296 MOS FET Search Results

mg15g6em1

Abstract: equivalent MG15G6EM1
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG15G6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in nan MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source OS Resistance

Contextual Info: TC40107BP C*MOS DIGITAL INTEGRATED CIRCUIT SILICO N M ONOLITHIC TC40107BP DUAL 2-INPUT NAND BUFFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,

transistor A114

Abstract: transistor C101 AGR19090E AGR19090EF AGR19090EU JESD22-A114
Contextual Info: Preliminary Product Brief May 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

Contextual Info: Preliminary Product Brief April 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

Contextual Info: Preliminary Product Brief November 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

c101 TRANSISTOR

Abstract: transistor A114 AGR19060E transistor C101 AGR19060EF AGR19060EU JESD22-A114
Contextual Info: Preliminary Product Brief May 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Product Brief April 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

Contextual Info: Preliminary Product Brief March 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Product Brief April 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal

CDM 82

Contextual Info: Preliminary Product Brief April 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal

Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

2SK1374

Contextual Info: Silicon MOS FETs Small Signal 2SK1374 Silicon N-Channel MOS FET For switching (0.425) unit: mm 0.3+0.1 –0.0 • Features ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode ● Allowing 2.5V drive 0.15+0.10

Contextual Info: MOSFET MODULE PD7M441H / PD7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

2SK511

Abstract: 296 mos fet ED44
Contextual Info: bl E D 44<ìb2DS DG13073 OST « H I T 4 2SK511 H I T A C H I / OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER i n • FEATURES • Superior High Frequency Characteristics. • Low Input and Output Capacitance.

Contextual Info: Product Brief June 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

"RF Power Amplifier"

Abstract: AGERE AGR18030E AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A
Contextual Info: Product Brief April 2004 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: Product Brief November 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

k1304

Contextual Info: 2SK1304 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device — C an be driven from 5 V source • Suitable for m otor drive, D C -D C converter, pow er sw itch and solenoid drive

rl120n

Abstract: TC40107B TC40107BP
Contextual Info: TC40107BP C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC40107BP DUAL 2-INPUT NAND B U FFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,

Contextual Info: Product Brief August 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

LV5808MX

Abstract: CDRH105RNP-100NC Q117 SBM30-03 LV5808M 370khz
Contextual Info: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode

Contextual Info: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode