250II Search Results

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S F —LXH M 250IID C REV. A B E.C.N. NUMBER AND REVISION COMMENTS C E.C.N. # 1 0 5 0 0 & # 10BR D R . & REDRAWN. DATE E.C.N. # 1 0 3 0 5 . 2 -5 -9 7 E.C.N. # 1 0 3 3 3 . 4 -1 7 -9 7 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C

Contextual Info: Or, Call Custom ! Service al 1-800-548-6132 USA Only FEATURES APPLICATIONS • INCLUDES INTEGRATION CAPACITOR, RESET AND HOLD SWITCHES, AND OUTPUT MULTIPLEXER • CURRENT TO VOLTAGE CONVERSION • PHOTODIODE INTEGRATOR • CURRENT MEASUREMENT • LOW NOISE: 10nVrms

gruner RELAY

Abstract: D6450 T60403-L4097-X028-80 MT8931be gruner 740
Contextual Info: MITEL MT8931B Subscriber Network Interface Circuit CMOS ST-BUS FAMILY Preliminary Inform ation 9161-002-171-NA Features • • • • • • • • • • • • • • CCITT 1.430 and ANSI T1.605 S/T interface Full-duplex 2B + D , 192 kbit/s transmission

Contextual Info: • MITEL’ 1^24=1370 □ D 0 7 ci e 3 3TT ■ M I T C MT8931B Subscriber Network Interface Circuit IS02-C M 0S ST-BUS FAMILY Preliminary Inform ation ISSUE 1 9161-002-171-NA Features • • • • • • • • • • • • • • November 1992

cts 8321

Abstract: Matsushita mmi 50 Matsushita mmi 25 8321A I321 MA729 S-8321 S-8321A S-8322 Matsua mmi 50
Contextual Info: Contents Features . 1 Applications . 1 Block diagram . 1 Selection Guide . 2

rm4200 analog multipliers

Abstract: OP 741 mini dip ic pin diagram of 741 op-amp sine wave square wave RC4200 OP-AMP ic 741 used as summing amplifier RM4200AD Voltage multiplier using 741 opamp 850196 ah7 transistor RM4200D
Contextual Info: Special Functions RC4200 RC4200 Analog Multiplier over the full tem perature range. This non­ linearity com pensation com bined w ith the low gain and offset d rift inherent in a well designed m onolithic chip provides a very low accuracy tem pco. The excellent linearity and versatility were

Contextual Info: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: EL2074C élantec HIGH PERFORMANCE ANAtOG INTEGRATED CtRCtllTS EL2074C 4M MHz GBWP Gain-of-2 Stable Operational Amplifier F e a tu r e s G e n e r a l D e s c r ip t io n • 400 M H z gain-bandw idth product • Gain-of-2 stable • U ltra low video distortion =

SFN106B9

Abstract: DS0026 IRFF121 3909
Contextual Info: b l D E^ f lf fl3bfifciD5 l3 t .a k 0 5 bl ‘ DE •SOLITRÔN DEVICES INC B o l i t r D E V I C E S , o n T I T | . s f n T T- 3 9 - 0 9 i o 6 B 9 IIM C . POWER MOS DEVICE 60V/6A N Channel, TO-39 Package, IRFF121 Equivalent The new Solitron Power MOS technology

HY5118164

Abstract: F1024
Contextual Info: • H Y UN DA I HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin

60P06E

Abstract: 6b69e RS111
Contextual Info: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l

2766G

Contextual Info: PRELIMINARY DATA SHEET WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS U PC 2766G R FUNCTIONAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±0.3 dB Typical

transistor j3003

Abstract: svi 1302 9316V ESB 24-40
Contextual Info: Contents Features. Applications. Block Diagram. Selection Guide.

SSF-LXH250IID

Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER REV. S S F —L X H 2 5 0 IID D E .C .N . NUM BER AND A CHG 'D LEAD B UPDATED SAFE C UPDATED D E .C .N . # 1 0 4 -9 6 , & REVISION COMMENTS 1 0 -2 1 -9 3 El PER. SPECS. 1 2 -2 0 -9 4 DIMS. 5 -2 3 -9 5 #10BRDR & ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C

SFN321

Abstract: T-39 D0238 5M6-24UNF-2A TO228 T0190
Contextual Info: 8368602 SOLITRON DEVICES SFN321 INC 70C 02060 0 / T-39-11 N SWITCH MOS PACKAGE TO-3 POWER MOS MAXIMUM RATINGS SYMBOL • VDS *D 350 Drain Current, Continuous @ Tc«25°C 3.0 A 12 A 1+ to o V Power Dissipation @ Tc»25°C 40 W Drain Current, Clamped Inductive

ic abaj

Abstract: mark EA SOT23-5 Nippon capacitors MAX4333
Contextual Info: A I/J X IA I 19-1192; Rev 1 ;4 /9 7 S i n g l e / Du a l / Q u a d , L o w - P o w e r , Si ng l e- Suppl y, R a i l - t o - Ra i l I/O Op A m p s w i t h S h u t d o w n The M AX4330-MAX4334 single/dual/quad op amps combine a wide 3MHz bandwidth, low-power operation,

EM- 546 motor

Abstract: G3N60C
Contextual Info: HGTD3N60C3, HGTD3N60C3S HARRIS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBTs June 1997 Features Description • 6A, 600V at Tc = 25°C The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn YTF643 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. DRIVE APPLICATIONS. # 3 .6 ± 0 .2 ' . Low Drain-Source ON

7660S

Abstract: TC7660SCOA
Contextual Info: ~ Semiconductor, Inc. TC7660S SUPER CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC7660S is a pin-compatible upgrade to the Indus­ try standard TC7660 charge pump voltage converter. It converts a +1.5V to +12V input to a corresponding -1,5V to

3B149

Contextual Info: SSI 32R2532R ¿ m m M tm +5V, 8-Channel Thin Film Read/Write Device * A TDK Group/Company Advance Information January 1996 DESCRIPTION FEATURES The SSI 32R2532R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write

Fluke a55

Contextual Info: i T u TECHNOLOGY nm wideband RMS-DC Converter Building Block F€ A T U R € S D C S C R IP TIO fl • 300MHz 3dB Bandwidth The LT1088 is a thermally based R M S -D C converter build­ ■ 1 % Accuracy D C -5 0 M H Z ing block. It converts the input waveform to heat. Using ex­

CXA1372s

Contextual Info: CXA1372Q/S SONY RF Signal Processing Servo Am plifier for CD Player Description The CXA1372 is a bipolar IC developed for RF signal processing focus OK, mirror, defect detection, EFM comparator and servo control. 48pin QFP (Plastic) Features • Single power supply, 5V

A 933 S transistors

Abstract: qe 644 3-12 Volt dc motor HGTD10N50F1S
Contextual Info: rn H A R R IS 00 sem iconductor HGTD10N40F1, HGTD10N40F1S HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA TOP VIEW • 10 Amp, 400 and 500 Volt • Vce on 2.5V Max. • t fall

TNY 176 PN EQUIVALENT

Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
Contextual Info: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.