2SB117 Search Results

B1326

Abstract: 2SB1175 2SD1745
Contextual Info: Power Transistors 2SB1175 2SB1175 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1745 •Features U n it : mm 3.7max. 7.3max. • Low collector-eim itter saturation voltage Vce<,.o 3.2m ax. £L • Good linearity of DC c u rre n t gain (hFE)

74 240A

Abstract: 2SB1174 2SD1744
Contextual Info: Power Transistors 2SB1174 2SB1174 Silicon P N P Epitaxial P lanar Type Package Dimensions Power Switching Complementary Pair with 2S D 1744 • Features • • • • Low collector-eimitter saturation voltage VcE(sau Good linearity of DC cuirent gain ( I i f e )

2SB1171A

Abstract: 001582 IC vertical panasonic 2SB1171 2SD1718 hlkl
Contextual Info: Power Transistors 2SB1171, 2SB1171A 2SB1171, 2SB1171A Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Am plifier T V Vertical Deflection Output C om plem entary Pair with 2 S D 1 718 U n it - mm 3.7m ax 7.3m ax. • Features 3.2m ax. 0 .9 ± 0 .1

2sb117

Abstract: 2SB1179 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power T ransistors 2SB1179, 2SB1179A 2SB1179, 2SB1179A Package Dim ensions Unit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3max. Pow er Amplifier, Switching C om plem entary Pair with 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A • Features 0.9 ± 0 .1

Contextual Info: Product specification 2SB1176 Features TO-252 Low collector-emitter saturation voltage VCE sat . 6.50 +0.2 5.30-0.2 Satisfactory linearity of forward current transfer ratio hFE. Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1

2SD1751 datasheet

Abstract: 2SB1170 2SD1751
Contextual Info: Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification Complementary to 2SB1170 3.5±0.2 0.8±0.2 7.2±0.3 3.0±0.2 • Features ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 12.6±0.3 7.2±0.3 1.0±0.2 0.75±0.1 0.4±0.1

2SB1170

Abstract: 2SD1751
Contextual Info: Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification Complementary to 2SB1170 3.5±0.2 0.8±0.2 7.2±0.3 3.0±0.2 • Features ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4

2SB1178

Abstract: 2SB1178A 2SD1748 2SD1748A
Contextual Info: Power Transistors 2SD1748, 2SD1748A Silicon NPN triple diffusion planar type Darlington Unit: mm For low-freauency power amplification Complementary to 2SB1178 and 2SB1178A 7.0±0.3 High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to

2SB1171

Abstract: 2SB1171A 2SD1741 2SD1741A
Contextual Info: Power Transistors 2SD1741, 2SD1741A Silicon NPN triple diffusion planar type Unit: mm For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A 7.0±0.3 Collector to 2SD1741 Ratings 200 VCBO 200 150 VCEO emitter voltage 2SD1741A

Contextual Info: Power T ransistors 2SD1741, 2SD1741A 2SD1741, 2SD1741A Silicon PNP Triple-Diffgsed Planar Type Package Dimensions Power Amplifier TV Vertical Deflection Output Pair with 2SB1171, 2SB1171A • Features U nit ! mm 3.7max. 7.3max. 3.2max. 0.9 ± 0 .1 0.5max.-

2sb117

Abstract: 2SB1178 2SB1178A 2SD1748 2SD1748A
Contextual Info: Power T ransistors 2SB1178, 2SB1178A 2SB1178, 2SB1178A Package Dim ensions Silicon PNP Epitaxial Planar Darlington Type Unit ! i 3.7max. 7.3m«x. 3.2max. A F Power Am plifier ' C om plem entary Pair with 2 S D 1 7 4 8 , 2 S D 1 7 4 8 A 0.9 ±0.1 0.5max. = &

Contextual Info: Power Transistors 2SD1744 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1174 7.0±0.3 3.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.8±0.2 7.2±0.3 3.0±0.2 +0.3 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package

UJ23

Abstract: 2SB1179 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power T ransistors 2SB1179, 2SBÌ179V Package üvmensïons U n it ! m Silicon P N P Epitaxial P lan ar Darlington Type 7. 3 m a x . Power A m p lifie r, S w itc h in g C o m p le m e n ta ry P a ir w ith 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A , 3. 7m a x. 3.2max.

2SB1176

Abstract: 2SD1746
Contextual Info: Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 4.6±0.4 Parameter Symbol Rating Unit Collector-base voltage Emitter open

B13H

Contextual Info: Power Transistors 2SB1176 2SB1176 Silicon PN P Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1746 U nit ! mm • Features • L o w c o l l e c t o r - e m i t t e r s a t u r a t io n v o lta g e 3-7 max 7.3maX. 3.2max.

2SB1177

Abstract: 2SD1747 p253
Contextual Info: Power T ransistors 2SB 11 7 7 2SB1177 Silicon PNP Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r S w itc h in g Unit ! i C o m p le m e n ta ry P a ir w ith 2 S D 1 7 4 7 • F e a tu re s 7.3max. • Low collector-eim itter saturation voltage VCe(.d

2SB1170

Abstract: 2SD1751
Contextual Info: Power Transistors 2SB1170 2SB1170 Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1751 U nit * mm • Features 3.7max. 7.3max. • High DC current gain I i f e 3.2max. and good linearity • Low collector-eimitter saturation voltage

2SB1174

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1174 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Satisfactory linearity of forward current transfer ratio hFE. Unit: mm 2.30 +0.1

2SB1170

Abstract: 2SD1751
Contextual Info: Power Transistors 2SD1751 2SD1751 Silicon NPN Triple-Diffused Planar Darlington Type • Package Dimensions Power Amplifier Complementary Pair with 2SB1170 ■ Features • High DC cu rre n t gain hn; and good linearity • Low collector-em itter saturation voltage (VcEisati)

B1171

Abstract: 2SB1171 2SB1171A 2SD1718 IC vertical panasonic ELSA gbfl
Contextual Info: Power Transistors 2SB1171, 2SB1171A 2SB1171, 2SB1171A Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Am plifier T V Vertical Deflection Output C om plem entary Pair with 2 S D 1 7 1 8 U n it • 3.7max, 7.3m ax. ■ Features 0.9 ± 0.1 0 .5 m ax .-

Contextual Info: Power Transistors 2SD1748, 2SD1748A Silicon NPN triple diffusion planar type Darlington Unit: mm For low-freauency power amplification Complementary to 2SB1178 and 2SB1178A 7.0±0.3 High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1

Contextual Info: Product specification 2SB1175 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1