27E TRANSISTOR Search Results

AT3904

Abstract: raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209
Contextual Info: RAYTHEON/ SEMICONDUCTOR 27E D • 7S^73bD DQDTBbT Raytheon Company Semiconductor Division S ■ 7^27-9*? Raytheon Transistor Dice Catalog I RAYTHEON/ SEMICONDUCTOR 27E D ■ TSTVBbO 0007370 1 ■ J-S7- 11 Features Shipping Formats ■ Wafer size 2'A inches, 3 inches

GE6062

Abstract: GE6060 ge6061
Contextual Info: HARRIS SEMICOND SECTOR 27E » • 43QHE,.7]i 0020415 2 « H A S !_ File Number Power Transistors GE6060,GE6061,GE6062 15.85 - " r '3 3 '2 ^ 1 ' 20-Ampere N-P-N Darlington Power Transistors

RCA8766A

Contextual Info: HARRIS SEMICOND SECTOR 27E T> • 43G2271 QÛ20512 D ■ HAS Power T ran sisto ,_ RCA8766 Series File Number T - 3 10-A m pere N-P-N M onolithic Darlington Power Transistors

2N6259

Abstract: 2n3773 2N3773A 2N4348 2N 6259 2n3773m
Contextual Info: Power Transistors File Number 526 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D High-Voltage, High-Current Power Transistors Broadly Applicable Devices for Industrial and Commercial Use 43Ü5571 ÜGnaSM 3 « H A S T-33-I5 TERMINAL DESIGNATIONS T " I- 3

transistor C2075

Abstract: g10 smd transistor SMD Transistor 1c
Contextual Info: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from

mca2255

Abstract: smd TRANSISTOR code AJ
Contextual Info: DUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • TMbtaSl 0003435 VDE APPROVED PHOTODARLINGTON OPTOCOUPLERS _ T - H I ~ 2 r MCA2230Z MCA2231Z MCA2255Z PACKAGE DIMENSIONS { ft rih Æj DESCRIPTION The MCA2230, MCA2231 and MCA2255 are

2N2S05

Abstract: 2n2510 2N2511
Contextual Info: INTEX/ SEMITRONICS CORP jEinitron 27E D • HflbTEHb 0000201 M I 7W -¿/ discrete devices SEMICONDUCTORS Semitronics Corp. metal can transistors cont'd silicon small signal transistors M i ximum Ratini Onice Type Package 2N2351A NPN TO 2N2352 NPN TO 46 46

Contextual Info: microseui corp/power 27E D • tillSTSQ ÜDDGS31 T ■ PTC T -33-/3, TSA65520 Power Transistor Chip, NPN 55 A, 200 V, tf= 0.1 ps Planar Epitaxial Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils Applications:

diode 27e

Abstract: M30ES GE5060
Contextual Info: HA RR IS S E M I C O N D S E C T O R 27E » • M30ES.71 QOEGMO'Î 7 M H A S I - File Number 15.84 Power Transistors. GE5060, GE5061, GE5062 20-Ampere N-P-N Darlington Power Transistors

Contextual Info: HARRIS SEMICOND SECTOR 27E D M302271 D02D54Q 5 • H A S B P ow er T ra n s is to rs _ TIP31, TIP31A, TIP31B, TIP31C File Number 991 •-P33-1I Epitaxial-Base, Silicon N-P-N

S7E SMD TRANSISTOR

Contextual Info: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES • 74bfciä51 Q0G3S4S 7 PHOTOTRANSISTOR OPTOCOUPLER T—41—83 MCT275 DESCRIPTION PACKAGE DIMENSIONS The MCT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

RJH6674

Abstract: CA3725 Harris RJH6675 2N6674 2N6675 RJh*6674 27e transistor l0319 2N667S RJH6675
Contextual Info: T Power Transistors SEMICOND SECTOR - IB File Number 1164 4302271 002DGS4 7 « H A S 2N6674, 2N6675, RJH6674, RJH6675 HARRIS - * 3 27E 10-A SwitchRlaX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage

T1P32B

Contextual Info: ^ 33- H Power Transistors TIP32, TIP32A, TIP32B, TIP32C HARRIS SEMICOND SECTOR File N um ber 27E D H 4302571 0050344 987 2 • HAS Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Am plifier and High-Speed-Switching Applications Fea tu re s: ■

2N1227

Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
Contextual Info: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation

TL235

Contextual Info: HARRIS SEMICOND SECTOR m 27E D 43022;?! 0Ü2Q4GS T B IHAS _ 1_ _ P o w e r Transistors D73K3D1, D73K3D2 File Num ber 15.58 T - 2 3 '3 \ 3-Ampere P-N-P Power Darlington Transistors Features: • Operates from 1C without predriver

Contextual Info: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

pn5114

Abstract: PN5432
Contextual Info: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max

Contextual Info: ._ Power Transistors HARRIS SEMICOND F ile N u m ber 27E SECTOR D 4302271 15.9 00202*15 7 « H A S D42C Series " '- 3 3 — 0 7 3-Ampere Silicon N-P-N Power Transistors Com plem entary to the D 43C Series TERM IN AL DESIGNATIONS Features:

2N924

Abstract: IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122
Contextual Info: INTEX/ SEMITRONICS CORP 27E D • MfibTEMb Q0D027Ö 4 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon small signal transistors general purpose — alloy i f j 1#* 1 1 i Polarity ! ì 2H32M i 2N3278 ‘ 1ÎN32tk <

2N1203

Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
Contextual Info: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation

Contextual Info: HARR IS S E M I C O N D SECTOR 27E » • 4302271 0Q2QM?b Q * H A S Power T ra n sis to rs - MJE13009 File Number 15.92 T -3 3 - »3 High-Speed Silicon N-P-N

2N5954

Abstract: M9192 2N5955
Contextual Info: Power Transistors File Num ber 2N5954, 2N5955, 2N5956 675 HARR IS S E M I C O N D SE CT OR 27E D 4302271 OGl'nO? T Silicon P-N-P Medium-Power T ransistors 7 «HAS " - 3 3 ' TERMINAL DESIGNATIONS G eneral-Purpose Types for Sw itching Applications Features:

Contextual Info: MICROSEMI CORP/POQIER 27E D • bllSìSG Q00G532 1 « P T C T - 33-/3 TSB71020 I*TC TECHNOLOGY Power Transistor Chip, NPN 10 A, 200 V, tf = 35ns ■ Planar Epitaxial ■ C ontact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

2N3614

Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
Contextual Info: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation