2SB1176
Abstract: 2SD1746
Text: Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 4.6±0.4 Parameter Symbol Rating Unit Collector-base voltage Emitter open
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2SB1176
2SD1746
2SB1176
2SD1746
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1
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2002/95/EC)
2SB1176
2SD1746
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2SB1176
Abstract: 2SD1746
Text: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1176 7.0±0.3 • Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 TC=25˚C
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2SD1746
2SB1176
2SB1176
2SD1746
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2SB1176
Abstract: 2SD1746
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2002/95/EC)
2SB1176
2SD1746
2SB1176
2SD1746
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2SB1176
Abstract: 2SD1746
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm 0˚ to 0.15˚ 2.5±0.2 (1.0) 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory liniarity of forward current transfer ratio hFE
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2002/95/EC)
2SD1746
2SB1176
2SD1746
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OF IC 723
Abstract: 2SB1176 2SD1746
Text: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1176 7.0±0.3 • Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 TC=25˚C
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2SD1746
2SB1176
OF IC 723
2SB1176
2SD1746
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 12.6±0.3 7.2±0.3 1.0±0.2 0.75±0.1 0.4±0.1
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2002/95/EC)
2SB1176
2SD1746
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1
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2002/95/EC)
2SB1176
2SD1746
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm 2.5±0.2 0˚ to 0.15˚ 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 • Low collector-emitter saturation voltage VCE sat • Satisfactory liniarity of forward current transfer ratio hFE • Large collector current IC
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2SD1746
2SB1176
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ic 4604
Abstract: 2SB1176 2SD1746 CW-10-3
Text: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 0˚ to 0.15˚ 2.5±0.2 1.0 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory liniarity of forward current transfer ratio hFE
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2SD1746
2SB1176
ic 4604
2SB1176
2SD1746
CW-10-3
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SD1761
Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Text: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)
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2SD1746
2SD1747
2SD1747A
2SD1748
2SD1748A
2SD1749
2SD1749A
2SB1183
SC-63
2SD1759F5
2SD1761
2S01761
2sd1764
2sb117
2SD1760F5
2SD1747
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2S D 17 4 6 2SD1746 Silicon N P N Epitaxial P lanar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S B 1 1 7 6 U n it ! mm 3.7max. 7.3m ax. • Features 3.2m ax. • Low collector-em itter saturation voltage V ce<mo
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2SD1746
bT32fi5E
2sdi74ó
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2SD1539
Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5
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O-126
O-202
T0-220
O-220F
2SA1605
2SC2258
2SC3063
2SC2923
2SC4714
2SC3942
2SD1539
d53 pnp transistor
2sa137
2sb1071
2SA1375
2SA1605
2SA1817
2SC2258
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nec 2sc3157
Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419
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2SD1660
2SD1198A
2SD1198A
2SD1622
2SD1631
2SC2883
2SD1406
2SC3299
2SD1412
2SD1296
nec 2sc3157
2SD999
2SD1317
2sc3694
2SC3760
2SD2061
2sd2239
nec 1678
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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2SC4714
Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F
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O-126
D52SK,
O-202
T0-220
O-220F
2SA1605
2SC2258
2SC3063
2SC2923
2SC4714
2SA1817
2SD1539
2SA1605
2SC2258
2SC3063
2SC3942
2SC3945
2SC4717
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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B1548
Abstract: 2SB1299A
Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200
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T0-220
O-220F
2SB954/A
2SB1052
2SD1480
2SD1265/A
O-220E
T0220D
2SB1169/A
2SB1170
B1548
2SB1299A
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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2SC4470
Abstract: 4892 2sc3904 2SC3356 2SC3609 2sc3828 2SC4901 2SC3585 2sc3613 2SC4928
Text: - m £ 2SC 4856 2SC 4857 2 SC 4858 % tt Manuf. T y p e No. = SANYO >¥ =n =# 2 SC 4859 2SC 4860 2SC 4861 2SC 4862 2 SC 4863 2SC 4866 2SC 4867 2SC 4868 2SC 4869 2 m B NEC 2SC3937 2SC4904 2SC3704 2SC3609 2SC4093 2SC4900 2SC3704 2SC4228 2SC4903 2SC3585 2SC4902
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2SC4394
2SC4226
2SC49Ã
2SC3937
2SC4470
2SC3356
2SC4904
2SC3704
2SC3609
2SC4093
4892
2sc3904
2sc3828
2SC4901
2SC3585
2sc3613
2SC4928
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