2606C Search Results

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N d DEMO BOARD AVAILABLE See Appendix A, Burr-Brown 1CData Book— Data Conversion Products FEATURES DESCRIPTION • SLEW RATE: 2500V/ns • VERY LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.008%/0.009°

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Abstract: SRAF520 ITO-22QAC
Contextual Info: TAIWAN SEM ICONDUCTO R E RoHS SRAF520 • SRAF5150 Isolated 5.0 AMPS. Schottky Barrier Rectifiers ITO-22QAC C OM PLIANCE s . ■ aUlKS.ttJ)“ ■" ic> ,1 3 4 .;s * p l A .1 1 « 3 CC) .130(2.3;:. /lUClA'IUM/ .ISIJV/i.ï) "GUì :'4.9Ì Features ■y'

Contextual Info: SIEMENS AKTIENG ESE LLSCHAF M7E D • Ü535b05 GGSTSDS fi « S I E G S IE M E N S BPX43 SERIES PHOTOTRANSISTOR "F H Kol Package Dimensions in Inches mm 11 0(2 8) 1 1 0 (2 8) Radiant Sensitive Area Maximum Ratings Operating and Storage Temperature (Tsro, T ^ .-55°C to +125BC

HN613256P

Abstract: HN27C301 1S00G CRACK DETECTION PATTERNS HN27256
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. ST RU CTU RE 1C memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memo­ ries is high speed but small capacity, instead, MOS

4N32

Abstract: 4N33 C1686 C1894 BVEB
Contextual Info: EQ PHOTODARLINGTON OPTOCOUPLERS OPTOELECTROmCS 4N32 4N33 DESCRIPTION PACKAGE DIMENSIONS [ft [ft if! The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES & APPLICATIONS • High isolation resistance— 1011f l

Contextual Info: July 1992 ADVANCE INFORMATION Micro Linear ML4817 Single-Ended High Frequency PWM Controller GENERAL DESCRIPTION FEATURES The ML4817 High Frequency PWM Controller is optimized for use in single-ended Switch Mode Power Supply designs running at frequencies up to 1MHz.

DS3630BN

Abstract: DS1630B DS1630BJ DS3630B DS3630BJ J14A N14A
Contextual Info: DS1630B/DS3630B Hex CMOS Compatible Buffer General Description Features The DS1630B/DS3630B is a high current buffer intended for use with CMOS circuits interfacing with peripherals re­ quiring high drive currents. The DS1630B/DS3630B fea­ tures low quiescent power consumption typically 50 jllW as