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    265MM Price and Stock

    Crystek Corporation CCSMA26.5-MM-086-12

    COAX CBL SMA TO SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCSMA26.5-MM-086-12 Bulk 124 1
    • 1 $77.47
    • 10 $63.159
    • 100 $55.0624
    • 1000 $55.0624
    • 10000 $55.0624
    		Buy Now

    Crystek Corporation CCSMA26.5-MM-086-6

    COAX CBL SMA TO SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCSMA26.5-MM-086-6 Bulk 21 1
    • 1 $85.48
    • 10 $66.445
    • 100 $52.6777
    • 1000 $52.6777
    • 10000 $52.6777
    		Buy Now

    Crystek Corporation CCSMA26.5-MM-086-4

    COAX CBL SMA TO SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCSMA26.5-MM-086-4 Bulk 9 1
    • 1 $83.11
    • 10 $64.59
    • 100 $51.1931
    • 1000 $51.1931
    • 10000 $51.1931
    		Buy Now

    Crystek Corporation CCSMA26.5-MM-086-8

    COAX CBL SMA TO SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCSMA26.5-MM-086-8 Bulk 6 1
    • 1 $88.06
    • 10 $68.461
    • 100 $54.2918
    • 1000 $54.2918
    • 10000 $54.2918
    		Buy Now

    Crystek Corporation CCSMA26.5-MM-086-7

    COAX CBL SMA TO SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCSMA26.5-MM-086-7 Bulk 5 1
    • 1 $86.74
    • 10 $67.431
    • 100 $53.4669
    • 1000 $53.4669
    • 10000 $53.4669
    		Buy Now
    Find more 265MM price and stock on Findchips.com

    265MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rf-w3s198ts

    Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
    Text: Feature ◆ ◆ ◆ ◆ P/N: RF-W3S198TS-A41 Viewing angle:140 deg The materials of the LED dice is InGaP AlGaInP and InGaN 1.60mmx1.60mm×0.70mm SMT-LED RoHS compliant lead-free soldering compatible Package Outline 1 2 2 1 3 4 4 3 2 R 1(G) 3(B) 4 ATTENTION


    Original     		PDF RF-W3S198TS-A41 004inch) WI-E-045 rf-w3s198ts JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106

    RF-BUB191TS

    Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106 JESD22-A104 TEST CONDITION K JESD22-A105 JESD22A105
    Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-BUB191TS Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg The materials of the LED dice is InGaN 1.60mmx0.80mm×0.70mm SMT-LED RoHS compliant lead-free soldering compatible


    Original     		PDF RF-BUB191TS 004inch) WI--E--045 RF-BUB191TS JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106 JESD22-A104 TEST CONDITION K JESD22-A105 JESD22A105

    RF-W2SA50TS-A36

    Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
    Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-W2SA50TS-A36 Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg The materials of the LED dice is InGaN, InGaP and AlGaInP 5.30mmx5.00mm×1.60mm SMT-LED RoHS compliant lead-free soldering compatible


    Original     		PDF RF-W2SA50TS-A36 012inch) WI--E--045 RF-W2SA50TS-A36 JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-YURA30TS-AD Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is ALGaInP 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible


    Original     		PDF RF-YURA30TS-AD 008inch) WI--E--045 Y05003

    RF-BNRA30TS-CD

    Abstract: No abstract text available
    Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-BNRA30TS-CD Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is InGaN 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible


    Original     		PDF RF-BNRA30TS-CD 008inch) WI--E--45 B05002 RF-BNRA30TS-CD

    JESD22-A119

    Abstract: RF-INRA30DS-EB JESD22-A108 JESD22-B106 JESD22-A101 JESD22-A103
    Text: Feature P/N: RF-INRA30DS-EB Viewing angle:120 deg The materials of the LED dice is InGaN 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible ◆ ◆ ◆ ◆ Package Outline 2 1 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC


