27963 Search Results

5ESDV

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 12-02 TWO-PIECE TER M IN AL BLOCK CONNECTORS Plug, Right-Angle, 5.0 mm Centerline Colors - See chart. •Wire Erilry rjH- UL R ating-300 V, 15 A 12-3DAWG Hi 15.5 G 10 —, M O Key Slot Suggested Screw Torque

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)

Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

a888 513

Contextual Info: 2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0759-0100 Previous ADE-208-1469 Rev.1.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter

Contextual Info: 2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 Previous ADE-208-1071 Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings

Contextual Info: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source

Contextual Info: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator

Contextual Info: BB503C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0834-0500 Previous ADE-208-812C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz

Contextual Info: HD74LS165A Parallel-Load 8-bit Shift Register REJ03D0449–0300 Rev.3.00 Jul.15.2005 The LS165A are 8-bit serial shift registers that shift the data in the direction of QA toward QH when clocked. Parallel-in access to each stage is made available by eight individual direct data inputs that are enabled by a low level at the shift /

27913-13

Abstract: veam 27913-13 46740-15P 27914-26 27936 27963 27964-22 27913 27937V 27964-15
Contextual Info: Contact Part Numbers Coupling & Uncoupling Forces MIN. DISENGiIVGING FORCE F80 OUNCES NEWTONS 18-20 1.1 0.3 16-16S 3.6 1 12 5.4 1.5 8 10.8 3 4 14.4 4 30.6 8.5 SHELL SIZE 10SL 14S 16S 16 18 20 22 24 28 32 36 40 COUPLING UNCOUPLING KgCm In Lb KgCm In. Lb 13.8

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMX2492, LMX2492-Q1 SNAS624 – MARCH 2014 LMX2492/LMX2492-Q1 14 GHz Low Noise Fractional N PLL with Ramp/Chirp Generation 1 Features 3 Description • • • • • •

H5N2501LD

Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
Contextual Info: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

rjk5020

Abstract: RJK5020DPK-E PRSS0004ZE-A RJK5020DPK SC-65
Contextual Info: RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0100 Rev.1.00 Sep. 23, 2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate

cs 2648

Abstract: 2648f modeling of ac dc ac boost converter chapter bosch servo module SM 10/20 723 ic internal diagram HITACHI microcontroller H8S family 2DT8 scr driver dc motor speed control 1.5 CSTN LCD bosch sm ac drive
Contextual Info: REJ09B0257-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2646 Group, H8S/2646R F-ZTAT,

HAT2085R

Contextual Info: HAT2085R Silicon N Channel MOS FET High Speed Power Switching REJ03G1181-0200 Previous: ADE-208-1232 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> )

pcr 406 j

Abstract: BUT 444 EQUIVALENT IR 444 2C GRC 406 4-PIN 357 bl p76 EM 235 setting Nippon capacitors
Contextual Info: REJ09B0068-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/36064Group Hardware Manual

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid