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    Micron Technology Inc M29F002BT70K6E

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    Micron Technology Inc M29F002BB70K6E

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    Infineon Technologies AG AM29F002BT-55JF

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    Honeywell Sensing and Control MPX29F-002

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    Macronix International Co Ltd MX29F002TQC-12

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    Bristol Electronics MX29F002TQC-12 8,640
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    29F002 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    29F002 Advanced Micro Devices 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory Original PDF
    29F002 STMicroelectronics 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory Original PDF

    29F002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    27C32

    Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
    Text: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512


    Original     		PDF 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 27C32 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a

    Untitled

    Abstract: No abstract text available
    Text: 29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%


    Original     		PDF MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte JUN/11/2002 PM0547

    29F002

    Abstract: A1317 AS29F002B-120SC
    Text: High Performance 256Kx8 5V CMOS Flash EEPROM 29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)


    Original     		PDF AS29F002 29F002 A1317 AS29F002B-120SC

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


    Original     		PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    XX02H

    Abstract: 29F002T FHD 100 D
    Text: CAT29FN002 Advance Information Advance Information CAT29FN002 2 Megabit CMOS 5V Only Sectored Flash Memory FEATURES • 100,000 Program/Erase Cycles and 10 Year ■ Fast Read Access Time: 90/120 ns Data Retention ■ Sectored Architecture: ■ End of Program/Erase Cycle Detection


    Original     		PDF CAT29FN002 16-KB 32-KB 64-KB 32-pin B1-1635 XX02H 29F002T FHD 100 D

    29F002T

    Abstract: No abstract text available
    Text: 29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%


    Original     		PDF MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte JUN/14/2001 PM0547 29F002T

    Untitled

    Abstract: No abstract text available
    Text: 29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%


    Original     		PDF MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte 30ms-- 80us-- 100us PM0547

    winbond bios

    Abstract: 49F002 Winbond Electronics WINBOND Phoenix Bios IC pin Number 29F002 W29C020C W49F002
    Text: Application Note-03 2M FLASH COMPATIBILITY APPLICATION NOTE GENERAL DESCRIPTION Due to Winbond 2 Mega Flash supply change, W29C020C part has been replaced by W49F002 part. In this change, customers should notice the following engineering issues. RESET Pin Connection Issue


    Original     		PDF Note-03 W29C020C W49F002 W29C020C, winbond bios 49F002 Winbond Electronics WINBOND Phoenix Bios IC pin Number 29F002

    Untitled

    Abstract: No abstract text available
    Text: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%


    Original     		PDF MX29F022/022NT/B 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte PM0556 JUN/14/2001 JUN/11/2002 NOV/11/2002

    M29F002

    Abstract: M29F002B M29F002T PDIP32 PLCC32 TSOP32 HFNC
    Text: W # S C S -T H O M S O N k7 # . MiniamigmaainsiiaMnfBg M 29F002T 29F002B 2 Mb x8, Block Erase SIN G LE SUPPLY FLASH M EM O RY • 5V ± 1 0 % SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME: 1 0 |iS typical


    OCR Scan     		PDF M29F002T M29F002B M29F002T: M29F002B M29F002T, TSOP32 M29F002 PDIP32 PLCC32 HFNC

    1N914

    Abstract: M29F002T PDIP32 PLCC32
    Text: w , SGS-THOMSON k7 #» RitlDÊlMIlilLIKËinSMQtÊS M 29F002T 2 Mb 256K x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical


    OCR Scan     		PDF M29F002T PDIP32 PLCC32- PLCC32 1N914 M29F002T PDIP32 PLCC32

    1N914

    Abstract: M29F002T PDIP32 PLCC32
    Text: w , SGS-THOMSON M 29F002T k7 #» RitlDÊlMIlilLIKËinSMQtÊS 2 Mb 256K x 8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical


    OCR Scan     		PDF M29F002T PDIP32 PLCC32- PLCC32 1N914 M29F002T PDIP32 PLCC32

    M29F002T

    Abstract: PDIP32 PLCC32
    Text: w - SCS-THOMSON k7 # . IM [MDiHI ènnMPM]D(§Ii M 29F002T 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    OCR Scan     		PDF M29F002T PDIP32 M29F002T PDIP32 PLCC32

    IC 555 architecture

    Abstract: No abstract text available
    Text: AMDH Am29LV001 B 1 Megabit 128 K * 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■


    OCR Scan     		PDF Am29LV001 IC 555 architecture

    29f002tc

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 2M 256K x 8 BIT 29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands


    OCR Scan     		PDF MBM29F002T -70/-90/M F002B 32-pin F9811 29f002tc

    29053

    Abstract: No abstract text available
    Text: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation


    OCR Scan     		PDF 1024K 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B 28F004/400BX-T/B AP-604 AP-617 AB-57 29053

    Untitled

    Abstract: No abstract text available
    Text: — 29F002NT/29F002NB AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands


    OCR Scan     		PDF Am29F002NT/Am29F002NB 32-pin F002NT/Am29 F002N 16-038FPO-5 16-038-TSOP-2

    A1317

    Abstract: AS29 120PI
    Text: Preliminary information •■ 29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )


    OCR Scan     		PDF AS29F002 256KX8 256Kx8 mo2B-120T1C AS29F002B-120T1I AS29F002T1-120T1C AS29F002T1-120T1I 32-pin AS29F002B-55PC AS29F002B-70PC A1317 AS29 120PI

    ITT 435

    Abstract: .5555b 29F002 18-SO AS29 a37al 1L400 29F002-S5 itt435 120PI
    Text: « H ig h p e rfo rm a n ce 256K X 8 5 V CMOS Flash EEPROM 29F002 A 2J>6Kx8 CMOS Flash EEPROM Prelim inary inform ation Features • O r g a n iz a tio n : 2 5 6 K x 8 • S e c to r a r c h ite c tu r e - O n e 16K; tw o 8K; o n e 32K ; a n d th re e 64K b y te secto rs


    OCR Scan     		PDF AS29F002 Z56KX8 256KX8 256Kx8 HardwS29F002TI -I20T1I 32-pin AS29F002B-S5PC AS29F002B-70PC AS29F002B-70PI ITT 435 .5555b 29F002 18-SO AS29 a37al 1L400 29F002-S5 itt435 120PI

    P55i

    Abstract: No abstract text available
    Text: •«}] Y U N D A l 29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and


    OCR Scan     		PDF HY29F002 32-Pin HY29F002 P55i

    Untitled

    Abstract: No abstract text available
    Text: AMDH 29F002B/29F002NB 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements


    OCR Scan     		PDF Am29F002B/Am29F002NB Am29F002

    Untitled

    Abstract: No abstract text available
    Text: — 29F002T/29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands


    OCR Scan     		PDF Am29F002T/Am29F002B 32-pin F002T/Am29 F002B

    a1601

    Abstract: AM29F002BT
    Text: AMD£t Vol t - onl y 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory Flash DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 Volt-only operation for read, erase, and program operations — Embedded Program algorithm automatically


    OCR Scan     		PDF Am29F002B/Am29F002NB 32-pin a1601 AM29F002BT

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AM D i i 29F002/29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations


    OCR Scan     		PDF Am29F002/Am29F002N 29F002 29F002N 29F002/Am 29F002N