270 PHOTOTRANSISTOR Search Results

Phototransistors

Contextual Info: S enso rs Infrared Light Emitting Diodes SIR • SIM — 264 Photointerrupters (RPI • SIU) - 270 Phototransistors Output (Molded Type) Phototransistors (RPM • RPT) - 266 270 Phototransistors Output (Type with case)

C1303

Abstract: LF 358 C1251 C1298 C2079 C2090 MCT272
Contextual Info: DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide Infrared emitting diode is selectively coupled with an NPN silicon phototransistor. t 6.86 .270 6.35 (.250) _ —•—j ‘ 1 8.89 (.350)

Contextual Info: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

C1775

Abstract: DIODE CH71 c1771 C1770 H11DX C2079 C1772 C1774 C2090 H11D1
Contextual Info: GENL INST.Rt OPTOELEK "flfl DE | BÛTDlEfi □□□SÛT3 E | ~ t GENERAL INSTRUMENT PHOTOTRANSISTOR OPTOCOUPLERS P A C K A G E D IM E N S IO N S HI1D1/1Z HI1D2/2Z H11D3/3Z D E S C R IP T IO N r" j 6.86 .270 o WWW 8.89 (.350) 6.35 (.250) t 7.62 (.300) REF

C1685 transistor

Abstract: transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127
Contextual Info: GENL INSTR-i OPTOELEK flfl GÉNÉRAL INSTRUMENT DE | 3ÔT015Ô DOOETbT T | ~ VDE APPROVED p h o to tra n sisto r op toco u p le rs DVE PACKAGE DIMENSIONS [& eg] DESCRIPTION Æi r* { 6.86 .270 6.35 (.250) 0.36 (.014) I 0.20 (.008) O WWW T 8.89 (.350) 7.62

C1318 transistor

Abstract: C1335 transistor transistor C1318 C1317 transistor c1335 c1318 c1316 c1317 C1330 C1251
Contextual Info: GENL INSTRi OP T OE L E K Û6 GENERAL BflTGiafl . 7 . rib rib & ! 6.86 .270 15° M A X 6.35 (.250) 0.36 (.014) —«4 H— I _ 7.62 (.300) REF 8.38 (.330) 2.54{.100)TYP*j 0.20 (.008) I 8.89 (.350) ,- 1.78 (.070) REF / 1.78 (.070) TYP 3.84 (.155) t

C1959

Abstract: ic 2731 transistor c1959
Contextual Info: 88D 02933 DUALITY TECHNOLOGIES CORP flû DT-ty/-gj> I I 7MbbflSl □ □ □ E c133 □ |jl 1.6 mA DUAL MGL2730 HCPL-2730J 0.5 mA DUAL MCL2731 (HCPL-2731) PACKAGE D IM E N S IO N S & f t i Æ) ifl 6.861-270) 6.35 (.250) 0.36 (.014) \ 0.20 (.008) lo IP t ÿ

MCT2E equivalent

Abstract: c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079
Contextual Info: ~ûfl GENL INSTR t OPTOELEK DE 1 30=10150 □ □05'ibl l» T ~ PT"HI'B3 « G E N E R A I! iWRlSMEISTR MCT2E DESCRIPTION PACKAGE DIMENSIONS db f t f t I 6.86 .270 ^ 6.35 (.250) 0.36 (.014) I 0.20 (.008) 7.62 (.300) REF 8.38 (.330) 2Æ4(.100)TYP-*j 15° MAX

high sensitivity reflective phototransistor

Abstract: phototransistor visible light ON2270 ONN2270 reflective photo sensor
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2270 Reflective Photosensor U nit : mm • Outline Mark for indicating anode side C0.5 O N N 2 270 is a sm all, th in re fle ctiv e p h o to se n so r c o n sistin g o f a high efficiency G aA s infrared light em itting diode w hich is integrated

SN72710L

Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4

cli305 optical switch

Contextual Info: CLI305 CLI375 CLI325 CLI355 Optical Switches GENERAL DESCRIPTION — The CLI305 — CLI375 se­ ries are exceptionally rugged optical switches with Valox housings and an epoxy backfill. The infrared emitting diode and the phototransistor/darlington phototransistor

Contextual Info: S ensors Infrared Ught Emitting Diodes SIR * SIM — 264 Phototransistors (RPM • RPT) - 266 PIN Photodiodes (RPM) -267 Photo tCs (RPM) - 267 Photosensitive ICs (RPM) -268

npn phototransistor

Abstract: Silicon NPN Phototransistor TEKT5400S 8239 TSKS5400S
Contextual Info: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

TEMT7000X01

Abstract: J-STD-020D VSMB1940X01 vsmb
Contextual Info: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity

Contextual Info: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity

VSMB1940X01

Contextual Info: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • 20043-1 • • • DESCRIPTION TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 0805 package for surface mounting. Filter bandwidth

NPN TEMT7000X01

Abstract: phototransistor 500-600 nm TEMT7000X01 J-STD-020D VSMB1940X01 radiation sensors
Contextual Info: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

VSMB1940X01

Abstract: J-STD-020D 20594 Q-101
Contextual Info: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

270 Phototransistor

Abstract: TEKT5400S TSKS5400S
Contextual Info: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

PC852XNNSZ0F

Abstract: pc3hu7xyip PC357NJ0000F
Contextual Info: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,

Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm