29F0407 Search Results

s29f

Contextual Info: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

80c42

Abstract: 82C42 siemens J146 80c42c 82c42 via cga to vga converter circuits siemens s35 lcd smd 39a diode zener B34AB amd elan sc300
Contextual Info: Module Élan386_3 FORTH-SYSTEME GmbH Postfach 11 03 Küferstr. 8 l D-79200 Breisach a. Rhein l D-79206 Breisach a. Rhein 07667 908-0lFax ( Module Élan386_3 (C) Copyright 1998: FS FORTH-SYSTEME GmbH Postfach 1103

MX29F040QC-70

Abstract: MX29F040 29F040-70 29F040 555H MX29F040QC-55 29F040-55
Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

Contextual Info: INDEX ADVANCED INFORMATION MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

Contextual Info: I l i ^ h l*i i loi i n ,iih c S I 2k x X r>V C M O S Ma sh MiPKOM •■ \ S 2 >M 40 A S I ?.KX<S CMOS f ldsli I I f'KOM Preliminary information Features • Low power consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t

00D05

Abstract: AS29F040 29F040 29F040-70
Contextual Info: H ig h P e r f o r m a n c e 512KX8 S V C M O S F la s h EEPRO M « II J J i A S29F040 5 1 2 K X 8 CMOS Flash EEPROM Preliminary information Features • Organization: 5 1 2 Kx 8 • Sector architecture • Low pow er consum ption - 30 m A m a x im u m rea d c u rre n t

Macronix marking

Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

1702 eprom programmer

Abstract: TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702
Contextual Info: High Performance 512Kx8 5V CMOS Flash EEPROM AS29F040 512K×8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512K×8 • Sector architecture - 30 mA maximum read current - 60 mA maximum program current - 50 µA typical standby current

29f040

Abstract: TMS29VF040 29F040-70 TMS29F040 TMS29LF040
Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820C – APRIL 1996 – REVISED JUNE 1998 D Single Power Supply: 5 V ± 10% D D D D D D D A12 A15 A16 A18 VCC W A17 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 3 2 1 32 31 30 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 A14

GA1030

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY . • • • • • • • • • • SMJS820B - APRIL 1996 - REVISED NOVEMBER 1997 Single Power Supply 5 V ± 10% - 3.3 V ± 0.3 V - See ’29LF040/ 29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LFO40/&#39;29VFO4O

Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

tsc701

Abstract: sparclet pia7 sensor AUI isolation barrier M65656 V110
Contextual Info: TSC701 Advanced Communication Controller User’s Manual - 1996 TSC701 This design guide provides no information regarding delivery conditions and availability. Informations contained in specification charts are meant for product description but not as assured characteristics in the legal sense.

29F040C

Abstract: A16HR M29F040CT90 M29F040CF90 M29F040IF70
Contextual Info: Order this docum ent by M29F040/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F040 Advance Information 4M CMOS Sector Erase Flash Memory PLCC CASE 989A -01 The M29F040 is a 4M, 5 V-only, sector erase flash memory organized as 512K bytes of 8 bits each. The M29F040 is offered in JEDEC-standard 32-pin packages.

Maxim 17113

Abstract: 29F040 29F040 equivalent
Contextual Info: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — M inimizes system level power requirements ■ ■ Em bedded Program Algorithm s

3251b

Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
Contextual Info: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands

s2-1040s

Abstract: AS29F040-120LC 29F040 29F040-70 AS29F040 AS29F040-55TC 00D102
Contextual Info: A I I i ” h l'i i l o t i n , n u e •■ S I 1k x X S V C M O S I lash I IP KO M \ S 2 > 1 0 4 0 S I ?. Kx <S CMOS I'ldsli I I FROM Preliminary information Features • Low pow er consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t

29F040-70

Abstract: TMS29F040 TMS29LF040 TMS29VF040 "NOR Flash" 1996 protect
Contextual Info: TMS29F040 524ā288 BY 8ĆBIT FLASH MEMORY SMJS820C − APRIL 1996 − REVISED JUNE 1998 D Single Power Supply: 5 V ± 10% D D D D D D D A12 A15 A16 A18 VCC W A17 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 3 2 1 32 31 30 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21

Contextual Info: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current

Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

29VF040

Abstract: TMS29F040 29VF04 SMJS820B
Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SM JS820B - AP R IL 1996 - REVISED N O VEM BER 1997 • • • • Single Power Supply 5 V ± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040