HY514404B
Abstract: No abstract text available
Text: HY514404B 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514404B
128ms
10/Jan
HY514404B
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1Mx4 EDO RAM
Abstract: 1Mx4 HY514404B
Text: HY514404B 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514404B
1Mx4 EDO RAM
1Mx4
HY514404B
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Untitled
Abstract: No abstract text available
Text: •'HYUNDAI HY514404B Series 1M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells
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HY514404B
HY51412
128ms
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HY5118164
Abstract: F1024
Text: • H Y UN DA I HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin
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HYM572A224A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A224ARG/ASLRG/ATRG/ASLTRG
DQ0-DQ71)
1EC06-10-APR95
HY5118164
F1024
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048bit EEPROM on a 168 pin
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HYM572A224A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A224ARG/ASLRG/ATRG/ASLTRG
01CKQ2SXMX.
012SQ18)
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Untitled
Abstract: No abstract text available
Text: 'HYUNDAI HYM572A124A R-Series Unbuffered 1M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A124A is a 1M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin
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HYM572A124A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A124ARG/ASLRG/ATRG/ASLTRG
10CH2
4b75Dflfl
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Untitled
Abstract: No abstract text available
Text: -«YUHOWI • HY514404B 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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OCR Scan
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PDF
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HY514404B
128ms
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5v RAS 0610
Abstract: No abstract text available
Text: • HY UN DA I HYM572A124A R-Series Unbuffered 1M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A124A is a 1M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin
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HYM572A124A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A124ARG/ASLRG/ATRG/ASLTRG
A0-A10)
DQ0-DQ71)
5v RAS 0610
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HY5116400BT
Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC
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256KX4)
HY531000AJ
HY531000ALJ
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
HY512260SLJC
HY512264JC
HY512264LJC
HY5116400BT
HY5117400CJ
50-PIN
HY5117804BT
TSOP-II 44
26-PIN
HY5118160BJ
hy51v65804
HY5117400BJ
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 4 4 0 4 B 1Mx4, Extended Data Out mode DESCRIPTION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4 -b it c o n fig u ra tio n w ith Extended Data Out m ode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
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HY5118164BJC
Abstract: HYM5V72A404 HY514404BJ HY5117404A
Text: QUICK REFERENCE DIMM MODULE 5V Unbuffered DIMM TYPE SIZE 168 Pin 8MB Unbuffered DIMM 16MB 32MB DESCRIPTION 1M X 64 EDO, SL PART NO. HYM564124AR/ATR SPEED REF. 60/70/80 DEVICE USED HEIGHT 1K HY5118164BJC/BTC x 4 S, 1" D, 1" S, 1" IM X 72 EDO, SL HYM572A124AR/ATR
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HYM564124AR/ATR
HYM572A124AR/ATR
HYM564224AR/ATR
HYM564214AF/ATF
HY5118164BJC/BTC
HY514404BJ/BT
HY5117804BJ/BT
HY5118164BJC
HYM5V72A404
HY514404BJ
HY5117404A
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