257AB Search Results
257AB Price and Stock
Nexperia 74LVC257ABQ,115IC MULTIPLEXER 4 X 2:1 16-DHVQFN |
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74LVC257ABQ,115 | Cut Tape | 5,603 | 1 |
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74LVC257ABQ,115 | Reel | 8 Weeks | 6,000 |
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74LVC257ABQ,115 | 12,113 |
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74LVC257ABQ,115 | Reel | 6,000 |
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74LVC257ABQ,115 | 1 |
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74LVC257ABQ,115 | 8 Weeks | 6,000 |
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74LVC257ABQ,115 | 10 Weeks | 3,000 |
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74LVC257ABQ,115 | 10 Weeks | 3,000 |
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Nexperia CBT3257ABQ,115IC MUX/DEMUX 4 X 2:1 16-DHVQFN |
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CBT3257ABQ,115 | Cut Tape | 472 | 1 |
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CBT3257ABQ,115 | Reel | 8 Weeks | 6,000 |
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CBT3257ABQ,115 | 2,287 |
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CBT3257ABQ,115 | Reel | 6,000 |
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CBT3257ABQ,115 | 10 Weeks | 3,000 |
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CBT3257ABQ,115 | 10 Weeks | 3,000 |
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APEM Inc 5257ABTOGGLE SWITCH 5000 MINIATURE |
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5257AB | Bulk | 25 |
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5257AB |
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5257AB | Bulk | 25 |
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5257AB | Bulk | 14 Weeks | 25 |
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5257AB |
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Texas Instruments SN74LVC257ABQBRIC DATA SELECT/MUX 4X2:1 16-WQFN |
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SN74LVC257ABQBR | Reel | 3,000 |
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SN74LVC257ABQBR | 3,000 |
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SN74LVC257ABQBR | 5,500 |
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TE Connectivity D25-7A-BT-08-1C-L25MBHD25-7A-BT-08-1C-L25MBH |
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D25-7A-BT-08-1C-L25MBH | Bulk | 111 Weeks | 50 |
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D25-7A-BT-08-1C-L25MBH |
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257AB Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor C 4231
Abstract: 2N7081
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OCR Scan |
2N7081 O-257AB 10peration transistor C 4231 2N7081 | |
2N7085Contextual Info: 2N7085 e r S ü c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) (A) (A) 100 0.075 20 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) |
OCR Scan |
2N7085 O-257AB 2N7085 | |
Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View |
OCR Scan |
2N7089 O-257AB 1503C) P-36731-- P-36731--Rev. | |
2N7085Contextual Info: 2N7085 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TO-257AB Hermetic Package D G Case Isolated S G D S N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol |
Original |
2N7085 O-257AB P-36736--Rev. 30-May-94 2N7085 | |
2N7091Contextual Info: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1 |
OCR Scan |
2N7091 O-257AB 2N7091 | |
2N7092Contextual Info: 2N7092 CX'SiSconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V fDS(ON) <n) (A) -200 0.50 -8.0 V(BR)DSS •d 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1 |
OCR Scan |
2N7092 O-257AB 10peration 2N7092 | |
Contextual Info: Tem ic 2N7086 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Q ) I d (A) 200 0.16 14 TO-257AB H erm etic P ackage O r O — It J |i Case Isolated s G D S Top View |
OCR Scan |
2N7086 O-257AB P-37012--Rev. | |
transistor c 4236
Abstract: ic cow 160v 150 N7082 2N7082 EI33
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OCR Scan |
2N7082 O-257AB transistor c 4236 ic cow 160v 150 N7082 2N7082 EI33 | |
Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As |
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BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) O220M BYV32-xxxM BYV32-xxxAM BYV32-xxxRM | |
Contextual Info: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) |
Original |
IRFY240 IRFY240M O-257AB 330mJ O220M O-257AB) IRFY240 | |
Transistor 3-347
Abstract: 3-347
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BDS16 BDS17 O220M T0-257AB) BDS17 O-257AB) Transistor 3-347 3-347 | |
Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As |
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BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) BYV32-M O220M BYV32-xxxM BYV32-xxxAM | |
Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As |
Original |
BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) BYV32-M O220M BYV32-xxxM BYV32-xxxAM | |
D 4242 transistor
Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
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OCR Scan |
2N7086 O-257AB D 4242 transistor transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456 | |
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Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) |
Original |
BDS16 BDS17 O220M T0-257AB) BDS16 O-257AB) | |
9528Contextual Info: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated |
Original |
IRFY430 IRFY430M O-257AB O220M O-257AB) IRFY430M 9528 | |
9522 transistor
Abstract: 9522
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Original |
IRFY240 IRFY240M O-257AB O220M O-257AB) IRFY240M 9522 transistor 9522 | |
transistor 9527
Abstract: 9527 irfy330 tr 9527
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IRFY330 O-257AB O220M O-257AB) transistor 9527 9527 irfy330 tr 9527 | |
Contextual Info: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated |
Original |
IRFY430 IRFY430M O-257AB 280mJ O220M O-257AB) IRFY430 | |
BYV32-200
Abstract: 100v 20a fast recovery power diode
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Original |
BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) O220M BYV32-xxxM BYV32-xxxAM BYV32-xxxRM BYV32-200 100v 20a fast recovery power diode | |
BDS12M2A
Abstract: EG marking Q217
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Original |
BDS12M2A O-257AB BDS12M2A-JQRS BDS12M2A EG marking Q217 | |
Contextual Info: T e m ic 2N7090 Siliconix_ P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) ( ß ) I d (A) -2 0 0 0.80 - 5 .7 TO-257AB H erm etic Package S 9 O C ase iso lated O D UUU G D S Tbp View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) |
OCR Scan |
2N7090 O-257AB P-37012-- 2N7090_ | |
2N7090Contextual Info: C T S ilico n ix ^ U r 2N7090 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS -2 0 0 •d r DS(ON) (H ) (A) 0 .8 0 -5 .7 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1 |
OCR Scan |
2N7090 O-257AB 2N7090 | |
2N7091Contextual Info: 2N7091 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.20 –14 TO-257AB Hermetic Package S G Case Isolated D G D S P-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter |
Original |
2N7091 O-257AB P-36731--Rev. 30-May-94 2N7091 |