27281SL Search Results

PC24J4R5

Abstract: Johanson 27273 PC24K080 PC24J1R2 transistor 38W P4446 27261SL johanson 8762 27281SL pc21j4r5
Contextual Info: Giga-Trim Selection Guide Click on the Part Number for Line Drawing Johanson P/N Capacitance Range pF 17273 0.6 to 4.5 27261 27261SL 27263 0.3 to 1.2 27264 27265 27271 27271SL 27273 0.6 to 4.5 27274 27275 27281 27281SL 27283 0.4 to 2.5 27284 27285 27291

Johanson 27273

Abstract: PC24J4R5
Contextual Info: Giga-Trim Capacitor Selection Guide Johanson P/N Dielectric .6 to 4.5 >8 500 Alumina 500 Sapphire Sapphire Sapphire Sapphire Sapphire 17273 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 27291 27291SL 27293

Contextual Info: Giga-Trim Capacitor Selection Guide 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 .3 to 1.2 >5 PC21J1R2 PC22J1R2 PC24J1R2 PC23J1R2 500 0 ± 50 .1-1 >5000 21 0 ± 50 .2-2 >3000 22 0 ± 50 .2-2 >4000 23 0 ± 75

J161 mosfet transistor

Abstract: MOSFET J161 100B6R8JW
Contextual Info: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: gigatrim = [ \ \ \ \_n[ZYWfWY_jehi$

"RF Power Transistor"

Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

TF800BB14-061

Abstract: P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1
Contextual Info: < ] ^  _dZkijho$@e^Wdied^Wibed]X[[dh[Ye]d_p[ZWiW $ J^[jhWZ_j_edYedj_dk[i°

Contextual Info: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband

J299

Contextual Info: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: Giga-Trim Series Figure 3 Dimensions: inches Cap Rjwgs pF m - : A ' - *' c D s (f ' 3 1.2 4 2.5 6 4.5 . 8 - 8.0 27261 27281 27271 27291 0.225 0.225 0.314 0.480 0.075 0.118 0.118 0.118 0.23 0.23 0.23 0.23 0.08 0.08 0.13 0.25 0.04 0.04 0.04 0.04 0.094 0.14

AGR21090E

Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz
Contextual Info: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband

mrf5s21090

Abstract: Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 RF Power Field Effect Transistors MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

MVM010

Abstract: MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG
Contextual Info: Configuration Microelectronics Johanson Vottro -nics Tronser MIL Designation Tekelec II n MTR02X YV 1 1 MTR12X MTR22X l i MTR32X «E». a w MTR42X ea H i U t MTR52X MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 27260 27261 27261SL 27264 27265 27263 P1A P1B P1J

AGR18030EF

Abstract: JESD22-C101A
Contextual Info: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

27271SL

Abstract: 27281SL 27273 27261SL 27291 17273 27293 57283-1 27291SL
Contextual Info: gigatrim = [ \ \ \ \_n[ZYWfWY_jehi$

AN1955

Abstract: ATC100B2R0BT500XT ATC100B9R1CT500XT MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 D2426 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

PC24J2R5

Abstract: JMC 27284
Contextual Info: JOHANSON MANUFACTURING 44E » B DOOOSbB M B ç>Ç- %Z - C>Ç <^$4aM »t£> Tfp<§ .4 to 2.5pF 1?; a s .8 to 8pF ¿T ' GIGA-TRIM CAPACITORS J M C P/N M IL S P E C RANGE PF TC PPM /°C GIGA-TRIM® CAPACITORS M IN. Q @ 250 M H z D IM E N SIO N S IN CHES ADJUSTING

Contextual Info: Preliminary Data Sheet January 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband