28C256-15 EEPROM Search Results

EEPROM 28C256

Abstract: 28C256 microchip 28C256 28 pin 28c256 28C256-90
Contextual Info: Military St 28C256 M icro ch ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION • Fast read access time—90,120,150 ns maximum • CMOS Technology for low power dissipation —80 mA active —350 |xA standby • Fast byte-write time—3 ms or 10 ms

28C256B

Abstract: EEPROM 28C256 28C256 microchip
Contextual Info: & 28C256 M ic r o c h ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 90, 120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA A ctive - 150nA Standby • Fast W rite Cycle Times

1N914

Abstract: 28C256 28C256-12 28C256-15 CAT28C256 CAT28C256NI-15T
Contextual Info: CAT28C256 256K-Bit Parallel EEPROM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer –Active: 25 mA max

28 pin 28c256

Abstract: CAT28C256 1N914 28C256 28C256-12 28C256-15 CAT28C256NI-15T
Contextual Info: CAT28C256 32K-Bit Parallel EEPROM FEATURES • Fast Read Access Times: 120/150ns ■ Hardware and Software Write Protection ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: –1 to 64 Bytes in 5ms –Page Load Timer –Active: 25 mA Max.

26c256

Abstract: EEPROM 28C256 EEPROM 26C256 26c256-10 28C256 2BC256-15 28C256-07 28C256-10 ST 28C256
Contextual Info: > w REVISIONS |VM DATE CN oucfttmo* *HT it w tM S \'r S, x 006046 a x . PRELIMINARY CUSTOMER PROCUREMENT SPECI FI CA TIO N 28C236 236K SHKCT 1-10 LA *T«V 8 H IC T LAST ft V OISTMltUTlOM Ltrr PLANT INbI K U M SUPERSEDES M r □ v r MICROELECTRONICS OIIOUP

1N914

Abstract: 28C256 CAT28C256 MS-011 MS-016
Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

28C256 seeq

Abstract: EEPROM 28C256 seeq 28C256
Contextual Info: 28C256 Technology, Incorporated Timer E2 256K Electrically Erasable PROM August 1992 Features Military, Extended and Commercial Temperature Range • -5 5 °C to +125° C Operation Military . -4 0 ° C to +85°C Operation (Extended) • 0°C to +70°C Operation (Commercial)

Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

CAT28C256L12

Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

AM28C256

Abstract: 28C256-250 am2864a pinout data 28C256 28C256-300 28C256-350 am2864
Contextual Info: Am28C256 32K x 8 Electrically Erasable PROM Am28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • - 100 /uA power-down current 64-byte page write Software-write protection Minimum endurance of 10,000 write cycles per byte with a ten year data retention

KM28C256-15

Abstract: 28c256 samsung
Contextual Info: KM28C256 CMOS EEPROM 32Kx8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte W rite & Page W rite — Single TTL Level W rite Signal — Internal Address and Data Latch

Contextual Info: KM28C256 CMOS EEPROM 3 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write — Single TTL Level Write Signal — Internal Address and Data Latch

AT28C256 rad

Abstract: 197a8 radiation hardened prom WY smd transistor
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.8 µm Process • Read/Write Cycle Times ≤45 ns, (TC = -55°C to 125°C) • Total Dose Hardness through 2 × 105 rad(Si)

prom 238A790

Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

197A807

Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

Contextual Info: MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's MM28C010 is a CMOS 5V only, 128Kx 8 Elec­ trically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC

Contextual Info: Am28C256 3 2Kx8 Electrically Erasable PROM Am28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 1 0 0 pA power-down current

sumitomo epoxy 6600

Abstract: sumitomo epoxy 1143 at27c256 data retention AT29LV020 sumitomo silver epoxy 28BV256 0c002 ATMEL AT27lv256 AT49*512 AT28C256
Contextual Info: Parallel EEPROM 256Kbit Qualification Summary § Component Design & Construction Description § Test Summary Oper Life Test Data Retention Endurance Rel Humidity Autoclave Temp Cycle ESD Latch-up Electrical Dist./Char. available per request Plastic Package (TSOP, SOIC, PLCC)

Contextual Info: 11E » SEEÛ TECHNOLOGY INC • a i n S 3 3 QQOEbTÔ fl MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features SEEQ's MM28C010 is a CMOS 5 V only, 128Kx8Electrically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K

28C256-12

Abstract: CAT28C256 EEPROM 28C256 28C256 28C256-15 CAT28C256NI-15T 1N914 28C256-15 eeprom
Contextual Info: H CAT28C256 EE GEN FR ALO 256K-Bit Parallel EEPROM LE A D F R E ETM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer

free circuit eeprom programmer

Contextual Info: CAT28C256 256K-Bit PARALLEL EEPROM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer –Active: 25 mA max

1N914

Abstract: 28C256 28C256-12 28C256-15 CAT28C256 CAT28C256NI-15T
Contextual Info: H EE GEN FR ALO CAT28C256 256K-Bit Parallel EEPROM LE A D F R E ETM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer

am28c256

Contextual Info: Am28C256 3 2 K x 8 Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 100 /uA power-down current 64-byte page write

CAT28C257

Abstract: 1N914 28C256 CAT28C257NI-90T
Contextual Info: H EE GEN FR ALO CAT28C257 256K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Automatic page write operation: ■ Fast read access times: 120/150 ns –1 to 128 Bytes in 5ms –Page load timer ■ Low power CMOS dissipation: –Active: 25 mA max. –Standby: 150 µA max.