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    8403607JA Search Results

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    8403607JA Price and Stock

    Rochester Electronics LLC 8403607JA

    IC SRAM 16KBIT PARALLEL 24CERDIP
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    DigiKey 8403607JA Bulk 4
    • 1 -
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    Harris Semiconductor 8403607JA

    2K X 8 CMOS RAM '
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    Rochester Electronics 8403607JA 55 1
    • 1 $72.46
    • 10 $72.46
    • 100 $68.11
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    8403607JA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    8403607JA Intersil SRAM Chip, CMOS Static RAM Original PDF
    8403607JA Intersil 2K x 8 CMOS RAM Original PDF
    8403607JA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    8403607JA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a5324

    Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
    Text: HM-6516 TM 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    Original     		PDF HM-6516 HM-6516 55mW/MHz a5324 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9

    HM-6516-9

    Abstract: 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9
    Text: HM-6516 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    Original     		PDF HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9

    QP7C128A

    Abstract: QP6116A 8403609XA IDT6116LA90EB ns8002 8403601ja 84036143A IDT6116LA45L32B QP6116A-35DMB qml-38535
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA Change to vendor similar part number for vendor CAGE number 61772 for devices 08KX, 09KX, 10KX, 11KX, 12KX, 13KX, 14KX, 15KX, and 16KX. Remove vendor CAGE number 61772 from devices 08YX, 09YX, 10YX, 11YX, 12YX, 13YX, 15YX, and 16YX. Change to vendor


    Original     		PDF 8403616YA QP7C128A QP6116A 8403609XA IDT6116LA90EB ns8002 8403601ja 84036143A IDT6116LA45L32B QP6116A-35DMB qml-38535

    L6116FMB90

    Abstract: ns8002 qml-38535 CY6116A-55DMB 8403607ZA HM1-65162 84036103A IDT6116LA120EB IDT6116LA90EB 15KX
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA Change to vendor similar part number for vendor CAGE number 61772 for devices 08KX, 09KX, 10KX, 11KX, 12KX, 13KX, 14KX, 15KX, and 16KX. Remove vendor CAGE number 61772 from devices 08YX, 09YX, 10YX, 11YX, 12YX, 13YX, 15YX, and 16YX. Change to


    Original     		PDF

    HM-6516-9

    Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
    Text: HM-6516 S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the


    Original     		PDF HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA

    Untitled

    Abstract: No abstract text available
    Text: Ç £\ H A R R HM-6516 I S S E M I C O N D U C T O R 2K J a n u a ry 1992 Features 8 CMOS RAM X Description • Low Power Standby.275|iW Max. • Low Power O peration.55mW/MHz Max. • Fast Access Time. 120/200ns Max.


    OCR Scan     		PDF HM-6516 55mW/MHz 120/200ns

    HM6516

    Abstract: No abstract text available
    Text: HM-6516 fü HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Description Features Low Power Standby. 2 7 5 Max Low Power O p e ratio n . 55mW/MHz Max Fast Access Time. . 120/200ns Max


    OCR Scan     		PDF HM-6516 55mW/MHz 120/200ns HM-6516 HM6516

    EH18

    Abstract: HM-6516-9 hm6516-9
    Text: HARRIS H M -6 5 1 6 S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275|iW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the


    OCR Scan     		PDF HM-6516 HM-6516 EH18 HM-6516-9 hm6516-9

    HM-6516-9

    Abstract: HM6516-9 HM1-6516 6516-9 HArris 6516 HM-6516B-9
    Text: m U v HM-6516 H A R R IS S E M I C O N D U C T O R 2K January 1992 8 CMOS RAM X Features Description • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use ot complementary MOS design techniques. This low power is further


    OCR Scan     		PDF HM-6516 HM-6516 HM-6516-9 HM6516-9 HM1-6516 6516-9 HArris 6516 HM-6516B-9

    6516

    Abstract: 6516-9
    Text: HM-6516 Semiconductor 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275^W Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of com plem entary MOS design techniques. This low


    OCR Scan     		PDF HM-6516 HM-6516 6516 6516-9

    Untitled

    Abstract: No abstract text available
    Text: HM-6516 HARRIS S S E M I C O N D U C T O R 2K x 8 CMOS RAM August 1996 Description Features • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    OCR Scan     		PDF HM-6516 HM-6516 M3D2271 bfi275

    L1129

    Abstract: HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516 HM-6516-9 HM1-6516
    Text: HM-6516 HARRIS æ S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power S tan db y. 275|aW Max • Low Power O p e ra tio n . 55mW /MHz Max • Fast Access T im e. 120/200ns Max


    OCR Scan     		PDF HM-6516 275nW 55mW/MHz 120/200ns HM-6516 L1129 HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516-9 HM1-6516

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40