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    29102BJA Search Results

    29102BJA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    29102BJA Intersil 2K x 8 CMOS RAM Original PDF
    29102BJA Intersil 2K x 8 CMOS RAM Original PDF
    29102BJA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    29102BJA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a5324

    Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
    Text: HM-6516 TM 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    Original
    PDF HM-6516 HM-6516 55mW/MHz a5324 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9

    HM-6516-9

    Abstract: 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9
    Text: HM-6516 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    Original
    PDF HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9

    HM-6516-9

    Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
    Text: HM-6516 S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the


    Original
    PDF HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9

    Untitled

    Abstract: No abstract text available
    Text: Ç £\ H A R R HM-6516 I S S E M I C O N D U C T O R 2K J a n u a ry 1992 Features 8 CMOS RAM X Description • Low Power Standby.275|iW Max. • Low Power O peration.55mW/MHz Max. • Fast Access Time. 120/200ns Max.


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    PDF HM-6516 55mW/MHz 120/200ns

    HM6516

    Abstract: No abstract text available
    Text: HM-6516 fü HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Description Features Low Power Standby. 2 7 5 Max Low Power O p e ratio n . 55mW/MHz Max Fast Access Time. . 120/200ns Max


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    PDF HM-6516 55mW/MHz 120/200ns HM-6516 HM6516

    EH18

    Abstract: HM-6516-9 hm6516-9
    Text: HARRIS H M -6 5 1 6 S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275|iW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the


    OCR Scan
    PDF HM-6516 HM-6516 EH18 HM-6516-9 hm6516-9

    HM-6516-9

    Abstract: HM6516-9 HM1-6516 6516-9 HArris 6516 HM-6516B-9
    Text: m U v HM-6516 H A R R IS S E M I C O N D U C T O R 2K January 1992 8 CMOS RAM X Features Description • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use ot complementary MOS design techniques. This low power is further


    OCR Scan
    PDF HM-6516 HM-6516 HM-6516-9 HM6516-9 HM1-6516 6516-9 HArris 6516 HM-6516B-9

    6516

    Abstract: 6516-9
    Text: HM-6516 Semiconductor 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275^W Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of com plem entary MOS design techniques. This low


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    PDF HM-6516 HM-6516 6516 6516-9

    Untitled

    Abstract: No abstract text available
    Text: HM-6516 HARRIS S S E M I C O N D U C T O R 2K x 8 CMOS RAM August 1996 Description Features • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


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    PDF HM-6516 HM-6516 M3D2271 bfi275

    L1129

    Abstract: HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516 HM-6516-9 HM1-6516
    Text: HM-6516 HARRIS æ S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power S tan db y. 275|aW Max • Low Power O p e ra tio n . 55mW /MHz Max • Fast Access T im e. 120/200ns Max


    OCR Scan
    PDF HM-6516 275nW 55mW/MHz 120/200ns HM-6516 L1129 HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516-9 HM1-6516

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


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    PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40