JTIDS Search Results

AJT150

Abstract: ASI10548
Contextual Info: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:

AJT006

Abstract: ASI10544 transistor j852
Contextual Info: AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI AJT006 is Designed for 9 – 1215 MHz, JTIDS Applications. ØE D F G H I FEATURES: M • Internal Input/Output Matching Network • PG = 9.3 dB at 6.0 W/1215 MHz

Contextual Info: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is Designed for 960 – 1215 MHz, JTIDS Applications. A 4x .062 x 45° 2xB C F E FEATURES: .040 x 45° D G • Internal Input/Output Matching Network • PG = 7.5 dB at 150 W/ 1215 MHz

Contextual Info: 5 7 . SGS-THOMSON AM80912-030 m RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM0912-150

Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
Contextual Info: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

AM80912-015

Contextual Info: AM80912-015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network

MS2213

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2213 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS Features • • • • • • • • REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED

motorola rf Power Transistor t 228

Contextual Info: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

Contextual Info: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

CC 1215

Contextual Info: Aß Avionics Pulsed Power Transistor PH0912-10 Preliminary 10 Watts, 960-1215 MHz, 7 |is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration

bd 142 transistor

Contextual Info: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of

Contextual Info: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 — 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microw ave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, In the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor Designed for 9 6 0 -1 2 1 5 MHz long or short pulse common base amplifier applications such as JTIDS and M o de-S transmitters. • Guaranteed Performance @ 960 MHz. 36 Vdc

376B

Abstract: MRF10031 motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

MRF10120

Abstract: motorola rf Power Transistor MOTOROLA 381 equivalent transistor j222 J280
Contextual Info: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc

Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm

AJT085

Abstract: ASI10547
Contextual Info: AJT085 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AJT085 is Designed for 960 –1215 MHz, JTIDS Applications. ØD C E F G FEATURES: H • Internal Input/Output Matching Network

AJT006

Abstract: ASI10544
Contextual Info: AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI AJT006 is Designed for 9 – 1215 MHz, JTIDS Applications. ØE D F G H I FEATURES: M • Internal Input/Output Matching Network • PG = 9.3 dB at 6.0 W/1215 MHz

DM-Q71-1-1 JTIDS Antenna

Abstract: DM Q71-1-1 JTIDS jtids antenna DM-Q71-1-1 q71-1-1 Q71-1-1 JTIDS Antenna Q711 Horizon Technology array antenna
Contextual Info: GROUND/MOBILE DM Q71-1-1 JTIDS ANTENNA The DM Q71-1-1 JTIDS antenna was designed as the ground antenna for the Army JTIDS Program. The high gain vertical dipole array provides maximum antenna gain at the horizon for LOS communications. MECHANICAL ELECTRICAL

transistor j222

Abstract: MOTOROLA 381 equivalent motorola transistor 307 MRF10120 motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960 – 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles.

AM80912-030

Contextual Info: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

BLA6H0912-500

Contextual Info: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 01 — 5 March 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.