    Original     		PDF RF-INRA30DS-EB 008inch) WI-E-045 JESD22-A119 RF-INRA30DS-EB JESD22-A108 JESD22-B106 JESD22-A101 JESD22-A103

    JESD22-A101

    Abstract: JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
    Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-W2SA30BS-A56 Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is InGaN, InGaP and GaAs 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible


    Original     		PDF RF-W2SA30BS-A56 008inch) WI--E--045 JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106

    RF-WNFA50DS-ED

    Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
    Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-WNFA50DS-ED Company Name: Confirmed By Customer: DATE: APPROVED BY: CHECKED BY: PREPARED BY: DATE: DATE: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is InGaN 5.30mmx5.00mm×1.60mm SMT-LED


    Original     		PDF RF-WNFA50DS-ED WI--E--045 RF-WNFA50DS-ED JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106

    RF-W2SA50TS-A39

    Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
    Text: Feature P/N: RF-W2SA50TS-A39 Viewing angle:140 deg The materials of the LED dice is InGaN, InGaP and AlGaInP 5.30mmx5.00mm×1.60mm SMT-LED RoHS compliant lead-free soldering compatible ◆ ◆ ◆ ◆ Package Outline polarity mark [1] [3] [5] [2] [4] [6]


    Original     		PDF RF-W2SA50TS-A39 012inch) WI-E-045 RF-W2SA50TS-A39 JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106

    RF-GNB191TS-CF

    Abstract: G01036 JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
    Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-GNB191TS-CF Company Name: Confirmed By Customer: DATE: APPROVED BY: DATE: 龙胜 2009-08-26 CHECKED BY: DATE: 谢栋芬 2009-08-26 PREPARED BY: DATE: 贾娟 2009-08-26 Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg


    Original     		PDF RF-GNB191TS-CF 004inch) WI--E--045 G01036 RF-GNB191TS-CF G01036 JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106

    13003

    Abstract: 130030 B 13003 7103 TO-126 fairchild
    Text: TO-126 Tube Packing Data TO-126 Tube Packing Configuration: Figure 1.0 Packaging Description: 60 units per Tube F 113 130030 Bubble Sheet 32 Tubes per box TO-126 parts are shipped normally in tube. The tube is made of PVC plastic treated with anti-static agent.These


    Original     		PDF O-126 A710103105 525mm 360mm 265mm 000cap) 237mm 167mm 13003 130030 B 13003 7103 TO-126 fairchild

    transistor code 458 055

    Abstract: transistor 2001 H1 transistor code 458 Fairchild taping TO-92 2001 TO92 transistor case To 92
    Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 Packaging Description: TO-92 parts are shipped normally in tape. These reeled parts in standard option are shipped with 2,000 units per 14” or 355.6cm diameter reel. This and some other options


    Original     		PDF 395mm 375mm transistor code 458 055 transistor 2001 H1 transistor code 458 Fairchild taping TO-92 2001 TO92 transistor case To 92

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps

    Untitled

    Abstract: No abstract text available
    Text:  35 /,0,1$5<,1 250$7,21 /'*%* *E''56'5$0,QWHJUDWHG0RGXOH ,02' %HQHILWV )($785(6 ''56'5$0'DWD5DWH  DQG0ESV  3DFNDJH  xPP[PP(QFDSVXODWHG %DOO*ULGDUUD\ 3%*$ EDOOV PPSLWFK 9”9&RUH3RZHUVXSSO\


    Original     		PDF 265mm2 1060mm2 625mm2

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply


    Original     		PDF W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of


    Original     		PDF WEDPN16M72V-XBX 16Mx72 128MByte 864-bit 100MHz, 125MHz 100MHz

    W3E64M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz WEDPN4M72V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN8M64V-XBX 8Mx64 125MHz WEDPN8M64V-XBX 64MByte 512Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz WEDPN8M72V-XBX 64MByte 512Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz WEDPN4M64V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN16M72V-XBX 16Mx72 125MHz 128MByte 864-bit 100MHz

    WEDPN4M72V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz, WEDPN4M72V-XBX