JV08CH220 JV08CH270 JV08CH330
    Text: VARISTORS JV 08CH SMD Specifications Surface Mount Metal Oxide Varistors Packaging Tape and Reel Standard: Features Option: Material Monolayer Construction in a 5mm x 8mm Package Size. Leadless, Surface chip form Bi-directional clamping No derating up to 125°C ambient.


    Original     		PDF

    4622-x50

    Abstract: 103CBT ST7580 4622X503 smd transistor 6g t60404 SMD transistor code c70 STM32F103CBT UM1005 smd led 5060
    Text: UM1005 User manual STEVAL-IHP002V1: PLM smartplug demonstration board Introduction This demonstration board is a smartplug based on the STM32F10x microcontroller, ST7540 PLM, and STPM01 energy metering ICs. The board is a node of a PLM network which allows the final user to monitor and manage the plugged load energy consumption.


    Original     		PDF UM1005 STEVAL-IHP002V1: STM32F10x ST7540 STPM01 4622-x50 103CBT ST7580 4622X503 smd transistor 6g t60404 SMD transistor code c70 STM32F103CBT UM1005 smd led 5060

    PHILIPS toroidal core 2P80

    Abstract: PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod
    Text: Soft Ferrites and Accessories Contents Introduction Quality Environmental aspects of soft ferrites Ordering information Applications Literature and reference publications Ferrite materials survey and specifications - Ferrite materials survey - Material specifications and graphs


    Original     		PDF CBW204 TN33/20/11 TN33/20/11-2P40 TN33/20/11-2P50 TN33/20/11-2P65 TN33/20/11-2P80 TN33/20/11-2P90 PHILIPS toroidal core 2P80 PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod

    B 315 D

    Abstract: SOT89 pq SOT494 SOD89 SOT233 SOT89 Package pq TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 250 B 340 smd Transistor msc377
    Text: CHAPTER 6 PACKING METHODS page Introduction 6-2 Glossary of terms 6-2 Packing methods in exploded view 6-3 Packing quantities, box dimensions and carrier shapes 6 - 13 Philips Semiconductors Discrete Semiconductor Packages Packing Methods Chapter 6 INTRODUCTION


    Original     		PDF OT195 OT223 MSC078 B 315 D SOT89 pq SOT494 SOD89 SOT233 SOT89 Package pq TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 250 B 340 smd Transistor msc377

    IP4223CZ6

    Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
    Text: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our


    Original     		PDF OD882 OT883 PVR100AD-B12V PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 IP4223CZ6 power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF

    sot446

    Abstract: sot482a MSC090 SOD89
    Text: SC18_1999_.book : SC18_CHAPTER_6_1999 1 Wed May 12 11:40:55 1999 CHAPTER 6 PACKING METHODS page Introduction 6-2 Glossary of terms 6-2 Packing methods in exploded view 6-3 Packing quantities, box dimensions and carrier shapes 6 - 13 SC18_1999_.book : SC18_CHAPTER_6_1999


    Original     		PDF OT186 OT32/82 MSC084 OT195 OT223 MSC078 sot446 sot482a MSC090 SOD89

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    TRANSISTOR SMD MARKING CODE A45

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G


    Original     		PDF LMSB709LT1G LMSB709LT3G 3000/Tape 10000/Tape OT-23 TRANSISTOR SMD MARKING CODE A45

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


    Original     		PDF OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF

    11N60C3

    Abstract: transistor 11n60c3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3

    transistor 2N3906 smd 2A SOT23

    Abstract: BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF Centr00 MPSA14 MPSA64 PZTA14 PXTA14 BCV29 BCV28 PMBTA13 PMBTA14 PMBTA64 transistor 2N3906 smd 2A SOT23 BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557

    3225 k250 diode

    Abstract: k300 varistor 3225 varistor k300 MP MARKING CODE VARISTOR Varistor SIOV-B80K460 SIOV-B40K440 m6g smd marking code 3225 K300 SIEMENS AVR GENERATOR smd code m6g
    Text: Contents Type Survey Page 5 8 General Technical Information 11 Application and Selection 29 Application-Specific Varistors 49 Quality 55 SMD Varistors 65 Disk Varistors 85 Block Varistors, Strap Varistors 145 153 Arrester Blocks 169 Siemens Matsushita Components


    Original     		PDF E32KV202 E32KV612 Q69X4546 Q69X4396 SIOV-E32KV202 SIOV-E32KV612 3225 k250 diode k300 varistor 3225 varistor k300 MP MARKING CODE VARISTOR Varistor SIOV-B80K460 SIOV-B40K440 m6g smd marking code 3225 K300 SIEMENS AVR GENERATOR smd code m6g

    11n60c2

    Abstract: 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω • Periodic avalanche rated ID 11 A • Extreme dv/dt rated


    Original     		PDF SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 Q67040-S4295 11n60c2 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original     		PDF SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2

    11N65C3

    Abstract: 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3
    Text: SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3

    V4680

    Abstract: 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A
    Text: SPN01N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity


    Original     		PDF SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 V4680 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A

    SPN01N60S5

    Abstract: No abstract text available
    Text: SPN01N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 6 Ω 0.3


    Original     		PDF SPN01N60S5 OT-223 VPS05163 Q67040-S4208 01N60S5 SPN01N60S5

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 2 — 15 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


    OCR Scan     		PDF