28F01090 Search Results

QD03-2

Contextual Info: CAT28F010 L _ V ^ S m T " CAT2 8 F010 Licensed Intel 1 Megabit CMOS Flash Memory Second S O U rc e FEATURES • Commercial, Industrial and Automotive Tenv perature Ranges ■ Fast Read Access Time: 70/90/120/150 ns ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels

Contextual Info: CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, industrial and automotive ■ Fast read access time: 90/120 ns temperature ranges ■ Low power CMOS dissipation: ■ On-chip address and data latches –Active: 30 mA max CMOS/TTL levels

TN28F010

Abstract: 29020
Contextual Info: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

28F010

Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
Contextual Info: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP

1N914

Abstract: 28F010 28F010-12 CAT28F010
Contextual Info: H CAT28F010 EE GEN FR ALO 1 Megabit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES • Commercial, industrial and automotive ■ Fast read access time: 90/120 ns temperature ranges ■ Low power CMOS dissipation: ■ On-chip address and data latches

CAT28F010

Abstract: 28F010-70 1N914 28F010-12 Nippon capacitors
Contextual Info: CAT28F010 CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem- ■ Fast Read Access Time: 70/90/120 ns perature Ranges ■ Low Power CMOS Dissipation: ■ On-Chip Address and Data Latches

26f010

Abstract: 28F010-12 CAT28F010 bdt 95a
Contextual Info: s CAT28F010 CAT2 8 F0 1 0 Licensed Intel 1 Megabit CMOS Flash Memory S econd S o u rc e FEATURES • Fast Read Access Time: 70/90/120/150 ns ■ Commercial, Industrial and Automotive Tem­ perature Ranges ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

28F010N

Abstract: 28F01090 1N914 28F010-12 CAT28F010
Contextual Info: C lA T CAT2 8 F010 A 1 _ Y s ~ r licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Temperature Ranges ■ Fast Read Access Time: 70/90/120 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

29020

Contextual Info: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

PPH 2222 36

Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

29020

Contextual Info: i n y 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash E lectrical C h ip -E rase — 1 S ec o n d T yp ic al C h ip-E rase Q uick Pulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 2 S ec o n d C h ip -P ro g ram • ■ — M axim um L atch -U p Im m u n ity

29F020

Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
Contextual Info: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program

PLD intel

Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program

Contextual Info: I II II C •■III R T R ü r S T S E M / C O N O U C T O R CAT28F010 1 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 90/120/150 ns Commercial and Industrial Temperature Ranges ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

intel 28F010

Abstract: N28F010-120 28F010 80C186 E28F010
Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for

Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program

Contextual Info: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp

Contextual Info: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 (iA maximum standby current

Contextual Info: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 ps typical byte-program — 100 pA maximum standby current

29F020

Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface

intel 28F010

Abstract: 28f01o-120 N28F010-120 28F010 80C186 E28F010 N28F010 P28F010 28f010-200 29020
Contextual Info: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

AM28F010

Contextual Info: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 ps typical byte-program — 100 pA maximum standby current

TN28F010

Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

IS28F010

Contextual Info: M I S 2 8 F 0 1 0 _ _ _ 131,072 x 8 CMOS FLASH MEMORY JULY 1997 FEATURES • High performance - 45 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 fiA maximum standby current