256X16* STATIC RAM Search Results

256x16* STATIC RAM

Abstract: c28w Video RAM SIO12 AK5216128WV-10 AK5216128WV-12 AK5216128WV-80 SIo-12 BY164 48aa50
Contextual Info: ACCUTEK MICROCIRCUIT 31E D • 01071=47 GOGOCia? T ■ ACU T -4 6 -2 3 -2 0 ACCUTEK MICROCIRCUIT AK5216128WV 128Kx 16/256x16 Dual Port Video Ram The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx16 DRAM

Contextual Info: ÄPLESSEY S e m ic o n d u c to rs . JULY 1989 PRODUCT BRIEF DSPA60000 CONFIGURABLE DSP ARRAY The internal resources provided by the DSPA60000 allow complex DSP algorithms to be integrated within one device. High performance RAM and multiplier/accumulators are

video ram

Abstract: 256x16* STATIC RAM AK5216128WV-12 SIO15 dual port video ram
Contextual Info: I AK5216128WV 128KX 16/256x16 Dual Port Video Ram MICROCIRCUIT CORPORATION DESCRIPTIONS The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx 16 DRAM Port and a 256 x 16 Serial Read/Write Port. The Serial Read/Write Ports are connected to an internal 2K-bit

Contextual Info: HM62W1664HJP-35 1/3 IL08 * C-MOS 2M(65,536x16)-BIT STATIC RAM -TOP VIEW- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 V DD (+3.3V) GND GND V DD (+3.3V) NC NC NC 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 (V PIN

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

256x16* STATIC RAM

Contextual Info: O K I Semiconductor MSM54V16272 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

QPSK using xilinx

Abstract: cable tv using internet block Diagram ofdm modem chip encoder OFDM BY XILINX satellite modem FPGA PQ208 pb sram 256x16* STATIC RAM "Western Digital" pci standards Tv set top BOX Diagram
Contextual Info: Spartan-II FPGAs in Set-Top Boxes - Customer Tutorial April 2000 File Number Here Agenda Introduction Market Overview Spartan-II Set-Top Box Solutions Programmable ASSP Summary Xilinx at Work in Hot New Technologies ® www.xilinx.com Overview Xilinx - The Industry Leader in FPGAs/CPLDs

Contextual Info: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W

KM6161002B

Contextual Info: CMOS SRAM KM6161002B, KM6161002BI Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

ae5t

Abstract: j4213
Contextual Info: KM6161002B, KM6161002BI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6161002B- 8 : 200mA(Max.) KM6161002B -1 0 : 195mA(Max.)

Contextual Info: KM6164002, KM6164002E, KM6164002I CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

KM616U4110C

Contextual Info: Preliminary CMOS SRAM KM616U4110C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package Revision History Revision No. History 0.0 0.01 Draft Date Initial draft Errata correction Remark July 4, 1998 Preliminary

ZF12

Contextual Info: K6T4016S6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.01 1.0 History Draft Date Remark Initial draft Errata correction June 26, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.

Contextual Info: CMOS SRAM K6R1016C1B-C, K6R1016C1B-I Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

KM616U4010C

Abstract: KM616U4010CLZI-L
Contextual Info: KM616V4010C, KM616U4010C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package Revision History Revision No. History Draft Date Remark Initial draft - UB/LB power control Errata correction July 4, 1998

k6t4016c3c-tf70

Abstract: K6T4016C3C K6T4016C3C-RB55 K6T4016C3C-TB70 K6T4016C3CTB7 K6T4016C3CF K6T4016C3C-TF55
Contextual Info: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

KM616U4010C

Abstract: KM616U4010CLZI-L
Contextual Info: Preliminary CMOS SRAM KM616U4010C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package Revision History Revision No. History 0.0 0.01 Initial draft - UB/LB power control Errata correction Draft Date Remark

Contextual Info: Preliminary CMOS SRAM KM616S4110C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.01 History Draft Date Remark Initial draft Errata correction June 26, 1998 August 17, 1998 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

k6t4016c3c-tf70

Abstract: K6T4016C3C-TB70 K6T4016C3C-TB55 K6T4016C3C April 1999
Contextual Info: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

IS61SP25636

Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Contextual Info: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B