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    Untitled

    Abstract: No abstract text available
    Text: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.


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    PDF H11B1 H11B2 H11B3 H1181 H11B3 E90700 ST1603A H11B1) H11B2)

    Untitled

    Abstract: No abstract text available
    Text: E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. t 1 8-3 6.86


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    PDF E90700

    switch H11B

    Abstract: optocouplers H11B1 ST1736 H11B2 H11B ST1723
    Text: PHOTODARLINGTON OPTOCOUPLERS B m E u tm M c s H11B1 H11B2 H11B3 PACKAGE DIMENSIONS E&] DESCRIPTION Si [ft The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodariington transistor in a dual in-line package.


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    PDF H11B1 H11B2 H11B3 H11B3-100 E90700 JI2-54! ST1603A ST1723 switch H11B optocouplers H11B1 ST1736 H11B ST1723

    ST-2124

    Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device


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    PDF H11AG1 H11AG2 H11AG3 H11AG ST1603A ST-2124 ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf

    C1684 r .85 transistor

    Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
    Text: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS


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    PDF ST1603A C2Q79 E90700 hu1685 C1296A C1S94 VCEat10 C1684 r .85 transistor 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684

    transistor KJJ

    Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
    Text: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.


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    PDF MCT210 MCT210 MCT210â E90700) C1256 transistor KJJ C-1248 C1243 C1248 C1250 C2079 Phototransistor with base emitter CI242 C1256

    Untitled

    Abstract: No abstract text available
    Text: f i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS II MCT2E PACKAGE DIMENSIONS DESCRIPTION T h e M C T 2E is a NPN silicon planar phototransistor db f i Æ optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS Utility/econom y isolator


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    PDF Vcea110

    Untitled

    Abstract: No abstract text available
    Text: BQ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS 1 MCT2 PACKAG E DIMENSIONS DESCRIPTION The M C T 2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting t t diode. • a SS I Œ 8.89 8.38 “ J FEATURES & APPLICATIONS


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    PDF ST1603A 74bbfl51

    cmy17

    Abstract: CHY17f-2 CMY17F-2 CHY17 cmy17f
    Text: [SO PHOTOTRANSISTOR OPTOCOUPLERS 0 F Ï B E L E CIROKiCS CNY17F-1 CMY17F-2 CNY17F-3 DESCRIPTION PACKAGE DIMENSIONS rib rifa T h e CNY17 series consists of a Gallium A rsenide IRED coupled with an N P N phototransistor. FEATURES High isolation voltage 5 3 0 0 VAC R M S — 1 minute


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    PDF CNY17F-1 CMY17F-2 CNY17F-3 CNY17 CNY17F1: CNY17F2: CNY17F3: ST1603A C1680 cmy17 CHY17f-2 CHY17 cmy17f

    K C2026 Y

    Abstract: C2026 Y C2035 740L6000 c2026 c2026 semiconductor c2033 740L6011 C2036 k C2026
    Text: E li HIGH-SPEED LOGIC-TO-LOGIC OPTOCOUPLERS OPTOELECTRONICS OPTO/LOGIC LSTTLto ORDER INFORMATION SYMBOL Buffer Inverter 740L6000 740L6001 740L6010 740L6011 FEATURES LOGIC COMPATIBILITY PART LOGIC OUTPUT NUMBER INPUT OUTPUT FUNCTION CONFIGURATION 740L6000 LSTTL


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    PDF 740L6000 740L6001 740L6010 740L6011 740L6000 740L6001 740L6010 740L6011 K C2026 Y C2026 Y C2035 c2026 c2026 semiconductor c2033 C2036 k C2026

    Untitled

    Abstract: No abstract text available
    Text: K l PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11A1 H11A2 H11A3 H11A4 H11A5 PACKAGE DIMENSIONS DESCRIPTION The H11A series consists of a gallium arsenide infrared emitting diode, coupled with a silicon phototransistor in a dual in-line package. FEATURES


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    PDF H11A1 H11A2 H11A3 H11A4 H11A5 E90700 I2-54! ST1603A C2079 ST1728

    Untitled

    Abstract: No abstract text available
    Text: [£Ö PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS 3 CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSION! DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. WWW High isolation voltage 5300 VAC RMS— 1 m inute


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    PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: E90700

    GNY17-3

    Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
    Text: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI


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    PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 ST1603A C2079 CNY17 CNY17-1: CNY17-2: CNY17-3: GNY17-3 CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor C1243

    Untitled

    Abstract: No abstract text available
    Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


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    PDF TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294

    H11F2 equivalent

    Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
    Text: PHOTO FET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 PACKAGE DIMENSIONS f l DESCRIPTION The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated


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    PDF H11F1 H11F2 H11F3 ST1603A 100FINE ST2062 ST2063 H11F2 equivalent C4615 H11F bv46 8T20 H11F3 R200A HIIFI

    C1685 transistor

    Abstract: C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683
    Text: L y 1 • PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2 PACKAGE DIMENSIONS DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS AC line/digital logic isolator


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    PDF E90700 ST1603A C2079 C1296A c1294 C1685 transistor C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683

    c1247

    Abstract: C1246 c1252 MCT210 Phototransistor with base emitter CI242
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 DESCRIPTION PACKAGE DIMENSIONS j Sl ì u The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.


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    PDF MCT210 ST1603A c2079 MCT210 MCT210-Specified E90700) 10TTI c1247 C1246 c1252 Phototransistor with base emitter CI242

    C1685 transistor

    Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
    Text: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


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    PDF MCT271 ST1603A C2079 E90700 C1682 C1683 C1684 C1685 C1296A C1685 transistor transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271

    Untitled

    Abstract: No abstract text available
    Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    PDF MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294

    Untitled

    Abstract: No abstract text available
    Text: [sQ PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS CNY17F-1 CNY17F-2 CNY17F-3 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. ift Æ f t FEATURES WWW High isolation voltage 5300 VAC RMS— 1 m inute


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    PDF CNY17F-1 CNY17F-2 CNY17F-3 CNY17 CNY17F1: CNY17F2: CNY17F3: E90700 ST1603A CT680

    Untitled

    Abstract: No abstract text available
    Text: [ s o PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. ü l e Su ïl WWW FEATURES & APPLICATIONS 8.89 8.38


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    PDF resistance--10 E90700 ST1603A C2084

    transistor c1713

    Abstract: No abstract text available
    Text: E U PHOTODARLINGTON OPTGCOUPUERS OPTS E L E C 1 S BÜI C S 4N32 4N33 The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar pbotodarlington. • High isolation resistance-—10"ii ■ High dielectric strength, input to output 5300 V RMS 1


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    PDF ST1603A C2884 C1713 transistor c1713

    PFU1

    Abstract: AS-3439
    Text: [ • O PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 DESCRIPTION PACKAGE DIMENSIONS The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î Ä I w t S JU 1 _ L_ _ ip 8.89 8.38 FEATURES 0.2 High isolation voltage


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    PDF MOC8111 MOC8112 MOC8113 MOC8111: MOC8112: MOC8113: E90700 ST1603A inMOC8112, MOC8113 PFU1 AS-3439

    C2079

    Abstract: H11A H11A1 H11A2 H11A3 H11A4 H11A5 ST172
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11A1 H11A2H11A3 H11A4H11A5 PACKAGE DIMENSIONS DESCRIPTION The H11A series consists of a gallium arsenide infrared emitting diode, coupled with a silicon phototransistor in a dual in-line package. FEATURES W W W


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    PDF H11A1 H11A2 H11A3 H11A4 H11A5 c2079 ST1603A E90700 Cto150Â Cto100Â C2079 H11A H11A5 ST172